2021
DOI: 10.1016/j.matchemphys.2021.124967
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Improvement of oxide removal rate in chemical mechanical polishing by forming oxygen vacancy in ceria abrasives via ultraviolet irradiation

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Cited by 33 publications
(11 citation statements)
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“…It was fixed at a distance of 3.5 cm apart from the surface when 500 mL of the slurry was placed in the beaker. The wavelength of the light generated by the UV-light source was 254 nm at 6 W, and the intensity of UV light on the surface of the solution was 489 mW/cm 2 25 . Since the light of wavelength lower than 254 nm can provide photon energy greater than that of the bandgap of the ceria particles (3–3.6 eV 79 ), the separation of the electron-hole pair from the valance band of ceria decreases the oxygen vacancy formation energy from 1.16 eV to -0.64 eV in the presence of UV light 25 .…”
Section: Methodsmentioning
confidence: 99%
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“…It was fixed at a distance of 3.5 cm apart from the surface when 500 mL of the slurry was placed in the beaker. The wavelength of the light generated by the UV-light source was 254 nm at 6 W, and the intensity of UV light on the surface of the solution was 489 mW/cm 2 25 . Since the light of wavelength lower than 254 nm can provide photon energy greater than that of the bandgap of the ceria particles (3–3.6 eV 79 ), the separation of the electron-hole pair from the valance band of ceria decreases the oxygen vacancy formation energy from 1.16 eV to -0.64 eV in the presence of UV light 25 .…”
Section: Methodsmentioning
confidence: 99%
“…The wavelength of the light generated by the UV-light source was 254 nm at 6 W, and the intensity of UV light on the surface of the solution was 489 mW/cm 2 25 . Since the light of wavelength lower than 254 nm can provide photon energy greater than that of the bandgap of the ceria particles (3–3.6 eV 79 ), the separation of the electron-hole pair from the valance band of ceria decreases the oxygen vacancy formation energy from 1.16 eV to -0.64 eV in the presence of UV light 25 . With the lowered oxygen vacancy formation energy, the electrons and holes generated from the UV irradiation reduce Ce 4+ to Ce 3+ and the holes oxidize O 2− anions 24 , 29 .…”
Section: Methodsmentioning
confidence: 99%
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“…Ultraviolet irradiation has also been applied to form O vacancies in layered materials. 105 Several researchers have observed that UV light irradiation produce O vacancies in BiOCl. [106][107][108] Due to low bond energy as well as long bond length between Bi and O in BiOCl, the Bi-O bond is easily broken by highpowered UV irradiation, leaving O vacancies.…”
Section: Ultraviolet Irradiationmentioning
confidence: 99%
“…The representative strategies reported to increase the Ce 3+ ratio in ceria NPs are abrasive doping with lanthanide elements, 25,26 synthesizing small aggregated particles, 27 forming core-shell structures [28][29][30] and irradiating ultraviolet (UV) light. 31 However, synthesizing a core-shell structure beyond a simple particle structure is complicated and inefficient in some cases. Also doping lanthanide elements or UV irradiation approaches have a limitation in terms of reacting homogeneously on the surface of particles.…”
Section: Introductionmentioning
confidence: 99%