2013
DOI: 10.1117/1.jmm.12.1.013017
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Improvement of insertion loss and quality factor of flexural plate-wave-based alpha-fetoprotein biosensor using groove-type reflective grating structures

Abstract: Abstract. Conventional flexural plate-wave (FPW) transducers have limited applications in biomedical sensing due to their disadvantages such as high insertion loss and low quality factor. To overcome these shortcomings, we propose a FPW transducer on a low phase velocity insulator membrane (5-μm-thick SiO 2 ) with a novel groove-type reflective grating structure design. Additionally, a cystamine self-assembly monolayer and a glutaraldehyde cross-linking layer are implemented on the backside of the FPW device t… Show more

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Cited by 2 publications
(5 citation statements)
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References 31 publications
(25 reference statements)
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“…A 200-Å-thick Cr layer and a 1500-Å-thick Au layer were continually deposited onto the Si/SiO 2 /Si 3 N 4 layers by an e-beam evaporator to form a ground plane of the FPW device. The (111) plane of the gold (Au) metal layers well matched with the (002) plane of the piezoelectric layer (ZnO) [8,11,12]. The Au and Cr thin layers were patterned by the Au etchant (3%I 2 : 40%KI: 57%H 2 O) and the Cr etchant (Cr-7T), respectively (Figure 3b).…”
Section: Methodsmentioning
confidence: 99%
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“…A 200-Å-thick Cr layer and a 1500-Å-thick Au layer were continually deposited onto the Si/SiO 2 /Si 3 N 4 layers by an e-beam evaporator to form a ground plane of the FPW device. The (111) plane of the gold (Au) metal layers well matched with the (002) plane of the piezoelectric layer (ZnO) [8,11,12]. The Au and Cr thin layers were patterned by the Au etchant (3%I 2 : 40%KI: 57%H 2 O) and the Cr etchant (Cr-7T), respectively (Figure 3b).…”
Section: Methodsmentioning
confidence: 99%
“…Furthermore, to construct the IDTs of the proposed FPW devices, a 200-Å-thick Cr and an 1800-Å-thick Au layer were deposited by an e-beam evaporator and patterned by a lift-off photolithographic method, as shown in Figure 3d. These processes are similar to those in our previous studies [7,8,12], but to accurately control the thickness of the silicon thin-plate and substantially improve the fabrication yield of the FPW transducer, we replaced the original 80 °C [8] or 90 °C [12] one-step high-temperature anisotropic wet etching process with a 60 °C/27 °C two-step low-temperature anisotropic wet etching process. First, most of the backside silicon substrate (approximately 475 μm thick) of the four-inch Si-wafer (525 μm thick) was quickly removed in 30 wt %, 60 °C KOH anisotropic etching solution (Figure 3e).…”
Section: Methodsmentioning
confidence: 99%
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