Improvement of resistive switching property in a noncrystalline and low-resistance La0.7Ca0.3MnO3thin film by using an Ag–Al alloy electrode

Yu, Weidong; Li, Xiaomin; Yang, Rui; Liu, Xinjun; Wang, Qun; Chen, Lidong

doi:10.1088/0022-3727/41/21/215409

Cited by 16 publications

(15 citation statements)

References 22 publications

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“…2,4-30 RS behavior was first reported by Liu et al 2 in a metal=Pr 0.7 Ca 0.3 MnO 3 (PCMO) interface, in which the reversible resistance change can be induced by the application of pulsed voltage to the PCMO sandwiched between the electrodes. Similar RS behavior has also been reported in a wide range of perovskite oxides such as La 0.7 Ca 0.3 MnO 3 (LCMO), [13][14][15][16] La 0.33 Sr 0.67 FeO 3 (LSFO), 17 La 0.85 Sr 0. 15 CoO 3 ,17 Cr-doped SrZrO 3 , 18 and Cr-doped SrTiO 3 .…”

Section: Formation Of Transition Layers At Metal=perovskite Oxide Intsupporting

confidence: 81%

Formation of transition layers at metal/perovskite oxide interfaces showing resistive switching behaviors

Yamamoto¹,

Yasuhara²,

Ohkubo³

et al. 2011

Journal of Applied Physics

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Articles you may be interested inCrystallinity dependence of resistive switching in Ti/Pr(Sr0.1Ca0.9)2Mn2O7/Pt: Filamentary versus interfacial mechanisms Appl. Phys. Lett. 104, 093502 (2014); 10.1063/1.4867483 Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol J. Appl. Phys. 111, 084512 (2012); 10.1063/1.4705283 Interfacial chemical states of resistance-switching metal/ Pr 0.7 Ca 0.3 MnO 3 interfaces Appl. Phys. Lett. 97, 132111 (2010); 10.1063/1.3496033Electric-field-induced resistance switching universally observed in transition-metal-oxide thin filmsThe authors have investigated the chemical states at the interface of metal=perovskite oxides both with and without bipolar resistive switching (RS) behavior using photoemission spectroscopy and x-ray absorption spectroscopy. Al=Pr 0.7 Ca 0.3 MnO 3 (PCMO), Al=La 0.7 Ca 0.3 MnO 3 (LCMO), and Al=La 0.33 Sr 0.67 FeO 3 interfaces were chosen as typical examples of interfaces for the perovskite-based resistance random access memory (ReRAM), while Pt=PCMO and Ag=LCMO were chosen as references for the metal=perovskite interface without RS behavior. Detailed analyses of spectroscopic data revealed that transition layers were formed at the interfaces showing RS behavior as a result of interfacial redox reactions between the Al electrodes and the transition metal ions in the oxides. On the other hand, for the interfaces that did not exhibit RS behavior, no chemical reaction occurred at the interface. The formation of the interfacial transition layer is naturally explained by considering the redox potential between the electrode materials and transition metal ions. These results suggest that a suitable combination of electrodes and oxides could be designed based on their redox potentials.

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Section: Formation Of Transition Layers At Metal=perovskite Oxide Intsupporting

confidence: 81%

Formation of transition layers at metal/perovskite oxide interfaces showing resistive switching behaviors

Yamamoto¹,

Yasuhara²,

Ohkubo³

et al. 2011

Journal of Applied Physics

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“…A model with interfacial nanostructured domains composed of Ag and insulator AlOx matrix was proposed to explain the characteristics of the Ag-Al alloy electrode TE sample. 18) Fig. 3(b) shows the schematic diagram of the interface layer …”

Section: Resultsmentioning

confidence: 99%

“…21) On the basis of this model, it is thought that the properties of the point-contact Ag/LCMO interface such as contact area and AlOx surrounding Ag grain have a great influence on the resistance switching properties of Ag-Al alloy/LCMO/Pt structures. The Al-33%Ag TE structure shows lower pulse voltage (±5 V) and shorter pulse width (100 ns) than those of Al-50%Ag TE structure, 18) which may be attributed to the different contact state of Ag-Al alloy/ LCMO interface. As seen in Table 1, the resistance value of HRS and LRS of Al-33%Ag TE structure are significantly larger than those of Al-50%Ag TE structure, which also suggests that the effective area of Ag/LCMO memory cell was reduced in Al33%Ag TE structure.…”

Section: Jcs-japanmentioning

confidence: 93%

“…The observed switching property is better than that in Al-50%Ag/ LCMO/Pt structure. 18) Under the applied pulses of ± 5 V magnitude and as low as 100 ns duration, the ratio of resistance change is more than 1000% and switching cycle is larger than 400.…”

