Improvement of threshold voltage deviation in damascene metal gate transistors

Yagishita, Akira; Saito, Tomohiro; Nakajima, K.; Inumiya, Seiji; Matsuo, K.; Shibata, Tadashi; Tsunashima, Y.; Suguro, K.; Arikado, T.

doi:10.1109/16.936569

Cited by 75 publications

(31 citation statements)

References 11 publications

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“…Specifically, device performance and reliability can be seriously degraded by the intolerably high direct-tunneling leakage current, increased gate resistance, worsened polysilicon gate depletion, and boron penetration [1], [2]. To alleviate these problems, a high dielectric constant (high-) gate insulator and metal gate have been proposed to meet the stringent performance requirement [3], [4]. Various high-dielectric materials, such as Al O , Ta O , HfO , and ZrO , have been extensively studied [4]- [8].…”

Section: Introductionmentioning

confidence: 99%

<tex>$hbox HfO_2$</tex>MIS Capacitor with Copper Gate Electrode

Perng

Chien

Chen

et al. 2004

IEEE Electron Device Lett.

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Metal-insulator-semiconductor capacitors were fabricated using atomic vapor deposition HfO 2 dielectric with sputtered copper (Cu) and aluminum (Al) gate electrodes. The counterparts with SiO 2 dielectric were also fabricated for comparison. Bias-temperature stress and charge-to-breakdown ( BD ) test were conducted to examine the stability and reliability of these capacitors. In contrast with the high Cu drift rate in an SiO 2 dielectric, Cu in contact with HfO 2 seems to be very stable. The HfO 2 capacitors with a Cu-gate also depict higher capacitance without showing any reliability degradation, compared to the Al-gate counterparts. These results indicate that HfO 2 with its considerably high density of 9.68 g/cm 3 is acting as a good barrier to Cu diffusion, and it thus appears feasible to integrate Cu metal with the post-gate-dielectric ultralarge-scale integration manufacturing processes.

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Section: Introductionmentioning

confidence: 99%

<tex>$hbox HfO_2$</tex>MIS Capacitor with Copper Gate Electrode

Perng

Chien

Chen

et al. 2004

IEEE Electron Device Lett.

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“…It is reported that a TiN film deposited by sputtering is composed of (100) oriented grains with work function of 4.6 eV and (111) oriented grains of 4.4 eV. 24 The grain to grain difference of the work function in the gate electrode is considered to cause V t fluctuation in the TiN MG FinFETs. 5 On the other hand, the amorphous TaSiN MG does not have such a granular effect.…”

mentioning

confidence: 99%

Suppression of threshold voltage variability of double-gate fin field-effect transistors using amorphous metal gate with uniform work function

Matsukawa

Liu

Mizubayashi

et al. 2013

Applied Physics Letters

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Articles you may be interested inStrain induced changes in the gate leakage current of n-channel metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 110, 014511 (2011); 10.1063/1.3603023 Bulk and interface trap generation under negative bias temperature instability stress of p-channel metal-oxidesemiconductor field-effect transistors with nitrogen and silicon incorporated HfO 2 gate dielectrics Appl. Phys. Lett. 98, 063504 (2011); 10.1063/1.3541879 Work function tuning of n -channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate Appl. Phys. Lett. 89, 233520 (2006); 10.1063/1.2402943 Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxidesemiconductor field-effect transistors Appl. Phys. Lett. 87, 073506 (2005); 10.1063/1.1947901Polycrystalline silicon/metal stacked gate for threshold voltage control in metal-oxide-semiconductor field-effect transistors Appl.

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“…In order to verify the validity of the RGG concept in estimating WFV, TiN metal gates with two different gate areas (i.e., 146.7 and 28.7 nm 2 ), and two average grain sizes (i.e., 22 and 4.3 nm), but the same value of RGG (herein, RGG = 0.15), are generated using experimental data, such as the grain orientations, their corresponding work function and probability values [29,30], and average grain sizes [17]. Based on the Rayleigh distribution, the grains fill the gate area, and therefore, all of the devices cannot have the identical number of grains in their gate areas.…”

Section: Ratio Of Average Grain Size To Gate Area (Rgg)mentioning

confidence: 99%

Work Function Variation (WFV)

Shin

2016

Variation-Aware Advanced CMOS Devices and SRAM

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Improvement of threshold voltage deviation in damascene metal gate transistors

Cited by 75 publications

References 11 publications

<tex>$hbox HfO_2$</tex>MIS Capacitor with Copper Gate Electrode

<tex>$hbox HfO_2$</tex>MIS Capacitor with Copper Gate Electrode

Suppression of threshold voltage variability of double-gate fin field-effect transistors using amorphous metal gate with uniform work function

Work Function Variation (WFV)

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Improvement of threshold voltage deviation in damascene metal gate transistors

Cited by 75 publications

References 11 publications

&lt;tex&gt;$hbox HfO_2$&lt;/tex&gt;MIS Capacitor with Copper Gate Electrode

&lt;tex&gt;$hbox HfO_2$&lt;/tex&gt;MIS Capacitor with Copper Gate Electrode

Suppression of threshold voltage variability of double-gate fin field-effect transistors using amorphous metal gate with uniform work function

Work Function Variation (WFV)

Contact Info

Product

Resources

About

<tex>$hbox HfO_2$</tex>MIS Capacitor with Copper Gate Electrode

<tex>$hbox HfO_2$</tex>MIS Capacitor with Copper Gate Electrode