Improvement in Stability and Storage Performance of All-Inorganic Perovskite CsPb(Br_1–xI_x)₃ Memristors Based on Simple Halide Ion Migration

Abstract

The facile ionic transport in all-inorganic CsPbX3 is crucial for the switching behavior and reliability of ion migration-based memristors. This work presents a method of halide ion doping to reduce the bromine vacancies on the surface of CsPbBr3 quantum dots (QDs) and enhance the migration barriers of bromine ions. This improves the performance of memristors and achieves a more stable resistive switching process. The switching voltages (V SET/V RESET) for the CsPb­(Br0.93I0.07)3 QD-based device are 0.92 V/–3.01 V. The V SET/V RESET dispersion range has narrowed from ±0.12 V/±0.16 V for the CsPbBr3 QD-based device to a more consistent ±0.07 V/±0.11 V, resulting in a notable improvement in switching voltage uniformity. The stability of the device over 100 cycles has been optimized, and the HRS resistance varies from 550 × (100 ± 17%) Ω to 69550 × (100 ± 4.1%) Ω, with the ON/OFF ratio increasing significantly to 103. Consequently, this approach can effectively modulate memristive behaviors, indirectly suppressing the random generation of conductive channels. This is enlightening in constructing memristors with high stability and storage capacity.