Section: Introductionmentioning

confidence: 96%

“…3),4) On the other hand, when an easily oxidized metal like Ti or Al is used, the switching speed is quite slow, on the order of 1 ms. 12), 17) In our recent research, Al-50%Ag alloy TE has been developed to realize the resistance switching of a noncrystalline and low-resistance LCMO thin film, 18) and positive EPIR has been found in Al-50%Ag/LCMO/ Pt structure. Meanwhile, under the applied pulses of ±10 V magnitude and as long as 10 μs duration, the average ratio of resistance change (RHRS-RLRS)/RLRS × 100% is around 120%, which can meet the need of practical applications for RRAM.…”

Section: Introductionmentioning

confidence: 99%

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Bipolar resistance switching property of Al-Ag/La0.7Ca0.3MnO3/Pt sandwiches

Liu

et al. 2009

J. Ceram. Soc. Japan

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Bipolar resistance switching was investigated on La0.7Ca0.3MnO3 (LCMO) thin film with Al-Ag alloy top electrode (TE) including different Ag contents. The switching capability of Al-Ag/LCMO/Pt was greatly improved in Al-33%Ag TE structure compared to in Al-50%Ag TE structure. Switching times of faster than 100 ns and rewrite cycles of more than 400 were obtained while maintaining a ratio of resistance change larger than 1000%. The mechanism of resistance switching was explained by a model with interfacial nanostructured domains composed of Ag and insulator AlOx matrix, as previously proposed for Al50%Ag/LCMO/Pt structure.

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Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications

Wang

Rao

Midya

et al. 2017

Adv Funct Materials

260

233

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Threshold switches with Ag or Cu active metal species are volatile memristors (also termed diffusive memristors) featuring spontaneous rupture of conduction channels. The temporal dynamics of the conductance evolution is closely related to the electrochemical and diffusive dynamics of the active metals which could be modulated by electric field strength, biasing duration, temperature, and so on. Microscopic pictures by electron microscopy and quantitative thermodynamics modeling are examined to give insights into the underlying physics of the switching. Depending on the time scale of the relaxation process, such devices find a variety of novel applications in electronics, ranging from selector devices for memories to synaptic devices for neuromorphic computing.is applied due to the formation of a conduction channel(s) with Ag or Cu atoms. Unlike the ECM cells, the resistance recovers back spontaneously upon cessation of the external bias, yielding a superior I-V nonlinearity [4][5][6][7][8][9][10][11] and unique temporal conductance evolution dynamics. [7,12,13] Such a relaxation process is due to the physical dissolution of the metallic conduction channel under driving forces such as minimization of interfacial energy. In case active metals are used as electrodes, these metals may be doped into the dielectrics eventually under the combined effect of electric fields, thermal diffusion, which may lead to a reduced threshold voltage for the subsequent switching, similar to the process called "electroforming." The unique delay and relaxation dynamics of Ag and Cu-based threshold switches make them suitable for innovative applications in circuits and systems.Threshold switches with Ag or Cu active metals are also termed as "diffusive memristors" [7] to emphasize the underlying nature of the diffusive dynamics of the metal species. Factors including bias amplitude, biasing duration, as well as ambient temperature have been observed to have an impact on such a process, showing a wide range of dynamical properties, which could be exploited as access devices for memories with fast transition (e.g., <100 ns) or synaptic emulators with a relatively slower evolution (e.g., >1 µs). We survey the recently developed material systems which have exhibited this kind of threshold switching. New evidences by electron microscopy and quantitatively thermodynamic modeling are examined to give insights into the underlying physics of the mechanisms. We also discuss applications enabled by the advent of such threshold switches. Temporal Response of the SwitchingThe dynamical response of threshold switching is a critical property for many applications but has been characterized to a lesser extent. The temporal responses could be probed by applying voltage pulses and measuring the resulting currents in the time domain. It is a general observation in both ECM and threshold switches that the conductance experienced a transition from insulating state to conducting state after a finite time duration (delay time) under the external bias, as ill...

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Improvement of resistive switching property in a noncrystalline and low-resistance La_0.7Ca_0.3MnO₃thin film by using an Ag–Al alloy electrode

Cited by 16 publications

References 22 publications

Formation of transition layers at metal/perovskite oxide interfaces showing resistive switching behaviors

Formation of transition layers at metal/perovskite oxide interfaces showing resistive switching behaviors

Bipolar resistance switching property of Al-Ag/La0.7Ca0.3MnO3/Pt sandwiches

Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications

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