In this work, the fabrication and investigation of substituting higher-valence Mo 6+ for Ti 4+ ion on the B-site of La 3 +-doped Bi 4 Ti 3 O 12 [BLT] structure to form Bi 3.25 La 0.75 (Ti 1-x Mo x) 3 O 12 [BLTM] (when x = 0, 0.01, 0.03, 0.05 0.07, 0.09, and 0.10) ceramics were carried out. X-ray diffraction patterns of BLTM ceramics indicated an orthorhombic structure with lattice distortion, especially with a higher concentration of a MoO 3 dopant. Microstructural investigation showed that all ceramics composed mainly of plate-like grains. An increase in MoO 3 doping content increased the length and thickness of the grain but reduced the density of the ceramics. Electrical conductivity was found to decrease, while the dielectric constant increased with Mo 6+ doping concentration. Ferroelectric properties were found to be improved with increasing MoO 3 content and were optimized at x = 0.1.