This work reports on the synthesis of p-type (Sb 1-x Bi x ) 2 Te 3 thin films using pulsed electrodeposition with and without the presence of an anionic surfactant, sodium dodecyl sulfate (SDS). The effect of SDS on the morphology of the films was investigated, and it was found that films with SDS in the electrolyte were smooth and denser as compared to the films without SDS. Post-deposition annealing of the films resulted in preferential crystal orientation. The Seebeck coefficient showed an improvement of 49% for the films deposited with SDS, which improved the overall power factor of the films by 143%. Data traffic is projected to increase sharply (40-80× by 2020) and this is driving an increase in network complexity and the requirement for scalable optoelectronic integration.1 A major bottleneck to this large scale integration is thermal management. Active photonic devices generate extremely high heat flux levels (∼10 kW/cm 2 ) that must be efficiently removed to maintain performance and reliability; furthermore, active photonic devices must be controlled at temperature precision better than ±0.1• C. Today's thermal technology is at the limit and cannot scale with growth in the network.
2Current state-of-the-art thermal design of Photonic Integrated Circuits (PICs) is unable to meet the challenge in data traffic over the coming years. Today's PICs employ macro thermoelectric cooler (TEC) that are inefficient in thermal management of the device. Micro-TEC integrated directly on the laser can more efficiently manage thermal cooling of the device. The aim of TIPS project 2 is to develop novel p and n type thermoelectric materials, and to design and develop a micro-thermoelectric cooler (μ-TEC), integrated around the PIC, which can effectively remove heat from the photonic system. As a part of this work, we have been trying to enhance the structural and thermoelectric (TE) properties of bismuth telluride based materials. Binary semiconductor Bismuth Telluride Bi-Te based materials have been extensively studied, and applied in thermoelectric generators (TEG) and thermoelectric coolers (TEC) devices because of their unique properties, which exhibit better figure of merit (ZT) near room temperature regime. [3][4][5][6]