Improvement in resistive switching of Ba-doped BiFeO3 films

Vagadia, Megha; Ravalia, Ashish; Solanki, P.S.; Choudhary, R. J.; Phase, D. M.; Kuberkar, D. G.

doi:10.1063/1.4813551

Cited by 55 publications

(25 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…So, in recent years, a series of interesting electrical properties have been extensively investigated. [8][9][10][11] Variations in the optical band gap and conductivity at domain walls was also observed in BFO films, 12 which indicates the possibility of stabilizing some conducting sates in these multiferroic materials. 7 Moreover, reversible resistive switching behaviors have been reported in epitaxial BFO thin films, BFO nano-islands, Ba doped BFO films, and so on.…”

Section: Introductionmentioning

confidence: 99%

Room temperature threshold switching behaviors of Bi_0.9Nd_0.1Fe_1−xCo_xO₃ nanoparticles

Zhang

Liu

et al. 2015

J. Mater. Chem. C

View full text Add to dashboard Cite

Many investigations have reported threshold switching (TS) effects in amorphous semiconductors, but it is rarely observed in BiFeO 3 nanoparticles. Here, the effects of cobalt doping on the electrical conductivity of Bi 0.9 Nd 0.1 Fe 1Àx Co x O 3 (x = 0, 0.01, 0.03, 0.05) nanoparticles were investigated. Leakage current density (J) versus applied voltage (V) curves were measured and it was found that the leakage current increases with increases of the cobalt dopant concentration. With the increase of the maximal applied voltage, the samples with cobalt doping exhibit nearly symmetric TS behaviors at room temperature. With the increase of cobalt dopant concentration, the optical band gap is decreased, and the smallest optical band gap value (B2.01 eV) is observed for the 3% Co doped BiFeO 3 sample. X-ray photoelectron spectroscopy of the samples shows that the cobalt dopant induces an enhancement of the oxygen vacancy concentration. Possible mechanisms for the threshold switching effects are discussed on the basis of a conductive filament model. The mobile charge carriers align to form conducting filaments when the threshold voltage (V TH ) is achieved, corresponding to the transition from a high-resistance state to a low-resistance state, and the rupture of the conductive path takes place when the applied voltage is decreased. The leakage current decreases dramatically and eventually returns to the initial high-resistance state.

show abstract

Section: Introductionmentioning

confidence: 99%

Room temperature threshold switching behaviors of Bi_0.9Nd_0.1Fe_1−xCo_xO₃ nanoparticles

Zhang

Liu

et al. 2015

J. Mater. Chem. C

View full text Add to dashboard Cite

show abstract

“…Doping the ferroelectric layer with appropriate elements is the simplest way to improve the RS performance of ferroelectric heterostructures. In BiFeO 3 /Nb:SrTiO 3 heterostructures, an optimal ON/OFF ratio of 2500 was achieved, and the switching voltage was reduced to 0.68 V by doping 20% Ba into the BiFeO 3 layer . The increase in ON/OFF ratio could be attributed to the increase of the oxygen vacancies in the Ba‐doped BiFeO 3 layer.…”

Section: Approaches To Improve Rs Propertiesmentioning

confidence: 99%

Resistive Switching Behavior in Ferroelectric Heterostructures

Wang

Bai

2019

Small

View full text Add to dashboard Cite

Resistive random‐access memory (RRAM) is a promising candidate for next‐generation nonvolatile random‐access memory protocols. The information storage in RRAM is realized by the resistive switching (RS) effect. The RS behavior of ferroelectric heterostructures is mainly controlled by polarization‐dominated and defect‐dominated mechanisms. Under certain conditions, these two mechanisms can have synergistic effects on RS behavior. Therefore, RS performance can be effectively improved by optimizing ferroelectricity, conductivity, and interfacial structures. Many methods have been studied to improve the RS performance of ferroelectric heterostructures. Typical approaches include doping elements into the ferroelectric layer, controlling the oxygen vacancy concentration and optimizing the thickness of the ferroelectric layer, and constructing an insertion layer at the interface. Here, the mechanism of RS behavior in ferroelectric heterostructures is briefly introduced, and the methods used to improve RS performance in recent years are summarized. Finally, existing problems in this field are identified, and future development trends are highlighted.

