“…Previously, we proposed a post fabrication SRAM selfimprovement technique, which automatically improves the SRAM cell stability by simply applying a high stress voltage to the power supply terminal. [12][13][14][15] Bias temperature instability (BTI) stress selectively not only weakens the stronger one [12][13][14] but strengthens the weaker one 15,16) of pair transistors in each SRAM cell, resulting in the stability improvement of unstable cells in read 13,14) and retention 13,15) operations. However, one of the demerits of this technique is that stable cells will also be affected by the stress, and their stability can be worsened.…”