Improvement in thermoelectric properties of CuAlO2 by adding Fe2O3

Non-calcining process for CuAlO2 and CuAl0.9Ca0.1O2 ceramics

“…As a result, pores stay attached to grain boundaries during grain growth because smaller pores can migrate faster, resulting in an increase in the density [25,26]. Similar results were also observed in their study of Fe added CuAlO 2 ceramics [27]. In their study CaO was used instead of CaCO 3 used in this study.…”

Thermoelectric properties of Cu1−xPtxFeO2 (0.0≤x≤0.05) delafossite-type transition oxide

“…The Cu 1−x Pt x FeO 2 sample for x = 0.05 shows highest value of power factor reaching 2.0 × 10 −4 W/mK 2 at temperature 960 K. The PF value of Cu 1−x Pt x FeO 2 sample for x = 0.05 at 960 K displays 2 times and 3 times higher than the CuFeO 2 sample at 960 K and at 300 K, respectively. Moreover, the highest PF value of the sample for x = 0.05 at 960 K is higher than those reported of CuFeO 2 (PF = 1.4 × 10 −4 W/mK 2 ) [28], CuFe 1−x Ni x O 2 (PF = 1.8 × 10 −4 W/mK 2 ) [15], and CuAl 1−x Fe x O 2 (PF = 0.9 × 10 −4 W/mK 2 ) [30]. The temperature dependence of thermal conductivity on Cu 1−x Pt x FeO 2 (0 ≤ x ≤ 0.05) samples as function of temperature in the range from 300 to 960 K is shown in Fig.…”

“…In addition, the ZT values of Cu 1−x Pt x FeO 2 samples are increased with increased Pt substitution of x content. The maximum ZT values of Cu 1−x Pt x FeO 2 samples are 0.03, 0.038, 0.044 and 0.05 for x = 0, 0.01, 0.03 and 0.05, respectively, at 960 K. Obviously, the Cu 1−x Pt x FeO 2 sample of x = 0.05 exhibits the highest value of ZT (=0.05), at 960 K. This value is higher than those reported of CuFeO 2 (ZT = 0.025) [28], CuAlO 2 (ZT = 0.004) [19], Cu 1−x Ag x AlO 2 (ZT = 0.016) [30], and CuFe 1−x Ni x O 2 (ZT = 0.045) [14].…”

Room temperature ozone sensing properties of p-type transparent oxide CuCrO2

“…Delafossites CuMO 2 (M is trivalent cation, such as Al, Cr and Sc), as p-type transparent conducting oxides (p-TCOs), have gained intense interests due to their potential application in 'invisible circuits', diluted magnetic semiconductors and thermoelectric materials [6][7][8]. Their structure can be described as sheets of edge-shared MO 6 octahedra alternating stacked with close-packed Cu-ions layers.…”