show abstract

“…5 BiFeO 3 (BFO) is a well known widely studied multiferroic, having large ferroelectric polarization ($ 100 lC/cm 2 ), magnetization ($ 1 l B /Fe), and resistive switching ($ 2500 on/off ratio) at room temperature and hence a suitable candidate for technological applications. [6][7][8] These three functionalities of BFO provide an opportunity to design novel BFO based multifunctional devices but its usefulness in device applications is hindered by factors, such as leakage current due to oxygen vacancies, weak magnetic behaviour due to inhomogeneous cycloidal spin spiral arrangement, Bi-volatility, high coercive field, etc. [9][10][11][12] To overcome one or more of these factors, studies have been reported, which focused on the synthesis of polycrystalline bulk and thin films of BFO forms using different methods or by iso-or aliovalent chemical doping at either Bi or Fe-sites.…”

mentioning

confidence: 99%

“…16 Moreover, naturally formed oxygen vacancies in divalent (Ca, Ba) doped BFO films are responsible for the resistive switching. 4,8 In order to understand the local electronic structure and strain state modification and various chemical states of constituent in the BFO films, X-ray based techniques, such as reciprocal space mapping (RSM) and Near-edge X-ray absorption Fine structure (NEXAFS) spectroscopy have been extensively used. NEXAFS is element sensitive technique, which provides information about local electronic structure of the materials including electronic state, charge transfer, type of bonding, and hybridization, while RSM gives knowledge about the strain state in the film.…”

mentioning

confidence: 99%

Role of defects in BiFeO3 multiferroic films and their local electronic structure by x-ray absorption spectroscopy

Ravalia

Vagadia

Solanki

et al. 2014

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Present study reports the role of defects in the electrical transport in BiFeO3 (BFO) multiferroic films and its local electronic structure investigated by near-edge X-ray absorption fine structure. Defects created by high energy 200 MeV Ag+15 ion irradiation with a fluence of ∼5 × 1011 ions/cm2 results in the increase in structural strain and reduction in the mobility of charge carriers and enhancement in resistive (I-V) and polarization (P-E) switching behaviour. At higher fluence of ∼5 × 1012 ions/cm2, there is a release in the structural strain due to local annealing effect, resulting in an increase in the mobility of charge carriers, which are released from oxygen vacancies and hence suppression in resistive and polarization switching. Near-edge X-ray absorption fine structure studies at Fe L3, 2- and O K-edges show a significant change in the spectral features suggesting the modifications in the local electronic structure responsible for changes in the intrinsic magnetic moment and electrical transport properties of BFO.

show abstract

Improvement in resistive switching of Ba-doped BiFeO3 films

Cited by 55 publications

References 23 publications

Room temperature threshold switching behaviors of Bi_0.9Nd_0.1Fe_1−xCo_xO₃ nanoparticles

Room temperature threshold switching behaviors of Bi_0.9Nd_0.1Fe_1−xCo_xO₃ nanoparticles

Resistive Switching Behavior in Ferroelectric Heterostructures

Role of defects in BiFeO3 multiferroic films and their local electronic structure by x-ray absorption spectroscopy

Contact Info

Product

Resources

About

Improvement in resistive switching of Ba-doped BiFeO3 films

Cited by 55 publications

References 23 publications

Room temperature threshold switching behaviors of Bi0.9Nd0.1Fe1−xCoxO3 nanoparticles

Room temperature threshold switching behaviors of Bi0.9Nd0.1Fe1−xCoxO3 nanoparticles

Resistive Switching Behavior in Ferroelectric Heterostructures

Role of defects in BiFeO3 multiferroic films and their local electronic structure by x-ray absorption spectroscopy

Contact Info

Product

Resources

About

Room temperature threshold switching behaviors of Bi_0.9Nd_0.1Fe_1−xCo_xO₃ nanoparticles

Room temperature threshold switching behaviors of Bi_0.9Nd_0.1Fe_1−xCo_xO₃ nanoparticles