Improvement of diode parameters in Al/n-Si Schottky diodes with Coronene interlayer using variation of the illumination intensity

Pakma, Osman; Çavdar, Şükrü; Koralay, Haluk; Tuğluoğlu, Nihat; Yüksel, Ömer Faruk

doi:10.1016/j.physb.2017.09.101

Cited by 25 publications

(8 citation statements)

References 40 publications

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“…In other words, the NAMA interfacial layer acts as the passivated material and therefore ECS Journal of Solid State Science and Technology, 2021 10 051001 causes a decreasing in N ss values. 45,46 Also, the reduced free carrier concentration due to the capture of carriers at the interface causes the interface state values to decrease. A plot of current density vs voltage (J-V) is shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Illumination Dependent Electrical and Photovoltaic Properties of Au/n-Type Si Schottky Diode with Anthracene-Based NAMA Interlayer

Eymür

Tuğluoğlu

Apaydın

et al. 2021

ECS J. Solid State Sci. Technol.

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A Schottky diode based on an organic semiconductor 9-[(5-nitropyridin-2-aminoethyl) iminiomethyl]-anthracene (NAMA) was fabricated on n-Si using a spin-coating technique. The current-voltage (I–V) measurements of Au/NAMA/n-Si/In were taken under dark and various illumination levels to investigation of the change in electrical and photoresponse characteristics such as ideality factor, barrier height and series resistance with illumination. Reverse bias saturation current (I 0), ideality factor (n), and barrier height (Φ B ) values were found as 6.43 × 10−8 A, 3.54 and 0.756 eV in dark (low region); and 2.17 × 10−10 A, 1.39 and 0.903 eV under 100 W illumination level (low region). The forward bias semi logarithmic (I–V) characteristics showed two current-transport mechanisms acting in the diode. It has been shown that all electrical parameters are sensitive to illumination. The current-transport mechanisms of the prepared diode was examined by using ln(I F ) vs ln(V F ) and ln(I R )–V R 1/2 plots. Moreover, Au/NAMA/n-Si diode showed good photovoltaic performance that shows that the fabricated diode can be used as a photodiode in optoelectronic applications.

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Section: Resultsmentioning

confidence: 99%

Illumination Dependent Electrical and Photovoltaic Properties of Au/n-Type Si Schottky Diode with Anthracene-Based NAMA Interlayer

Eymür

Tuğluoğlu

Apaydın

et al. 2021

ECS J. Solid State Sci. Technol.

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“…where  is the effective barrier height and is the electron charge. Therefore, the Nss values of Au/BOD-Z-EN/n-Si/In device were calculated by using eqn (7) and (8) According to this, as tabulated in Table 2, the characteristic photodiode parameters include Voc, Jsc, Vmax, Imax, FF and Pmax were calculated to obtain more information about the photovoltaic performance of the diode. As listed in Table 2, the increase in the values of Voc and Jsc with increasing in illumination intensity can be attributed to the increasing electron conductivity of organic interfacial layer.…”

Section: Resultsmentioning

confidence: 99%

“…It has been shown that the electrical and photoelectrical properties of metal-semiconductor (MS) contacts such as a barrier height and ideality factor can be easily improved with organic materials used as thin interfacial layer in MS structures. Many studies have reported that the organic film contacted with the inorganic semiconductor in MS contacts can affect the performance of these devices due to the change in the density of the interface states, saturation current, and diode resistance [2,[4][5][6][7][8][9][10][11]. Among the variety of organic compounds for the fabrication of organic-based optoelectronic devices, organic dyes stand out prominently due to their chemical tunability, band-gap improvement properties, high photoconductive features and diversity of chemical structures [12][13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Investigation of electrical and photovoltaic properties of Au/n-Si Schottky diode with BOD-Z-EN interlayer

