Improvement of Metal–Insulator–Semiconductor-Type Organic Light-Emitting Transistors

Nakamura, Kenji; Hata, Takuya; Yoshizawa, Atsushi; Obata, Katsunari; Endo, Hiroyuki; Kudo, Kazuhiro

doi:10.1143/jjap.47.1889

Cited by 46 publications

(48 citation statements)

References 34 publications

(34 reference statements)

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“…2 During the development of MBTs, a related device, the permeable-base transistor ͑PBT͒ was also developed, which differs from the MBT due to the existence of unintentionally existing pinholes or intentionally introduced grid structure in the base. 5 In the past decade, several organic materials were used to demonstrate several hybrid and all-organic vertical architecture transistors, [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] including hybrid MBTs with the base made of conducting polymer blend instead of a metal. 5 In the past decade, several organic materials were used to demonstrate several hybrid and all-organic vertical architecture transistors, [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] including hybrid MBTs with the base made of conducting polymer blend instead of a metal.…”

mentioning

confidence: 99%

Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter

Silva

Hümmelgen

Mello

et al. 2008

Applied Physics Letters

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mentioning

confidence: 99%

Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter

Silva

Hümmelgen

Mello

et al. 2008

Applied Physics Letters

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“…LEFETs have potential for applications in active matrix displays [32], sensors, and have also been suggested as a possible route towards creating the first organic injection laser [6]. This is because LEFETs can sustain higher current densities than OLEDs without breaking down.…”

Section: Light-emitting Field-effect Transistorsmentioning

confidence: 99%

“…The earliest report incorporates an evaporated blend of fac-tris(2-phenylpyridine)iridium (8 wt%): [8 % wt]:CBP) as the emissive layer into the device [32].…”

Section: Phosphorescent Lefetsmentioning

confidence: 99%

“…In the vertical LEFETs reported by Nakamura et. al., the device was essentially an OLED on top of a pentacenebased transistor in parallel to switch the OLED on [32]. The gate electrode was also positioned vertically relative to the source and drain electrodes.…”

Section: Vertical Lefetsmentioning

confidence: 99%

“…Blends of Ir(ppy) 3 and CBP have also been used in conjunction with other emissive layers to form white emitting devices [117]. Despite the widespread use of phosphorescent emissive layers in OLEDs, there have only been a limited number of reports in the literature on LEFETs [5,32,[70][71][72].…”

Section: Introductionmentioning

confidence: 99%

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Active channel field-effect transistors: Towards high performance light emitting transistors

Tandy¹

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This thesis describes the study of the development and device physics of organic field-effect transistors and organic light-emitting field-effect transistors. Using chemical and physical properties of organic semiconductors such as light emission, multi-functional devices, or "Active Channel Field-Effect Transistors" can be created. This thesis first describes the creation of basic ambipolar FETs before building on this knowledge to develop ambipolar as well as hole-dominated light emitting field-effect transistors.Ambipolar FETs using a diketopyrrolopyrrole-based copolymer were first investigated in this thesis. When gold electrodes were used, the devices could transport only holes. The charge injection was altered by changing the contacts to aluminium. The devices then were able to conduct both electrons and holes with maximum electron and hole mobilities of order 10 −4 cm 2 V −1 s −1 and 10 −3 cm 2 V −1 s −1 respectively.Light-emitting field-effect transistors were first studied using the model emissive polymerSuper Yellow. Charge injection was studied by altering the electron-injecting contact. Materials used included the low work function metals Ca, Ba and Sm, the inorganic salt Cs 2 CO 3 and the organic material TPBi. Ambipolar devices were created using a neat Super Yellow layer. Electron and hole mobilities in these devices were both of the order of 10 −4 cm 2 V −1 s −1 . The maximum external quantum efficiency was 1.2 ± 0.2 % with a Sm electron-injecting contact, however this occurred at a brightness of less than 1 cd m −2 . A maximum brightness of 43 ± 9 cd m −2 was obtained using a Cs 2 CO 3 -Ag electron-injecting contact in electron accumulation mode. At this brightness, the external quantum efficiency was 0.19 ± 0.04 %.Unipolar devices were also fabricated by adding high mobility charge transport layer of PBTTT underneath the Super Yellow. Since PBTTT had a hole mobility that was orders of magnitude greater than the charge carrier mobilities of Super Yellow, charges were transported in the PBTTT, and recombined within the Super Yellow layer. Super Yellow acted as an emissive layer only. Using this bilayer device architecture, a maximum brightness of 100 ± 4 cd m −2 was obtained with a Ca electron-injecting contact. An external quantum efficiency of 0.04 ± 0.01 % was achieved at the maximum brightness.In order to improve the external quantum efficiency of LEFETs, phosphorescent materials were chosen for use as the emissive layer. A co-evaporated layer of the iridium complex Ir(ppy) 3 in a host of CBP was initially used in the devices. Charge injection was studied by using either a Ba or a TPBi/Ba electron-injecting contact. 4Devices were first fabricated using PBTTT as a hole-dominated charge transport layer.Using a TPBi/Ba electron-injecting contact, the maximum brightness achieved was 200 ± 40 cd m −2with an external quantum efficiency of 0.18 ± 0.01 % at the maximum brightness. Devices were then fabricated using a charge transport layer of DPP-DTT to create ambipolar devices. Electron and ...

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Light‐Emitting Organic Transistors

Zaumseil

2012

Organic Electronics II

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Improvement of Metal–Insulator–Semiconductor-Type Organic Light-Emitting Transistors

Cited by 46 publications

References 34 publications

Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter

Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter

Active channel field-effect transistors: Towards high performance light emitting transistors

Light‐Emitting Organic Transistors

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