Abstract:The objective of this paper is to demonstrate how to improve the read stability of the SRAM cell using the read assist technique. SRAM cell stability is the primary concern for the present and future technologies due to process variations like Vt and Vdd scaling, etc. So it requires additional circuit techniques such as write and read to assist to improve the stability of SRAM memories. To accomplish the non-destructive read operation, we need to either weaken the pass transistor or strengthen the pull-up tran… Show more
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