Improvement of Stability and Performance of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by Zinc-Tin-Oxide Spray Coating

Lee, Hwayeong; Lee, Suhui; Kim, Youngoo; Siddik, Abu Bakar; Billah, Mohammad Masum; Lee, Jiseob; Jang, Jin

doi:10.1109/led.2020.3018750

Cited by 23 publications

(12 citation statements)

References 20 publications

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“…In biological buffer solutions, the charged protein molecules would be surrounded by oppositely charged ions due to electrostatic interaction, thus decreasing the effective charge of proteins. [ 28–41 ] This effect is known as Debye screening, and due to the Debye screening effect, the effective electrical field of FET biosensors could only be controlled within a distance called the Debye length (λ D ): [ 42,43 ]

{\lambda _{\rm{D}}} = \sqrt {\frac{{\varepsilon {k_{\rm{B}}}T}}{{2{N_{\rm{A}}}{q^2}I}}}

where ε is the dielectric constant of electrolyte. k B , T , and N A represent the Boltzmann's constant, temperature, and Avogadro's number, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…In biological buffer solutions, the charged protein molecules would be surrounded by oppositely charged ions due to electrostatic interaction, thus decreasing the effective charge of proteins. [28][29][30][31][32][33][34][35][36][37][38][39][40][41] This effect is known as Debye screening, and due to the Debye screening effect, the effective electrical field of FET biosensors could only be controlled within a distance called the Debye length (λ D ): [42,43]…”

Section: Assay Validationmentioning

confidence: 99%

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Integrated Urinalysis Devices Based on Interface‐Engineered Field‐Effect Transistor Biosensors Incorporated With Electronic Circuits

et al. 2022

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BC diagnosis relies on the insertion of an optical endoscope into the bladder cavity through urethra to image the suspected lesions. [7,8] This process is highly invasive and would cause urethra and bladder injury, resulting in hematuria and even urinary bacterial infection within a few days after examinations. [9] Critically, cystoscopy diagnosis is plagued with the inherent bladder tumor heterogeneity, and therefore, limits the accuracy of early BC diagnosis. [10] Recently, noninvasive liquid biopsy emerges as an alternative to address the bottleneck of spatiotemporal tumor heterogeneity and to obtain disease-relevant molecular information for clinical cancer diagnosis and cancer status monitoring. [11][12][13][14][15][16][17][18][19][20] Bladder is a urine storage organ that has been recognized as the metabolic microenvironment for bladder tumor cells, and its carcinogenesis and progression could make a pivotal impact on urine. [21] In this regard, the development of a urine biopsy provides a powerful strategy toward noninvasive early diagnosis and prognosis of BC. Clinically, urinalysis has been routinely utilized to detect abnormal metabolic biomarkers in urine for the assessment of health status and preliminary screening of diseases. [22][23][24][25] However, the physiologically relevant biomarkers detected by routine urinalysis are generally limited to high concentration targets over the micromolar level. On the other hand, the concentration Urinalysis is attractive in non-invasive early diagnosis of bladder cancer compared with clinical gold standard cystoscopy. However, the trace bladder tumor biomarkers in urine and the particularly complex urine environment pose significant challenges for urinalysis. Here, a clinically adoptable urinalysis device that integrates molecular-specificity indium gallium zinc oxide field-effect transistor (IGZO FET) biosensor arrays, a device control panel, and an internet terminal for directly analyzing five bladder-tumor-associated proteins in clinical urine samples, is reported for bladder cancer diagnosis and classification. The IGZO FET biosensors with engineered sensing interfaces provide high sensitivity and selectivity for identification of trace proteins in the complex urine environment. Integrating with a machine-learning algorithm, this device can identify bladder cancer with an accuracy of 95.0% in a cohort of 197 patients and 75 non-bladder cancer individuals, distinguishing cancer stages with an overall accuracy of 90.0% and assessing bladder cancer recurrence after surgical treatment. The non-invasive urinalysis device defines a robust technology for remote healthcare and personalized medicine.

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{\lambda _{\rm{D}}} = \sqrt {\frac{{\varepsilon {k_{\rm{B}}}T}}{{2{N_{\rm{A}}}{q^2}I}}}

where ε is the dielectric constant of electrolyte. k B , T , and N A represent the Boltzmann's constant, temperature, and Avogadro's number, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…In biological buffer solutions, the charged protein molecules would be surrounded by oppositely charged ions due to electrostatic interaction, thus decreasing the effective charge of proteins. [28][29][30][31][32][33][34][35][36][37][38][39][40][41] This effect is known as Debye screening, and due to the Debye screening effect, the effective electrical field of FET biosensors could only be controlled within a distance called the Debye length (λ D ): [42,43]…”

Section: Assay Validationmentioning

confidence: 99%

Integrated Urinalysis Devices Based on Interface‐Engineered Field‐Effect Transistor Biosensors Incorporated With Electronic Circuits

et al. 2022

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“…The summary of the TFT performance of multistack heterojunction oxide TFTs with high field-effect mobility reported in the literature is shown in Table . ,− Compared to the reported TFT performance, − ,− our triple-stack heterojunction TFT shows higher field-effect mobility, lower SS, higher current on/off ratio, positive V TH , and excellent stability.…”

Section: Resultsmentioning

confidence: 86%

Triple-Stack ZnO/AlZnO/YZnO Heterojunction Oxide Thin-Film Transistors by Spray Pyrolysis for High Mobility and Excellent Stability

