Abstract:In recent years, DRAM technology node has shrunk below to 40nm HP (Half Pitch) patterning with significant progresses of hyper NA (Numerical Aperture) immersion lithography system and process development. Especially, the development of DPT (Double Patterning Technology) and SPT (Spacer Patterning Technology) can extend the resolution limit of lithography to sub 30nm HP patterning. However it is also necessary to improve the tighter overlay control for developing the sub 40nm DRAM because of small device overla… Show more
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