Improvement of the hole mobility of SnO epitaxial films grown by pulsed laser deposition

Minohara, Makoto; Kikuchi, Naoto; Yoshida, Yoshiyuki; Kumigashira, Hiroshi; Aiura, Y.

doi:10.1039/c9tc01297d

Cited by 29 publications

(56 citation statements)

References 27 publications

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“…Fig. 9 shows the X-ray absorption spectroscopy (XAS) spectra of the SnO film grown on an yttriumdoped ZrO 2 (YSZ) (001) substrate, reproduced from those reported previously (McLeod et al, 2012;Quackenbush et al, 2013;Sharma et al, 2016;Minohara et al, 2019). To investigate the compositional homogeneity, the SX was set to be the photon energy corresponding to the characteristic/intense absorbed peak structure near the Sn M-edge (487.6 eV) and O K-edge (534.2 eV), and the spatial distribution was measured.…”

Section: Composition Evaluation Of Sno Filmmentioning

confidence: 74%

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Development of a high-precision XYZ translator and estimation of beam profile of the vacuum ultraviolet and soft X-ray undulator beamline BL-13B at the Photon Factory

Aiura

Ozawa

Mase

et al. 2020

J Synchrotron Radiat

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A high-precision XYZ translator was developed for the microanalysis of electronic structures and chemical compositions on material surfaces by electron spectroscopy techniques, such as photoelectron spectroscopy and absorption spectroscopy, utilizing the vacuum ultraviolet and soft X-ray synchrotron radiation at an undulator beamline BL-13B at the Photon Factory. Using the high-precision translator, the profile and size of the undulator beam were estimated. They were found to strongly depend on the photon energy but were less affected by the polarization direction. To demonstrate the microscopic measurement capability of an experimental apparatus incorporating a high-precision XYZ translator, the homogeneities of an SnO film and a naturally grown anatase TiO2 single crystal were investigated using X-ray absorption and photoemission spectroscopies. The upgraded system can be used for elemental analyses and electronic structure studies at a spatial resolution in the order of the beam size.

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Section: Composition Evaluation Of Sno Filmmentioning

confidence: 74%

“…The ES width and photon energy are set to 30 mm and material for practical devices as a p-type oxide semiconductor. Recently, we improved the hole mobility of an SnO film by modulating the growth thermodynamics and kinetics (Minohara et al, 2019(Minohara et al, , 2020. Fig.…”

Section: Composition Evaluation Of Sno Filmmentioning

confidence: 99%

Development of a high-precision XYZ translator and estimation of beam profile of the vacuum ultraviolet and soft X-ray undulator beamline BL-13B at the Photon Factory

Aiura

Ozawa

Mase

et al. 2020

J Synchrotron Radiat

Self Cite

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“…So far, several approaches including hydrogen annealing, passivation formation, hightemperature deposition have been proposed to reduce subgap defects for SnO. Although the TFT device has not been demonstrated yet, epitaxial SnO films with remarkable high Hall mobility of ∼ 10 cm 2 /Vs with a low hole density of ∼ 10 16 cm −3 have been successfully grown by high-temperature PLD deposition [121]. The achievement brings high expectations to furthermore improve TFT characteristics in the p-channel SnO-TFTs.…”

Section: All-oxide-tft-based Cmos Invertermentioning

confidence: 99%

Recent progress of oxide-TFT-based inverter technology

Nomura

2021

Journal of Information Display

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Oxide semiconductor-based thin-film transistor (oxide-TFT) technology have gained significant attention since the innovation of n-channel oxide-TFT using ZnO and amorphous In-Ga-Zn-O (a-IGZO) channels because of their superior device properties including excellent electrical property such as high TFT mobility over > 10 cm 2 /Vs and the low-cost manufacturability originating from the low-temperature processability. Already, n-channel a-IGZO-TFT is widely employed as a TFT pixel switching backplane for several high-performance active-matrix flat-panel displays, and oxide-TFT technology to date is well acknowledged as the best TFT technology for future device applications in the wide range area of electronics such as sensors, Internet of things (IoT), energy-harvesting, medical/bio-interface device, etc. Therefore, the development of large-scale circuit beyond discrete TFT device level becomes increasingly important and is vital to advance the next stage of oxide-TFT technology. In particular, developing oxide-TFT-based inverter device technology is the key for developing several digital and analog circuits. In this paper, the recent progress and challenges in oxide-TFT-based inverter technology, including unipolar NMOS, PMOS, CMOS, and CMOS-like inverters using ambipolar oxide-TFT, are reviewed.

