Improvement of molecular beam epitaxy-grown low-temperature GaAs through <i>p</i> doping with Be and C

Specht, P.; Lutz, R. C.; Zhao, R.; Weber, E. R.; Liu, W. K.; Bacher, K.; Towner, Fred; Stewart, T.; Luysberg, M.

doi:10.1116/1.590747

Cited by 36 publications

(9 citation statements)

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“…Dislocation and As Ga antisite defects were measured at concentrations of 10 9 cm ÿ2 and 2 10 20 cm ÿ3 , respectively [23]. Specimens with 011 surfaces were prepared in cross section geometry and thinned by low voltage (500 V)/low angle (6 ) Ar ion milling to electron transparency.…”

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confidence: 99%

Distortion and Segregation in a Dislocation Core Region at Atomic Resolution

Beckman

Specht

et al. 2005

Phys. Rev. Lett.

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The structure of an isolated, Ga terminated, 30 degree partial dislocation in GaAs:Be is determined by high resolution transmission electron microscopes and focal series reconstruction. The positions of atomic columns in the core region are measured to an accuracy of better than 10 pm. A quantitative comparison of the structure predicted by an ab initio electronic structure total energy calculation to the experiment indicates that theory and experiment agree to within 20 pm. Further analysis shows the deviations between theory and experiment appear to be systematic. Electron energy loss spectroscopy establishes that defects segregate to the core region, thus accounting for the systematic deviations.

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Distortion and Segregation in a Dislocation Core Region at Atomic Resolution

Beckman

Specht

et al. 2005

Phys. Rev. Lett.

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“…[10] The doping by beryllium (Be) atoms can enhance some LTG-GaAs properties, which are essential for ultrafast optoelectronic and terahertz devices. [2,3,11,12] Be doping can reduce the carrier trapping time and increase LTG-GaAs resistance at certain doping concentrations and MBE growth conditions. The effect was shown to follow from the compensation of the As Ga donor defects by Be acceptors.…”

Section: Introductionmentioning

confidence: 99%

“…Apart from beryllium impurity, also carbon acceptor doping of LTG-GaAs was reported. [11] Although silicon (Si) is widely used as an n-type dopant for GaAs on (100)-oriented substrates, Si is found to be an amphoteric dopant in GaAs (n11)A with indexes n ¼ 1, 2…. [13][14][15][16][17] Si atoms can occupy Ga sites in GaAs crystal lattice as donor defects or As sites as acceptor defects.…”

Section: Introductionmentioning

confidence: 99%

Si‐Doping of Low‐Temperature‐Grown GaAs Heterostructures on (100) and (111)A GaAs Substrates

Клочков

Галиев

Климов

et al. 2022

Physica Status Solidi (b)

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Utilizing the amphoteric property of silicon impurity in GaAs (111)A for acceptor doping of low‐temperature‐grown (LTG‐) GaAs films and LTG‐GaAs‐based heterostructures for THz photoconductive applications is proposed and realized. The electronic properties of superlattice structures {LTG‐GaAs/GaAs:Si} grown by molecular beam epitaxy on (100) and (111)A GaAs substrates are experimentally investigated, where GaAs:Si are silicon‐doped GaAs layers grown at standard conditions. The use of GaAs substrates with surface orientation (111)A results in spatially indirect p‐type doping of LTG‐GaAs layers. In addition, the charge redistribution at the LTG‐GaAs/GaAs:Si interfaces, due to the presence of silicon atoms in GaAs:Si layers and antisite point defects in adjacent LTG‐GaAs layers, is also analyzed by means of band structure modeling.

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“…Для создания фотопроводящих антенн широко используются структуры из LT-GaAs, легированные бе-риллием [9][10][11]. В таких структурах происходит снижение механических напряжений и возможно существенное уменьшение времени жизни неравновесных носителей.…”

Section: Introductionunclassified

“…В таких структурах происходит снижение механических напряжений и возможно существенное уменьшение времени жизни неравновесных носителей. Считается, что это связано с увеличением доли ионизованных центров [As + Ga ]/[As Ga ] от единиц процентов до ∼ 50% [11] в результате внедрения в решетку LT-GaAs акцепторных атомов Be, которые приводят к ионизации глубоких доноров As Ga . Однако изза высокой токсичности бериллия использование его при МЛЭ требует дополнительных мер безопасности.…”

Section: Introductionunclassified

Электрофизические и фотолюминесцентные исследования сверхрешeток \LT-GaAs/GaAs : Si\, выращенных методом молекулярно-лучевой эпитаксии на подложках GaAs с ориентацией (100) и (111)А

Галиев¹,

Климов²,

Клочков³

et al. 2019

Физика И Техника Полупроводников

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The results of studying semiconductor structures proposed for the first time and grown, which combine the properties of LT-GaAs with p -type conductivity upon doping with Si, are presented. The structures are {LT-GaAs/GaAs:Si} superlattices, in which the LT-GaAs layers are grown at a low temperature (in the range 280–350°C) and the GaAs:Si layers at a higher temperature (470°C). The p -type conductivity upon doping with Si is provided by the use of GaAs(111)A substrates and the choice of the growth temperature and the ratio between As_4 and Ga fluxes. The hole concentration steadily decreases, as the growth temperature of LT-GaAs layers is lowered from 350 to 280°C, which is attributed to an increase in the roughness of interfaces between layers and to the formation of regions depleted of charge carriers at the interfaces between the GaAs:Si and LT-GaAS layers. The evolution of the photoluminescence spectra at 77 K under variations in the growth temperature of LT-GaAs is interpreted as a result of changes in the concentration of Ga_As and V _Ga point defects and Si_Ga– V _Ga, V _As–Si_As, and Si_As–Si_Ga complexes.

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Improvement of molecular beam epitaxy-grown low-temperature GaAs through p doping with Be and C

Abstract: Articles you may be interested inProperties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr 4

Cited by 36 publications

References 10 publications

Distortion and Segregation in a Dislocation Core Region at Atomic Resolution

Distortion and Segregation in a Dislocation Core Region at Atomic Resolution

Si‐Doping of Low‐Temperature‐Grown GaAs Heterostructures on (100) and (111)A GaAs Substrates

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