Improvement of sensing margin and reset switching fail of RRAM

Park, Woo Young; Ju, Wonki; Ko, Young Seok; Kim, Soo Gil; Ha, Tae Jung; Lee, Jae Yeon; Park, Yong Taek; Kim, Kyung Wan; Lee, Jong Chul; Lee, Jong Ho; Moon, Joo Young; Lee, Bo Mi; Gyun, Byung Gu; Lee, Byoung-Ki; Kim, Jin Kook

doi:10.1016/j.sse.2019.02.010

Cited by 6 publications

(6 citation statements)

References 12 publications

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“…Negative-SET occurs after the abrupt RESET process at LRS with high current (green color in Figure 2 a), which limits the number of reversible cycling between LRS and HRS. Negative-SET makes it difficult to set an appropriate RESET stop voltage by making the margin of the RESET voltage smaller [ 37 ]. This phenomenon is coupled with a process in which excessive Ag filaments are formed during the SET process, and the switching fails occur because excessive filaments are formed by parasitic filaments after the RESET process.…”

Section: Resultsmentioning

confidence: 99%

Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer

Choi

Kim

2020

Micromachines

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In this work, the enhanced resistive switching of ZrN-based resistive switching memory is demonstrated by embedding TiO2 layer between Ag top electrode and ZrN switching layer. The Ag/ZrN/n-Si device exhibits unstable resistive switching as a result of the uncontrollable Ag migration. Both unipolar and bipolar resistive switching with high RESET current were observed. Negative-SET behavior in the Ag/ZrN/n-Si device makes set-stuck, causing permanent resistive switching failure. On the other hand, the analogue switching in the Ag/TiO2/ZrN/n-Si device, which could be adopted for the multi-bit data storage applications, is obtained. The gradual switching in Ag/TiO2/ZrN/n-Si device is achieved, possibly due to the suppressed Ag diffusion caused by TiO2 inserting layer. The current–voltage (I–V) switching characteristics of Ag/ZrN/n-Si and Ag/TiO2/ZrN/n-Si devices can be well verified by pulse transient. Finally, we established that the Ag/TiO2/ZrN/n-Si device is suitable for neuromorphic application through a comparison study of conductance update. This paper paves the way for neuromorphic application in nitride-based memristor devices.

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Section: Resultsmentioning

confidence: 99%

Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer

Choi

Kim

2020

Micromachines

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“…Chua proposed the existence of another two-terminal component in the circuit, in addition to the resistor, capacitor, and inductor, which operated on the basis of a relationship among voltage (ν), current (i), magnetic flux (ϕ), and charge (q) [107]. The resistor is used to describe the relationship between ν and i, the capacitor is the connection between ν and q, and the inductor links ϕ and i.…”

Section: Memristormentioning

confidence: 99%

“…With the development of memristor research for about half a century, RRAM devices received considerable attention as the most typical memristor. Apart from research on device performance, recent research was directed toward the study of materials with resistive switching (RS) function, such as binary transition metal oxides (TiO x , AlO x , and NiO x ) [3,[107][108][109][110][111], perovskite compounds (CH 3 NH 3 PbI 3 and CsPbBr 3 ) [54,55,112], ferromagnetic materials [112,113], biological materials [114,115], and graphene-based materials (graphene and GO) [30,116].…”

Section: Memristormentioning

confidence: 99%

“…Stop voltages of the set and reset process are defined as V SET and V RESET . In general, two different switching types are defined as unipolar and bipolar [3,[107][108][109][110][111], as illustrated in Figure 2. The unipolar switching mode is defined by the amplitude of the applied voltage bias, while the bipolar switching depends on the polarity of the applied voltage bias.…”

Section: Rram Device Characteristicsmentioning

confidence: 99%

“…Unipolar (a) and bipolar (b) resistive switching (RS) behavior of RRAM device[3,[107][108][109][110][111].…”

mentioning

confidence: 99%

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Memristive Non-Volatile Memory Based on Graphene Materials

Shen

Zhao

et al. 2020

Micromachines

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Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in the industry of neuromorphic systems and artificial intelligence (AI), due its advantages such as fast operation speed, low power consumption, and high device density. Graphene and related materials (GRMs), especially graphene oxide (GO), acting as active materials for RRAM devices, are considered as a promising alternative to other materials including metal oxides and perovskite materials. Herein, an overview of GRM-based RRAM devices is provided, with discussion about the properties of GRMs, main operation mechanisms for resistive switching (RS) behavior, figure of merit (FoM) summary, and prospect extension of GRM-based RRAM devices. With excellent physical and chemical advantages like intrinsic Young’s modulus (1.0 TPa), good tensile strength (130 GPa), excellent carrier mobility (2.0 × 105 cm2∙V−1∙s−1), and high thermal (5000 Wm−1∙K−1) and superior electrical conductivity (1.0 × 106 S∙m−1), GRMs can act as electrodes and resistive switching media in RRAM devices. In addition, the GRM-based interface between electrode and dielectric can have an effect on atomic diffusion limitation in dielectric and surface effect suppression. Immense amounts of concrete research indicate that GRMs might play a significant role in promoting the large-scale commercialization possibility of RRAM devices.

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Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature

Shen

Zhao

et al. 2020

Solid-State Electronics

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Improvement of sensing margin and reset switching fail of RRAM

Cited by 6 publications

References 12 publications

Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer

Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer

Memristive Non-Volatile Memory Based on Graphene Materials

Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature

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