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“…Analyzing the temperature dependence of transport properties allows us to conclude on transport mechanisms, acceptor ionization energy, and scattering mechanism. To date, the limited number of reports on temperature-dependent thin-film transistor characteristics [59][60][61] and temperaturedependent Hall measurements 9,10,17,58 of unintentionallydoped SnO show a variety of different transport characteristics: The observation of decreasing hole mobility with decreasing temperature has been typically associated with hopping conductivity or percolative transport, 10,[59][60][61] whereas an increasing hole mobility has been associated with phonon-scattering limited band transport by free holes. 11,61 Fig.…”

Section: B Temperature-dependent Transport Scattering Mechansim and A...mentioning

confidence: 99%

Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass

Budde

Mazzolini

Feldl

et al. 2020

Phys. Rev. Materials

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Transparent conducting or semiconducting oxides are an important class of materials for (transparent) optoelectronic applications and -by virtue of their wide band gaps -for power electronics. While most of these oxides can be doped n-type only with room-temperature electron mobilities on the order of 100 cm 2 /Vs, p-type oxides are needed for the realization of pn-junction devices but typically suffer from exessively low (< <1 cm 2 /Vs) hole mobilities. Tin monoxide (SnO) is one of the few p-type oxides with a higher hole mobility yet is currently lacking a well-established understanding of its hole transport properties. Moreover, growth of SnO is complicated by its metastability with respect to SnO 2 and Sn, requiring epitaxy for the realization of single crystalline material typically required for high-end applications. Here, we give a comprehensive account on the epitaxial growth of SnO, its (meta)stability, and its thermoelectric transport properties in the context of the present literature. Textured and single-crystalline, unintentionally-doped p-type SnO(001) films are grown on Al 2 O 3 (00.1) and Y 2 O 3 -stabilized ZrO 2 (001), respectively, by plasma-assisted molecular beam epitaxy and the epitaxial relations are determined. The metastability of this semiconducting oxide is addressed theoretically through an equilibrium phase diagram. Experimentally, the related SnO growth window is rapidly determined by an in-situ growth kinetics study as function of Sn-to-O-plasma flux ratio and growth temperature. The presence of secondary Sn and SnO x (1 < x ≤ 2) phases is comprehensively studied by x-ray diffraction, Raman spectroscopy, scanning electron microscopy, and x-ray photoelectron spectroscopy, indicating the presence of Sn 3 O 4 or Sn as major secondary phases, as well as a fully oxidized SnO 2 film surface. The hole transport properties, Seebeck coefficient, and density-of-states effective mass are determined and critically discussed in the context of the present literature on SnO, considering its strongly anisotropic effective hole mass: Hall measurements of our films reveal room temperature hole concentrations and mobilities in the range of 2•10 18 to 10 19 cm −3 and 1.0 to 6.0 cm 2 /Vs, respectively, with consistently higher mobility in the single-crystalline films. Temperature-dependent Hall measurements of the single-crystalline films closest to stoichiometric, phase-pure SnO indicate non-degenerate band transport by free holes (rather than hopping transport) with dominant polar optical phonon scattering at room temperature. Taking into account the impact of acceptor band formation and the apparent activation of the hole concentration by 40-53 meV, we assign tin vacancies rather than their complexes with hydrogen as the unintentional acceptor. The room temperature Seebeck coefficient in our films confirms p-type conductivity by band transport. Its combination with the hole concentration allows us to experimentally estimate the density of states effective hole mass to be in the range of 1 to 8 times ...

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Improvement of the hole mobility of SnO epitaxial films grown by pulsed laser deposition

Abstract: Stannous oxide, SnO, is a promising material for practical applications as a p-type transparent oxide semiconductor. The hole mobility of SnO epitaxial films grown by pulsed laser deposition can be improved by reducing the growth temperature.

Cited by 29 publications

References 27 publications

Development of a high-precision XYZ translator and estimation of beam profile of the vacuum ultraviolet and soft X-ray undulator beamline BL-13B at the Photon Factory

Development of a high-precision XYZ translator and estimation of beam profile of the vacuum ultraviolet and soft X-ray undulator beamline BL-13B at the Photon Factory

Recent progress of oxide-TFT-based inverter technology

Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass

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