Improvement of the electrical properties of Se3Te1 thin films by In additions

Aly, K.A.; Elnaeim, A.M. Abd; Afify, N.; Abousehly, A. M.

doi:10.1016/j.jnoncrysol.2012.06.029

Cited by 28 publications

(7 citation statements)

References 38 publications

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“…As the real and imaginary parts of the dielectric constant are related to refractive index and absorption coefficient (a), respectively, an increase in (a) value indicates that the absorption edge shifts toward the longer wavelength, i.e., red shift with increasing tin content is signifying an increase in density of localized states in forbidden gap. The third-order nonlinear optical susceptibility (v (3) ) for any material is an important parameter which decides the use of that material in nonlinear optical devices. Therefore, it is an important parameter in optical measurements.…”

Section: Dispersion Energy Parametersmentioning

confidence: 99%

“…Chalcogenide glasses have received a special attention due to their wide range of applications in various solid-state devices such as switching, memory, image converters and optical mass memories [1][2][3][4][5][6][7]. The common feature of these glasses is the presence of localized states in the mobility gap due to the absence of long-range order as well as various inherent defects.…”

Section: Introductionmentioning

confidence: 99%

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On the study of the optical constants for different compositions of Sn x (GeSe)100−x thin films in terms of the electronic polarizability, electronegativity and bulk modulus

Aly

2015

Appl. Phys. A

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Different compositions of amorphous Sn x (GeSe) 100-x (0.0 B x B 0.12 at.%) thin films were deposited onto glass substrates by the thermal evaporation technique. The optical constants (n and k) and film thicknesses of Sn x (GeSe) 100-x thin films were obtained based only on their measured reflectance spectra in the wavelength range 300-2500 nm. It was found that the refractive index (n) increased while the optical energy gap (E g ) decreased with increasing tin content. The possible optical transition in these films obeys the allowed non-direct transitions. The obtained results were discussed in terms of the electronic polarizability (a e ). The dispersion parameters [the single-oscillator energy (E 0 ) and the dispersion energy (E d )] were obtained by fitting the refractive index according to Wemple and Di-Domenico model. The third-order nonlinear optical susceptibility v (3) was calculated with the help of E 0 and E d values. The obtained values of v (3) are too high, indicating that the films under study are interesting materials for nonlinear optical devices.

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Section: Dispersion Energy Parametersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

On the study of the optical constants for different compositions of Sn x (GeSe)100−x thin films in terms of the electronic polarizability, electronegativity and bulk modulus

Aly

2015

Appl. Phys. A

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“…Based on the ρ-values the molar volume V m was calculated according to their relation (V m = M/ρ), where M is the molecular weight of the glass. Amorphous films were deposited onto cleaned glass substrates by thermal evaporation of bulk ingots of these alloys [21,22]. The chemical compositions of the deposited films were measured using energy dispersive X-ray spectroscopy (Link analytical EDS).…”

Section: Methodsmentioning

confidence: 99%

Linear and non-linear optical properties of amorphous Se and M5Se95 (M = Ge, Ga and Zn) films

et al. 2016

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The variations in structure and optical properties of amorphous a-Se and aM 5 Se 95 (M = Ge, Ga and Zn) films have been studied based on FTIR and optical measurements. FTIR transmittance spectra for a-Se and aM 5 Se 95 (M = Ge, Ga and Zn) glasses were measured as a function of wavenumber. The addition of Ge, Ga and Zn increases the vibrational frequency of the a-Se main band. The absorption edge of Ge 5 Se 95 shifted towards long side of the wavelength in comparison with that of a-Se film. This shift increases gradually in the case of Ga 5 Se 95 and Zn 5 Se 95 films. So, the optical bandgap of M 5 Se 95 films was decreased, but the index of refraction was increased. The first and third order of electric susceptibility (χ (1) and χ (3)) and non-linear index of refraction (n 2) were increased by adding Ge, Ga and Zn into a-Se.

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“…This strong absorption band can be attributed by band-to-band transitions which correspond to the 2p(O) to 5s(Sn) states [20,21]. The relation between the absorption coefficient (α) and the incident photon energy (hν) can be determined by using Tauc's relationship in the high absorption region of semiconductor, as follows [16,17,24]:…”

Section: Optical Energy Gap Determinationmentioning

confidence: 99%

“…n is the power factor of the transition mode. The values of (n) for direct allowed, indirect allowed, direct forbidden and indirect forbidden transitions are n = 1/2, 2, 3/2 and 3, respectively [16,17,24]. In this case, BaSnO 3 is a semiconductor with an indirect the band gap and suitable with n = 2.…”

Section: Optical Energy Gap Determinationmentioning

confidence: 99%

Investigation of Optical Properties on BaSnO<sub>3</sub> Materials

Anh¹,

Thanh²

2017

ujpa

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Perovskite BaSnO 3 materials were synthesized under hydrothermal condition followed heat treatment at variable temperature 423-673 K. Phase structure and morphology and optical properties were characterized. Result showed band gap about 3.31 eV and highly optical transparency in the visible spectral region and average particles size 40-45 nm. Thermal annealing process has affected on phase structure and luminescence in BaSnO 3 material.

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Improvement of the electrical properties of Se3Te1 thin films by In additions

Cited by 28 publications

References 38 publications

On the study of the optical constants for different compositions of Sn x (GeSe)100−x thin films in terms of the electronic polarizability, electronegativity and bulk modulus

On the study of the optical constants for different compositions of Sn x (GeSe)100−x thin films in terms of the electronic polarizability, electronegativity and bulk modulus

Linear and non-linear optical properties of amorphous Se and M5Se95 (M = Ge, Ga and Zn) films

Investigation of Optical Properties on BaSnO<sub>3</sub> Materials

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