Improvement of Sidewall Roughness of Submicron SOI Waveguides by Hydrogen Plasma and Annealing

Bellegarde, Cyril; Pargon, E.; Sciancalepore, Corrado; Petit-Etienne, C.; Hugues, Vincent; Robin-Brosse, Daniel; Hartmann, Jean‐Michel; Lyan, Philippe

doi:10.1109/ipcon.2018.8527221

Cited by 3 publications

(3 citation statements)

References 15 publications

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“…The deep RIE process with a slow etching rate of 18 nm/min was performed aiming to smooth the side walls. In addition, hydrogen annealing was reported to reduce the side wall roughness [43].…”

Section: Resultsmentioning

confidence: 99%

Enhancement of Refractive Index Sensitivity Using Small Footprint S-Shaped Double-Spiral Resonators for Biosensing

Igarashi

Abe

Kuroiwa³

et al. 2023

Sensors

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We demonstrate an S-shaped double-spiral microresonator (DSR) for detecting small volumes of analytes, such as liquids or gases, penetrating a microfluidic channel. Optical-ring resonators have been applied as label-free and high-sensitivity biosensors by using an evanescent field for sensing the refractive index of analytes. Enlarging the ring resonator size is a solution for amplifying the interactions between the evanescent field and biomolecules to obtain a higher refractive index sensitivity of the attached analytes. However, it requires a large platform of a hundred square millimeters, and 99% of the cavity area would not involve evanescent field sensing. In this report, we demonstrate the novel design of a Si-based S-shaped double-spiral resonator on a silicon-on-insulator substrate for which the cavity size was 41.6 µm × 88.4 µm. The proposed resonator footprint was reduced by 680 times compared to a microring resonator with the same cavity area. The fabricated resonator exposed more sensitive optical characteristics for refractive index biosensing thanks to the enhanced contact interface by a long cavity length of DSR structures. High quality factors of 1.8 × 104 were demonstrated for 1.2 mm length DSR structures, which were more than two times higher than the quality factors of microring resonators. A bulk sensitivity of 1410 nm/RIU was calculated for detecting 1 µL IPA solutions inside a 200 µm wide microchannel by using the DSR cavity, which had more than a 10-fold higher sensitivity than the sensitivity of the microring resonators. A DSR device was also used for the detection of 100 ppm acetone gas inside a closed bottle.

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Section: Resultsmentioning

confidence: 99%

Enhancement of Refractive Index Sensitivity Using Small Footprint S-Shaped Double-Spiral Resonators for Biosensing

Igarashi

Abe

Kuroiwa³

et al. 2023

Sensors

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“…a, The evolution of fully integrated photonic platforms: pure III-V platform relies on multiple epitaxial regrowths to combine active and passives structures; heterogeneous III-V on SOI requires two bonding procedures, the 'smart-cut' method to produce an integrated Si film and III-V bonding to transfer III-V epitaxy layers from native substrate onto SOI; the heterogeneous III-V on SiN platform needs only SiN direct deposition to integrate SiN film, and only one wafer bonding process to add the III-V layer. b, The spectral coverage of fully integrated PICs: boxes represent the transparency window of passive platforms on the basis of different materials (InP 52 , GaAs 53 , Si 54,55 , SiN 22,24,56 ) that can be used for fully integrated PICs, points represent the current state-of-the-art loss on these passive waveguides and wafer marker sizes represent the current maximum wafer scale in foundries. The icons on the upper side represent applications of fully integrated PICs over the spectrum map.…”

Section: Heterogeneously Integrated Iii-v On Sin Photonics Platformmentioning

confidence: 99%

Extending the spectrum of fully integrated photonics to submicrometre wavelengths

Tran

Zhang

Morin

et al. 2022

Nature

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Integrated photonics has profoundly affected a wide range of technologies underpinning modern society1–4. The ability to fabricate a complete optical system on a chip offers unrivalled scalability, weight, cost and power efficiency5,6. Over the last decade, the progression from pure III–V materials platforms to silicon photonics has significantly broadened the scope of integrated photonics, by combining integrated lasers with the high-volume, advanced fabrication capabilities of the commercial electronics industry7,8. Yet, despite remarkable manufacturing advantages, reliance on silicon-based waveguides currently limits the spectral window available to photonic integrated circuits (PICs). Here, we present a new generation of integrated photonics by directly uniting III–V materials with silicon nitride waveguides on Si wafers. Using this technology, we present a fully integrated PIC at photon energies greater than the bandgap of silicon, demonstrating essential photonic building blocks, including lasers, amplifiers, photodetectors, modulators and passives, all operating at submicrometre wavelengths. Using this platform, we achieve unprecedented coherence and tunability in an integrated laser at short wavelength. Furthermore, by making use of this higher photon energy, we demonstrate superb high-temperature performance and kHz-level fundamental linewidths at elevated temperatures. Given the many potential applications at short wavelengths, the success of this integration strategy unlocks a broad range of new integrated photonics applications.

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“…Typical propagation losses of silicon nanowaveguides are around 2 dB/cm, which is prohibitive for scaling quantum applications. Thanks to developments in fabrication technology such as oxidization [109], [110], etchless waveguide fabrication [111], Hydrogen thermal annealing [112], and shallow waveguides [113], [60], propagation loss has been significantly reduced, with a record-low loss of 2.7 dB/m (Fig. 1f) [60].…”

Section: A Passive Componentsmentioning

confidence: 99%

Advances in silicon quantum photonics

Adcock,

Bao,

Chi

et al. 2022

Preprint

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Quantum technology is poised to enable a step change in human capability for computing, communications and sensing. Photons are indispensable as carriers of quantum information-they travel at the fastest possible speed and readily protected from decoherence. However, the system requires thousands of near-transparent components with ultra-low-latency control. For quantum technology to be implemented, a new paradigm photonic system is required: one with in-built coherence, stability, the ability to define arbitrary circuits, and a path to manufacturability. Silicon photonics has unparalleled density and component performance, which, with CMOS compatible fabrication, place it in a strong position for a scalable quantum photonics platform. This paper is a progress report on silicon quantum photonics, focused on developments in the past five years. We provide an introduction on silicon quantum photonic component and the challenges in the field, summarise the current state-of-the-art and identify outstanding technical challenges, as well as promising avenues of future research. We also resolve a conflict in the definition of Hong-Ou-Mandel interference visibility in integrated quantum photonic experiments, needed for fair comparison of photon quality across different platforms. Our aim is the development of scalability on the platform, to which end we point the way to ever-closer integration, toward silicon quantum photonic systems-on-a-chip.

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Improvement of Sidewall Roughness of Submicron SOI Waveguides by Hydrogen Plasma and Annealing

Cited by 3 publications

References 15 publications

Enhancement of Refractive Index Sensitivity Using Small Footprint S-Shaped Double-Spiral Resonators for Biosensing

Enhancement of Refractive Index Sensitivity Using Small Footprint S-Shaped Double-Spiral Resonators for Biosensing

Extending the spectrum of fully integrated photonics to submicrometre wavelengths

Advances in silicon quantum photonics

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