IEEE/SEMI Conference and Workshop on Advanced Semiconductor Manufacturing 2005.
DOI: 10.1109/asmc.2005.1438784
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Improvement of film uniformity stability of PECVD silicon nitride deposition process by addition of fluorine removal to the plasma clean sequence

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“…Following each PECVD process, HF was utilized to clean the reaction chamber, and it would react with Al 2 O 3 on the surface of the showerhead. 6 Long-term use of showerheads can lead to corrosion caused by HF, resulting in the formation of a fluoride layer on the surface. The thickness of the fluoride layer is related to the pressure of HF.…”
Section: Fluorine Layer and Microchannelsmentioning
confidence: 99%
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“…Following each PECVD process, HF was utilized to clean the reaction chamber, and it would react with Al 2 O 3 on the surface of the showerhead. 6 Long-term use of showerheads can lead to corrosion caused by HF, resulting in the formation of a fluoride layer on the surface. The thickness of the fluoride layer is related to the pressure of HF.…”
Section: Fluorine Layer and Microchannelsmentioning
confidence: 99%
“…This will directly affect the microchannel characteristics and, consequently, impact the uniformity of deposits. Zhao et al 6 argue that as the utilization rate of the chamber increases, the issue of uncontrolled film thickness uniformity becomes a persistent problem. They suggest that the formation of fluorine compounds on the surface of the showerhead is one of the factors contributing to this failure.…”
Section: Introductionmentioning
confidence: 99%