Improvement in the linear and nonlinear optical properties of Mn-doped GeSe2 chalcogenide thin films for all optical applications

Sharma, Pankaj; Aly, K.A.; Sati, Dinesh C.; Dahshan, A.

doi:10.1007/s00339-020-3357-3

Cited by 11 publications

(4 citation statements)

References 33 publications

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“…Generally, the obtained results are in good agreement with the literature. 54 The increase in the refractive index can be attributed to an increase in density by substituting sulphur with a larger amount of selenium. 55 From Table 2, it can be observed that the dielectric constant of the lattice increased with the increase in selenium doping.…”

Section: Results Analysis and Discussionmentioning

confidence: 99%

Enhancing the third-order nonlinearity and crystallinity by selenium incorporation in tin sulfide films (SnS_1−xSe_x) for optoelectronic applications

Parida¹,

Sahoo²,

Alagarasan

et al. 2022

Mater. Adv.

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Section: Results Analysis and Discussionmentioning

confidence: 99%

Enhancing the third-order nonlinearity and crystallinity by selenium incorporation in tin sulfide films (SnS_1−xSe_x) for optoelectronic applications

Parida¹,

Sahoo²,

Alagarasan

et al. 2022

Mater. Adv.

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“…For chalcogenide materials, nonlinearity is one of the important properties that covers a broad portion of the electromagnetic spectrum. Therefore, it has wide application in the field of optical switching, optical computing and electro-optics, infrared sensing, planar waveguides, etc. − The nonlinear properties of the materials are determined by the polarization effect of the material when electromagnetic radiation propagates through it. When an electric field is applied to the material, an induced polarization occurs inside it.…”

Section: Resultsmentioning

confidence: 99%

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As₂₀Ag₁₀Te₁₀Se₆₀ Thin Films for Optical Applications

Das¹,

Senapati²,

Alagarasan

et al. 2022

ACS Appl. Opt. Mater.

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This work focuses on the structural, optical, and morphological modifications in As 20 Ag 10 Te 10 Se 60 quaternary thin films that are ∼800 nm thick upon thermal annealing at different temperatures. The structure is analyzed by Xray diffraction that reveals the phase transformation (amorphous to crystalline) due to annealing. This material's phase transition enables it to be used in memory device applications. The increase in particle size is confirmed by field emission scanning electron microscopy of the surface. The increase in particle size signifies the agglomeration occurs at higher annealing temperatures. The optical transmittance shows a red shift toward a lower photon energy as recorded by the ultraviolet−visible spectrometer. The optical bandgap of the films decreases (1.84 to 1.72 eV), whereas the refractive index increases as calculated from the Swanepoel method. The decrease in the bandgap is attributed to the increases in the localized states. The amorphous to crystalline transition results in a significant increase in the third-order nonlinear susceptibility (from 4.524 × 10 −11 to 14.146 × 10 −11 esu). The nonlinear refractive index is found to increase from 5.385 × 10 −10 to 14.786 × 10 −10 esu upon annealing. The static and high-frequency dielectric constant increases with the increase in oscillator and dispersion energy. The observed changes are explained on the basis of phase transformation and the density of defect states. The enhanced value of the nonlinear refractive index with a reduced optical electronegativity and carrier concentration with annealing is useful for nonlinear optical devices.

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“…46 Sharma et al reported an improvement of the linear and nonlinear refractive indices of Mn-doped GeSe 2 films, in which the Mn doping element content increases, the optical band gap gradually decreases, and the linear and nonlinear refractive indices are sufficiently enhanced. 47 Divya et al reported a Mn-doped zinc nanoparticle and demonstrated its application prospects as an efficient OL device by calculating the third-order nonlinearity of the nanoparticle. 48 It is obvious that the Mn element has great potential in the field of optics, but, unfortunately, there is no study on the NLA properties of the pure Mn element; this also spit out the novelty of this work from the side.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Sharma et al. reported an improvement of the linear and nonlinear refractive indices of Mn-doped GeSe 2 films, in which the Mn doping element content increases, the optical band gap gradually decreases, and the linear and nonlinear refractive indices are sufficiently enhanced . Divya et al reported a Mn-doped zinc nanoparticle and demonstrated its application prospects as an efficient OL device by calculating the third-order nonlinearity of the nanoparticle .…”

Section: Introductionmentioning

confidence: 99%

2D Manganese Nanosheets with Optical-Limiting Behavior for Precision Instrument and Eye Protection

Yuan

Liu³

et al. 2022

ACS Appl. Nano Mater.

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Manganese (Mn), atomic number 25, belongs to Group VIIB in the Periodic Table and has high melting and boiling points. The hardness of Mn is slightly lower than that of iron, which exists widely in nature. Unlike the main-group elements, there is a paucity of research into the nonlinear optics of the subgroup elements. In this work, the broadband nonlinear absorption (NLA) properties of Mn nanosheets with average thicknesses of 5.0−11.0 nm were systematically analyzed using an open-aperture Z-scan technique for the first time as far as we know. The results show that Mn nanosheets exhibit excellent two-photon absorption (TPA) effects, i.e., optical-limiting (OL) behavior at the three wavelengths of 1064, 532, and 355 nm. In particular, the large TPA coefficient β of Mn nanosheets at 355 nm confirms the superior OL property in the ultraviolet region, which is promising for a wide range of applications in precision instrument and eye protection. This work will focus more on the NLA properties of transition metals.

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Improvement in the linear and nonlinear optical properties of Mn-doped GeSe2 chalcogenide thin films for all optical applications

Cited by 11 publications

References 33 publications

Enhancing the third-order nonlinearity and crystallinity by selenium incorporation in tin sulfide films (SnS_1−xSe_x) for optoelectronic applications

Enhancing the third-order nonlinearity and crystallinity by selenium incorporation in tin sulfide films (SnS_1−xSe_x) for optoelectronic applications

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As₂₀Ag₁₀Te₁₀Se₆₀ Thin Films for Optical Applications

2D Manganese Nanosheets with Optical-Limiting Behavior for Precision Instrument and Eye Protection

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Improvement in the linear and nonlinear optical properties of Mn-doped GeSe2 chalcogenide thin films for all optical applications

Cited by 11 publications

References 33 publications

Enhancing the third-order nonlinearity and crystallinity by selenium incorporation in tin sulfide films (SnS1−xSex) for optoelectronic applications

Enhancing the third-order nonlinearity and crystallinity by selenium incorporation in tin sulfide films (SnS1−xSex) for optoelectronic applications

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As20Ag10Te10Se60 Thin Films for Optical Applications

2D Manganese Nanosheets with Optical-Limiting Behavior for Precision Instrument and Eye Protection

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Product

Resources

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Enhancing the third-order nonlinearity and crystallinity by selenium incorporation in tin sulfide films (SnS_1−xSe_x) for optoelectronic applications

Enhancing the third-order nonlinearity and crystallinity by selenium incorporation in tin sulfide films (SnS_1−xSe_x) for optoelectronic applications

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As₂₀Ag₁₀Te₁₀Se₆₀ Thin Films for Optical Applications