Improvement of etching selectivity for 32-nm node mask making

Lu, Calvin; Hsia, Liang-Choo; Cheng, T. H.; Chang, Shu-Hao; Wang, W. C.; Lee, H. J.; Ku, Yao-Ching

doi:10.1117/12.728928

Cited by 2 publications

(2 citation statements)

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“…There are two alternative ways to solve this issue, introduction of hard mask or usage of thinner absorber considered optical density. [1] However, hard mask process has serious disadvantages, such as higher manufacturing expense and longer production time. While recently developed thin absorber having faster etch ratio has serious limitation of lower optical density, which is unsuitable for Binary Intensity Mask (BIM).…”

Section: Introductionmentioning

confidence: 99%

Patterning capability and limitations by pattern collapse in 45nm and below node photo mask production

Hwang¹,

Patil²,

Seo³

et al. 2008

SPIE Proceedings

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As the industry approaches to 45nm and below lithography, resolution and pattern collapse of SRAF (Sub Resolution Assistant Feature) on photoresist is becoming critical issues on photomask industry. The collapse of photoresist pattern has been become a serious problem in manufacturing of fine patterns in wafer and mask industries. The presumed causes of the resist pattern collapse are capillary forces acting on the patterns and adhesion property of the patterns. The use of thinner resist thickness has been known as one of the most effective method among reported literatures. However, etching resistance of present resist is still bad. Therefore it is difficult to reduce the photoresist thickness, though the pattern size is very small.In this paper, the available limits of resist thickness for FEP171 were calculated for several kinds of common absorber layers as considering current dry etch capability. We focused on pattern design and collapse window for SRAF. FEP171 resist performance especially for resolution and collapse window were evaluated for both 2000Å and 3000Å thickness with line, space, and length focused on sub 100nm features. Radial position effect and drying conditions were studied herein.

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Section: Introductionmentioning

confidence: 99%

Patterning capability and limitations by pattern collapse in 45nm and below node photo mask production

Hwang¹,

Patil²,

Seo³

et al. 2008

SPIE Proceedings

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show abstract

“…8 In addition, in the case of the aliphatic photoresist, the patterned photoresist is easily deformed during the extended exposure to plasma due to the its softness, creating problems such as wiggling and notching. [11][12][13][14][15] Among the various hardmask materials, the ACL has been investigated widely due to its advantages such as a high etch selectivity over a photoresist, high optical transmittance, easy deposition, and removability by oxygen plasma, similar to that of a remaining photoresist, after etching. [11][12][13][14][15] Among the various hardmask materials, the ACL has been investigated widely due to its advantages such as a high etch selectivity over a photoresist, high optical transmittance, easy deposition, and removability by oxygen plasma, similar to that of a remaining photoresist, after etching.…”

Section: Introductionmentioning

confidence: 99%

Study on the etching characteristics of amorphous carbon layer in oxygen plasma with carbonyl sulfide

Kim

Cho

Kim

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Carbonyl sulfide (COS) was added to oxygen as the additive etch gas for etching of amorphous carbon layers (ACL), and its effect on the etching characteristics of ACLs as the etch mask for high aspect ratio contact SiO2 etching was investigated. When a 50 nm amorphous carbon hole was etched in a gas mixture of O2 + 5% COS, not only did the etch profile of the ACL change more anisotropically but also the top/bottom opening ratio of the etch profile was improved by about 37% compared to those etched without COS. The improved ACL etch characteristics were related to the sidewall passivation of the amorphous carbon hole by the carbon sulfide related layer during the etching of the ACL. The distortion of the amorphous carbon hole was also reduced by about 6% due to the uniform deposition of the carbon sulfide related layer on the sidewall of the amorphous carbon hole. This uniform deposition improved the etch profile and opening ratio of the amorphous carbon hole, ultimately resulting in the enhanced contact oxide etching characteristics as evidenced by 5% improvement in the contact oxide opening and 20% improvement in the mask etch selectivity during the etching of an oxide having 20:1 high aspect ratio.

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Improvement of etching selectivity for 32-nm node mask making

Cited by 2 publications

References 0 publications

Patterning capability and limitations by pattern collapse in 45nm and below node photo mask production

Patterning capability and limitations by pattern collapse in 45nm and below node photo mask production

Study on the etching characteristics of amorphous carbon layer in oxygen plasma with carbonyl sulfide

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