Improvement of optical properties of nanocrystalline Fe-doped ZnO powders through precipitation method from citrate-modified zinc nitrate solution

Rattana, Tanattha; Suwanboon, Sumetha; Amornpitoksuk, Pongsaton; Haidoux, A.; Limsuwan, Pichet

doi:10.1016/j.jallcom.2009.02.011

Cited by 51 publications

(18 citation statements)

References 17 publications

(18 reference statements)

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“…40,41 The Burstein-Moss effect is frequently observed in n-type semiconductors. 42,43 Electron-doped ZnO with a high concentration of n-type carriers is easily achievable, because intrinsic defects in ZnO may render it naturally n-type. 23,44 An increase in the carrier concentration in Ni-doped ZnO will cause the Fermi level to move into the conduction band.…”

Section: Optical Propertiesmentioning

confidence: 99%

Photoluminescence studies on structural defects and room temperature ferromagnetism in Ni and Ni–H doped ZnO nanoparticles

Tong

Chen

Han

et al. 2010

Journal of Applied Physics

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We explore the effects of hydrogenated annealing on the crystal structure, room temperature ferromagnetism (RT-FM) and photoluminescence (PL) properties of Ni-doped ZnO (Zn1−xNixO, x=0.0 to 0.2) nanoparticles prepared by a sol-gel method. The x-ray photoelectron spectra and x-ray diffraction data provide evidence that Ni has been incorporated into the wurtzite ZnO lattice as Ni2+ ions substituting for Zn2+ ions at x≤0.05. A secondary phase of NiO type begins to form inside ZnO when x>0.05 and segregates from ZnO host lattice at x=0.2, leading to a large variation in the lattice constants of ZnO. The magnetization measurements show that the saturation magnetization (Ms) increases with increasing Ni concentration in the single-phase Zn1−xNixO (x≤0.05) nanoparticles. The secondary phase formation reduces the magnetization of Zn1−xNixO (x=0.1 and 0.15), while the segregation of NiO from the ZnO lattice at x=0.2 is accompanied by a large increase in Ms again. The PL measurements show that the UV emission intensity of single-phase Zn1−xNixO (x≤0.05) nanoparticles increases with a blueshift in the UV emission line when the Ni concentration increases, while the dominant green emission intensity decreases with increasing Ni dopant. The PL data strongly suggest that the FM in single-phase Zn1−xNixO (x≤0.05) nanoparticles is intrinsically correlated with a doping induced increase in the electron concentration in the conduction band of Ni-doped ZnO. After H2-annealing, the single-phase Zn1−xNixO:H (x≤0.05) nanoparticles show increases in both coercivity and saturation magnetization. The PL and diffuse reflectance spectra suggest that hydrogen-related shallow donors and an improved sample quality may be responsible for the H2-annealing induced enhancement of the RT-FM. The obvious correlation between FM and carrier concentration in Ni and Ni–H doped ZnO points towards a mechanism of carrier-mediated FM for Ni-doped ZnO diluted magnetic semiconductors.

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Section: Optical Propertiesmentioning

confidence: 99%

Photoluminescence studies on structural defects and room temperature ferromagnetism in Ni and Ni–H doped ZnO nanoparticles

Tong

Chen

Han

et al. 2010

Journal of Applied Physics

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“…Introduction zinc oxide (ZnO) is considered to be one of the most important multifunctional semiconductor material for technological applications such as light emitting diodes, gas sensors, drug delivery and transparent field effect transistors due to the wide band gap (3.37 eV), large excitation binding energy (60 meV) at room temperature and high transmission coefficient in the visible and near infrared spectral range [1,2]. Fe doped ZnO has been synthesized for optical properties [3] since Fe is an optical emitter in doped ZnO. (Cr)-(Fe) co-doped ZnO was an efficient doping element to improve the structural and optical properties of ZnO nanomaterials [4].…”

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confidence: 99%

Physical properties of ZnO nanoparticles doped with Mn and Fe

Moussa

Bakeer

Awad

et al. 2017

J. Phys.: Conf. Ser.

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“…ZnO itself has normally a hexagonal or wurtzite structure and it is well-known as an n-type II-VI semiconductor with a wide direct band-gap of about 3.37 eV and a large exciting binding energy of 60 meV [6]. From this point of view nanostructured ZnO powders display an excellent potential in many applications such as gas sensors [7], solar cells [8], and photocatalyst with high chemical activity [9]. On the other hand, the ZnO characteristics can be enhanced by incorporating other element on its.…”

Section: Introductionmentioning

confidence: 99%

Surfactant-less Sol-Gel Technique for the Synthesis of Mg-ZnO Nanoparticle

Kadhim

Hasbi

2017

MATEC Web Conf.

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Abstract. In this study, sol-gel technique has been used to prepare nanoparticle Mg doped ZnO with 2 wt. % at low pH without using any capping or surfactant agent. The Mg-ZnO nanostructure, surface area and porosity, surface morphology and element analysis was analyzed by X-Ray Diffraction (XRD), Fourier Transforms Infra-Red (FTIR), N2 Physisorption and Field Emission Scanning Electron Microscopy with energy dispersive X-ray spectroscopy (FESEM-EDX). The characterizations confirmed that the surfactant is not necessary for sol-gel synthesis technique, whereby highly crystalline material with smaller crystallite size (30nm) and high surface area (21.7) was obtained. Besides, the synthesis approach is useful for accurately immobilized the required amount of Mg as doping element on ZnO material with the accuracy up to 99.5% confirmed through EDX analysis.

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Improvement of optical properties of nanocrystalline Fe-doped ZnO powders through precipitation method from citrate-modified zinc nitrate solution

Cited by 51 publications

References 17 publications

Photoluminescence studies on structural defects and room temperature ferromagnetism in Ni and Ni–H doped ZnO nanoparticles

Photoluminescence studies on structural defects and room temperature ferromagnetism in Ni and Ni–H doped ZnO nanoparticles

Physical properties of ZnO nanoparticles doped with Mn and Fe

Surfactant-less Sol-Gel Technique for the Synthesis of Mg-ZnO Nanoparticle

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