Improvement of the quality of a-SiGe:H films

Sadamoto, Mitsuru; Saitoh, K.; Ishiguro, N.; Yanagawa, N.; Tanaka, Hirofumi; Fukuda, Susumu; Ashida, Y.; Fukuda, Nobuhiro

doi:10.1016/0022-3093(96)00055-5

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Peak Identification1

Introduction1

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1997

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Cited by 5 publications

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“…It is thought to be either a 2 -X 2 II or a 2 r -X 2 II transition. Others [26] have reported using 305nm for GeH, however this is wrong. The 305nm peak is another Ge peak, as found in [20].…”

Section: Peak Identificationmentioning

confidence: 98%

Parameter measurements of a Germane Electron Cyclotron Resonance plasma

deFreese¹

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Section: Peak Identificationmentioning

confidence: 98%

Parameter measurements of a Germane Electron Cyclotron Resonance plasma

deFreese¹

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“…The hydrogen dilution method was quite successful in improving electronic properties at a given optical gap. Some results from hydrogen dilution of process gases are given in [14,16,17,[22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Properties of a-(Si,Ge) films and devices deposited at high growth rates

Bezboruah¹

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In this thesis, we study the properties of amorphous silicon germanium thin films and devices deposited at high growth rates. The effect on the optical and electrical properties of amorphous silicon germanium samples is reported. The films and devices are prepared by ECR-CVD from silane and germane feed gases. Helium plasma is used to obtain faster growth rates of the films. The report records the thin films quality in terms of the optical gaps-E04 and Tauc gaps, photo and dark conductivities, sub-gap absorptions and Urbach energies, and activation energies. Based on these observations, good quality p-in solar cells have been fabricated. Undoped amorphous silicon germanium films were deposited on 7059 coming glass with growth rates of 4.5-5 A/sec. The microwave power was at 150W and the silane flow was at 3sccm. The effect of the substrate temperature, chamber pressures and germane flow were studied. We used the optimum deposition parameters obtained from the growth of films for the p-in devices. We varied the graded ppm boron doping of the i-layer, and the deposition times, and hence the thicknesses of the SiC buffer layer between the p and ilayers. We report good device characteristics with open-circuit voltage of 0.69 V , fill factor of 67% ,and good QE properties for Si Ge devices with a Tauc gap of 1.6 e V .

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Growth of hydrogenated amorphous silicon and its alloys

Collins

Fujiwara

1997

Current Opinion in Solid State and Materials Science

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Improvement of the quality of a-SiGe:H films

Cited by 5 publications

References 2 publications

Parameter measurements of a Germane Electron Cyclotron Resonance plasma

Parameter measurements of a Germane Electron Cyclotron Resonance plasma

Properties of a-(Si,Ge) films and devices deposited at high growth rates

Growth of hydrogenated amorphous silicon and its alloys

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