Saha

Billah

Jang

2021

ACS Appl. Mater. Interfaces

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We demonstrate a high mobility, triple-stack ZnO/AlZnO/YZnO heterojunction thin-film transistor (TFT) using the semiconductors deposited by spray pyrolysis at 350 °C on an Al2O3 gate insulator. A thin layer (5 nm) of AlZnO on the top of ZnO used as an active layer of an inverted coplanar-structured TFT increases the field-effect mobility (μFE) from 42.56 to 82.7 cm2 V–1 s–1. An additional 5 nm thick YZnO on the top of the ZnO/AlZnO TFT improves the electrical stability by reducing the defects in the bulk ZnO, AlZnO, and at the interface AlO x /ZnO. The ZnO-based materials show a nanocrystalline structure with the grain size less than 20 nm. The triple-stack oxide TFT shows a μFE of 71.3 cm2 V–1 s–1 with a threshold voltage (V TH) of 2.85 V. The hysteresis voltage for pristine ZnO, ZnO/AlZnO, and ZnO/AlZnO/YZnO TFTs is 0.52, 0.24, and 0.02 V, respectively. The ZnO/AlZnO/YZnO TFT shows a negligible V TH shift under temperature bias stress for 3600 s at 60 °C and excellent environmental stability over a few months, which is due to the presence of stronger Y–O and Al–O bonds in the back channel. The threshold voltage shift under positive bias temperature stress for pristine ZnO, ZnO/AlZnO, and ZnO/AlZnO/YZnO TFTs is 0.78, 0.40, and 0.15 V, respectively. Compared to the pristine ZnO TFT, the ZnO/AlZnO/YZnO TFT shows better environmental and bias stabilities with improved hysteresis. The experimental data of ZnO/AlZnO and ZnO/AlZnO/YZnO TFTs can be fitted by technology computer-aided design (TCAD) simulation using the density of states model of the oxide semiconductors. From the TCAD simulation, it is found that a 2D-like electron gas is formed at the narrow AlZnO layer between ZnO and YZnO.

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“…Indium-tin oxide (ITO) and aluminum (Al) were employed as top and bottom electrodes, respectively. Through literature surveys, the band alignments of the DSJ diode were estimated, as shown in Figure b. − The Fermi-level difference between the PEDOT layer and the n-type semiconductors creates two distinctive Schottky junctions; their built-in potentials were 0.45 eV ( E SB1 , Si/PEDOT junction) and 0.5 eV ( E SB2 , IGZO/PEDOT junction), respectively. The junction between IGZO and ITO has a much lower barrier height (0.1–0.15 eV) than the Schottky junctions, which has little effect on the optoelectrical properties of the device.…”

Section: Resultsmentioning

confidence: 99%

“…The permittivity of free space, ε 0 , and the Planck constant, h , are also related to the C G equation. Below 370 nm wavelength light, of which the single-photon energy matches with the band gap of IGZO (∼3.3 eV), − the photo-induced charge generation dominantly occurred in the IGZO layer. In contrast, the C G values of the ITO/IGZO/PEDOT/MoO 3 layers under visible light (wavelength > 370 nm) were negligible, while its intensity was suddenly amplified near the Si/PEDOT boundary.…”

Section: Resultsmentioning

confidence: 99%

Bias-Switchable Photodetector from Broad-Band to UV-Selective Detection Mode Leveraging Nanolayered Dual-Schottky Junction

Kim

Rothschild

Lee

et al. 2022

ACS Appl. Nano Mater.

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The limitless potential of ultraviolet (UV) information is fueling the development of photodetecting technology beyond color image acquisitions such as air pollution monitoring, oil spill detection, and missile tracking systems. Ideal detectors for such applications need to separately perceive UV and visible lights to maximize their functional versatility. However, traditional device structures (e.g., photodiodes and photoconductors) inevitably require expensive filters or supplementary devices to discriminate the light sources. This study aims to develop photodetectors that provide dual functionalities in a single-unit device without any filters. To this end, we propose a device configuration based on two Schottky diodes stacked antiparallel. The dual-Schottky junctions (DSJs) uniquely arrange the band structure within the device to selectively create photocurrent from the targeted wavelengths (UV/visible) of light and block the rest (visible/UV) by adjusting the bias polarity. In addition, we further demonstrate dual-spectral detection in real time by mapping UV and broad-band (UV + visible) light images in a single frame without the aid of supplementary filters or equipment. The filter-free system, capable of UV/visible discrimination, would pave the way for developing a universal and multimodal next-generation photodetector with enhanced detection rates.

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Improvement of Stability and Performance of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by Zinc-Tin-Oxide Spray Coating

Cited by 23 publications

References 20 publications

Integrated Urinalysis Devices Based on Interface‐Engineered Field‐Effect Transistor Biosensors Incorporated With Electronic Circuits

Integrated Urinalysis Devices Based on Interface‐Engineered Field‐Effect Transistor Biosensors Incorporated With Electronic Circuits

Triple-Stack ZnO/AlZnO/YZnO Heterojunction Oxide Thin-Film Transistors by Spray Pyrolysis for High Mobility and Excellent Stability

Bias-Switchable Photodetector from Broad-Band to UV-Selective Detection Mode Leveraging Nanolayered Dual-Schottky Junction

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