Tezcan

Eymür

Taşcı

et al. 2021

J Mater Sci: Mater Electron

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4,4-Difluoro-4-bora-3a,4a-diaza-s-indacene (BODIPY) based BOD-Z-EN compound was used as an interfacial organic layer to fabrication of Au/BOD-Z-EN/n-Si/In diode. The electrical parameters of Au/BOD-Z-EN/n-Si/In diode such as ideality factor (n), barrier height (ΦB) and series resistance (Rs) have been investigated through current-voltage (I-V) studies at dark and under various illumination intensities to understand the effect of interlayer on the device properties. The values found for the n varied from 2.33 to 1.55 and the ΦB ranged from 0.86 eV to 0.90 eV as the illumination condition changed from dark to 100 mW/cm 2 . Series resistance (Rs) values calculated using Cheung's method were found to decrease with increasing illumination level. The forward bias I-V characteristics of the diode were explained by the space charge limited current (SCLC) theory. The main photovoltaic parameters such as open circuit voltage (Voc), short circuit current (Jsc) and fill factor (FF) were determined for various light intensity. The Au/BOD-Z-EN/n-Si/In diode exhibits a photovoltaic behavior with a Voc of 0.15 V and Jsc of 0.01 mA/cm 2 under 100 mw/cm 2 . Also, photosensitivity and photoresponsivity properties of the diode were determined. These all results indicate that Au/BOD-Z-EN/n-Si/In device can be used as photosensor in optoelectronic applications.

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“…As reported in many studies, interfacial layers, or oxide layers in the M/ S contact with distribution/localization interface states influence the electrical/dielectric properties and electrooptic characteristics of the MS diodes. [4][5][6][7][8] Since the charge transition between the metal and the semiconductor can be regulated by isolation with the interface layer, which causes reduced recombination in traps, it is not unexpected that many studies have been carried out to control the diode properties by using organic interfacial layers and minimize the interface states at the interface of MS to obtain Schottky diodes with different electrical properties and different thicknesses. 3,6,[9][10][11] The use of inorganic materials is a common method in optoelectronic devices with a wide range of uses such as photodiodes and photodetectors.…”

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confidence: 99%

“…As a result, the properties of organic materials, which are easy and low-cost production steps, can be used in electronic and optoelectronic fields, making it possible to produce heterojunction layer photosensitive devices. 8,[12][13][14][15][16][17] These organic layered heterojunction structures can be used instead of many inorganic-based materials in various optoelectronic applications such as photodiodes and solar cells. [18][19][20][21] Triphenylamine (TPA) derivatives as a hole transfer materials have become an exciting area in the last decades for their use in the fabrication of electroluminescent devices in different areas.…”

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confidence: 99%

Optoelectronic Properties of Triphenylamine Organic Thin Film Layered Al/p-Si /TPA/Al Heterojunction for Photodiode Application

Çavdar

Izmirli

Koralay

et al. 2023

ECS J. Solid State Sci. Technol.

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Organic semiconductors provide many advantages in diode fabrication due to their variable electrical properties, flexibility and easy and cheap production processes. In this study, triphenylamine (TPA) organic compound was used for the Al/p-Si/TPA/Al Schottky structure. The effect of the triphenylamine on the electrical properties of the produced diode was studied by current-voltage measurements in dark and under various illumination intensities. The main electrical parameters such as barrier height (ΦB), ideality factor (n), series resistance (R s), and interface state density (N ss) were obtained from the I-V characteristics. The n, Φ B and R s values of the diode were found as 1.88, 0.80 eV and 2195 Ω for dark, and 3.96, 0.71 eV and 17 Ω for 100 mW cm−2 illumination intensity. Besides, the fabricated device exhibited photodiode behavior as obtained from the photocurrent measurement for the diode, depending on the illumination intensity. Additionally, it was found that the Al/p-Si/TPA/Al diode had a higher photocurrent (I ph ) in illuminated conditions than in dark conditions. The main photovoltaic parameters such as open circuit voltage (V oc ) and short circuit current (I sc ) were also investigated. Photo-responsivity and response time (τ r, τ d) of the diode was obtained as 0,015 A W−1 and 800 ms respectively. All these results show that the Al/p-Si/TPA/Al diode has potential in optoelectronic device applications.

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Improvement of diode parameters in Al/n-Si Schottky diodes with Coronene interlayer using variation of the illumination intensity

Cited by 25 publications

References 40 publications

Illumination Dependent Electrical and Photovoltaic Properties of Au/n-Type Si Schottky Diode with Anthracene-Based NAMA Interlayer

Illumination Dependent Electrical and Photovoltaic Properties of Au/n-Type Si Schottky Diode with Anthracene-Based NAMA Interlayer

Investigation of electrical and photovoltaic properties of Au/n-Si Schottky diode with BOD-Z-EN interlayer

Optoelectronic Properties of Triphenylamine Organic Thin Film Layered Al/p-Si /TPA/Al Heterojunction for Photodiode Application

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