Improvement of gas sensing behavior in reduced graphene oxides by electron-beam irradiation

Kwon, Yong Jung; Cho, Hong Yeon; Na, Han Gil; Lee, Byung Cheol; Kim, Sang Sub; Kim, Hyoun Woo

doi:10.1016/j.snb.2014.06.025

Cited by 41 publications

(24 citation statements)

References 41 publications

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“…Graphite was used as a starting material and GO was prepared by Hummer's method (Hummers and Offeman, 1958) with the same procedure in the previous report (Kwon et al, 2014). The oxidation process of 1 g of graphite was accomplished by stirring with 46 ml of H 2 SO 4 and 12 g KMnO 4 in the presence of 12 g H 3 PO 4 , which acted as strong oxidizing agents.…”

Section: Experimental Sample Preparationmentioning

confidence: 99%

“…It has also been utilized for the synthesis and modification of carbon-based materials such as carbon nanotubes (Smith and Luzzi, 2001) and fullerenes (Krasheninnikov and Banhart, 2007). The modification of its properties principally results from the creation of defects by EBI, which can greatly affect the final properties of materials, such as the gas-sensing properties (Kwon et al, 2014).…”

Section: Introductionmentioning

confidence: 99%

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Improvement of NO2 Sensing Properties in Pd Functionalized Reduced Graphene Oxides by Electron-Beam Irradiation

et al. 2019

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Herein, we present the effect of electron-beam irradiation (EBI) on the gas-sensing properties of Pd-functionalized reduced graphene oxide (RGO). Scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy were used to characterize the synthesized products. The samples were irradiated using electron beams at doses of 0 (Pd-RGO-0), 100 (Pd-RGO-100), and 500 kGy (Pd-RGO-500), and the NO2 gas-sensing properties were investigated. It was found that irradiation by electron beams has a critical effect on the gas-sensing properties of the samples, and the Pd-RGO-500 sensor showed the highest response to NO 2 gas. In particular, the response of the unirradiated sensor and the sensor irradiated at doses of 100 and 500 kGy to 10 ppm NO 2 were 1.027, 1.045, and 1.047, respectively. The response times of Pd-RGO-0, Pd-RGO-100, and Pd-RGO-500 to 10 ppm NO 2 gas were 389, 335, and 345 s, respectively. The corresponding recovery times for these sensors were 808, 766, and 816 s, respectively. The increased numbers of oxygen functional groups and high-energy defects were the main reasons for the increased gas response. This study will eventually lead to increased performance levels of RGO-based sensors that use EBI, as this technology can introduce changes into materials in a non-contact, clean, and powerful manner.

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Section: Experimental Sample Preparationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Improvement of NO2 Sensing Properties in Pd Functionalized Reduced Graphene Oxides by Electron-Beam Irradiation

et al. 2019

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“…EB can be used as a powerful and non contact tool to incorporate any of the mentioned phenomenon ultimately leading to modifications in chemiresistive gas sensing characteristics of CPs or its hybrid materials. Kwon et al have demonstrated high energy EB induced improvement in sensitivity of reduced graphene-oxide towards ppm order of NO 2 gas [201]. 2 MeV EB provokes oxygen functional group adsorption and non oxygen defects in reduced grapheneoxide which is mainly responsible for improved responsivity.…”

Section: Chemiresistive Gas Sensingmentioning

confidence: 99%

Electron Beam Induced Tailoring of Electrical Characteristics of Organic Semiconductor Films

et al. 2020

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Tailoring the characteristics of organic semiconductors including molecular semiconductor and conducting polymers is the frontline area of research for improving the performance of organic electronic devices. Electron beam treatment has been established as one of the easiest method in comparison to others like chemical doping, thermal processing, ozonolysis, UV and other ionizing radiation treatment, to tune the physico-chemical properties of organic semiconductors. High energy electron beam (EB) generated from an accelerators impinges energy to the material and causes several phenomena including doping, crosslinking, chain degradation, gas evolution, molecular structural modifications, oxidation and unsaturation. Such modifications lead to variation in electrical characteristics and consequently affect the overall device performances. In the present review we have focused on the different interaction processes of EB with organic semiconductors and its implications to tailor the performance of device comprising of it mainly gas sensors, field effect transistors, thermoelectric power generators and radiation dosimeters.

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“…Physical or chemical modification of graphene has therefore been investigated. Electron-beam irradiation [9], hydrogen plasma [10] and chemical-reduction reagent [11] have been employed to modify the surface of graphene while, at the same time, reducing GO. Additionally, a facile, low-cost, and efficient method has been reported by Cui et al [12] to tune the structure and the properties of RGO by applying a transient voltage across the RGO.…”

Section: Introductionmentioning

confidence: 99%

Graphene-based hybrids for chemiresistive gas sensors

Meng

Guo

Huang

2015

TrAC Trends in Analytical Chemistry

288

150

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Improvement of gas sensing behavior in reduced graphene oxides by electron-beam irradiation

Cited by 41 publications

References 41 publications

Improvement of NO2 Sensing Properties in Pd Functionalized Reduced Graphene Oxides by Electron-Beam Irradiation

Improvement of NO2 Sensing Properties in Pd Functionalized Reduced Graphene Oxides by Electron-Beam Irradiation

Electron Beam Induced Tailoring of Electrical Characteristics of Organic Semiconductor Films

Graphene-based hybrids for chemiresistive gas sensors

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