Improvement of optical and electrical properties of Boron-doped ZnO films by ITO buffer layers for photovoltaic application

Yang, Hung-Jen; Chen, Chien‐Hsun; Wu, Kuen-Yi; Fan, Chia‐Ming; Wu, Chien‐Liang; Huang, Chun-Ming; Chen, Chun-Heng; Hwang, Jiann Yang

doi:10.1016/j.jtice.2014.08.028

Cited by 4 publications

(2 citation statements)

References 21 publications

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“…ZnO has potential for application in optoelectronics and spintronic devices due to its unique properties such as a wide band gap (3.37 eV) at room temperature and its high exciton binding energy (60 meV) [5][6][7][8][9][10][11][12][13][14][15][16][17]. Its practical application areas include light-emitting diodes, ultraviolet photodetectors, solar cells and collectors, electrochromic devices, gas sensors, hydrogen production and surface acoustic wave devices [1,9,12,[14][15][16][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Solution-Processable Growth and Characterization of Dandelion-like ZnO:B Microflower Structures

et al. 2021

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Intrinsic and dandelion-like microflower nano-rod structures of boron-doped ZnO thin films were synthesized with an ecofriendly and cost-effective chemical bath deposition technique from an aqueous solution of zinc nitrate hexahdyrate [Zn(NO3)2.6H2O] as a precursor solution and boric acid as a doping solution. The boron concentrations were 0.1, 0.3, 0.5, 1.0, 3.0, 5.0, and 7.0 by volume. Scanning electron micrographs showed that doping with boron appears to hinder the vertical alignment of crystallites. Additionally, independent hexagonal nano-rod structures were observed to coalesce together to form dandelion-like structures on the film’s surface. The atomic ratio of the elements was determined via the X-ray photoemission spectrum technique. There were no substantial changes in the vibration structure of the film upon doping in terms of the Raman spectra. The optical band gap of ZnO (3.28 eV) decreased with B doping. The band gap of the ZnO:B film varied between 3.18 and 3.22 eV. The activation energy of the ZnO was calculated as 0.051 eV, whereas that of the ZnO:B film containing 1.0% B was calculated as 0.013 eV at low temperatures (273–348 K), versus 0.072 eV and 0.183 eV at high temperatures (348–523 K), respectively. Consequently, it can be interpreted that the 1% B-doped ZnO, which has the lowest activation energy at both low and high temperatures, may find some application areas such as in sensors for gases and in solar cells.

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Section: Introductionmentioning

confidence: 99%

Solution-Processable Growth and Characterization of Dandelion-like ZnO:B Microflower Structures

et al. 2021

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“…In addition, these films have wide range of well perspective applications using flexible substrates such as: optoelectronic devices [9,10], flat panel displays [11,12,13], photovoltaic devices; DSSC [14,15,16,17,18,19], organic solar cells [20,21,22], organic light emitting diode [23,24,25], gas sensors [26,27], light emitting transistor [28], photocatalytic [29,30], electrochromic [31,32], perovskite solar cells [33,34], microelectronic devices [35], and thin film transistor [36,37]. Transparent thin films are usually fabricated by using different techniques, such as: sol-gel (spin coating) [38,39], spray pyrolysis [40,41,42], reactive magnetron sputtering [43,44,45], chemical vapor deposition (LPCVD) [46,47,48], pulse laser deposition (PLD) [4,49,50], and RF magnetron sputtering [51,52]…”

Section: Introductionmentioning

confidence: 99%

Optical constants of DC sputtering derived ITO, TiO2 and TiO2:Nb thin films characterized by spectrophotometry and spectroscopic ellipsometry for optoelectronic devices

Rasheed¹,

Barille²

2017

Journal of Non-Crystalline Solids

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Thin films of inorganic materials as Tin-doped indium oxide, titanium oxide, Niobium doped titanium oxide, were deposited for comparison on glass and Polyethylene terephthalate (PET) substrates with a DC sputtering method. These thin films have been characterized by different techniques: Dektak Surface Profilometer, X-ray diffraction (XRD), SEM, (UV/Vis/NIR) spectrophotometer and spectroscopic ellipsometry (SE). The optical parameters of these films such as transmittance, reflectance, refractive index, extinction coefficient, energy gap obtained with different electronic transitions, real and imaginary ( , ) dielectric constants, were determined in the wavelengths range of (200 -2200) nm. The results were compared with SE measurements in the ranges of (0.56-6.19) eV by a new amorphous model with steps of 1 nm. SE measurements of optical constant have been examined and confirm the accuracy of the (UV/Vis/NIR) results. The optical properties indicate an excellent transmittance in the visible range of (400 -800) nm. The average transmittance of films on glass is about (86%, 91%, 85%) for (ITO, TiO 2 , TiO 2 :Nb (NTO)) respectively and decreases to about (85%, 81%, 82%) for PET substrates. For all these materials the optical band gap for direct transition was (3.53, 3.3, 3.6) eV on glass substrates and on PET substrates using two methods (UV and SE). A comparison between optical constants and thickness of these ultrathin films observed gives an excellent agreement with the UV results. The deposited films were also analyzed by XRD and showed an amorphous structure. The structural morphology of these thin films has been investigated and compared.

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Growth, characterization, and analysis of the nanostructures of ZnO:B thin films grown on ITO glass substrates by a LPCVD: a study on the effects of boron doping

Chen

Lai

Tsai

et al. 2019

J Mater Sci: Mater Electron

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Improvement of optical and electrical properties of Boron-doped ZnO films by ITO buffer layers for photovoltaic application

Cited by 4 publications

References 21 publications

Solution-Processable Growth and Characterization of Dandelion-like ZnO:B Microflower Structures

Solution-Processable Growth and Characterization of Dandelion-like ZnO:B Microflower Structures

Optical constants of DC sputtering derived ITO, TiO2 and TiO2:Nb thin films characterized by spectrophotometry and spectroscopic ellipsometry for optoelectronic devices

Growth, characterization, and analysis of the nanostructures of ZnO:B thin films grown on ITO glass substrates by a LPCVD: a study on the effects of boron doping

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