Abstract:Two GaN samples, with and without high temperature (HT)‐AlN interlayer (labelled as sample A and B, respectively) grown by MOCVD on AlN template, were investigated by double‐crystal X‐ray diffraction (DC‐XRD), photoluminescence (PL), and atomic force microscope (AFM) measurements. It was found that the crystal quality of GaN could be greatly improved by the HT‐AlN interlayer. The full width at half maximum (FWHM) of (102) reflection in XRD rocking curve was narrower for sample A than that for sample B. However… Show more
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