Improvement in performance of solution-processed indium–zinc–tin oxide thin-film transistors by UV/O<sub>3</sub> treatment on zirconium oxide gate insulator

Naik, Bukke Ravindra; Avis, Christophe; Chowdhury, Delwar Hossain; Lin, Tengda; Jang, Jin

doi:10.7567/jjap.55.03cc02

Cited by 37 publications

(31 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The prepared TFTs were tested at room temperature by a semiconductor parameter analyzer to obtain output curves and transfer characteristic curves. The saturation mobility and subthreshold swing of the thin-film transistor device were calculated from Equations (2) and (3) [46]:…”

Section: Designed Ratios Of Zr:al 3:1 1:1 1:3mentioning

confidence: 99%

Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor

et al. 2020

View full text Add to dashboard Cite

In this paper, zirconium-aluminum-oxide (ZAO) dielectric layers were prepared by a solution method with intent to combine the high dielectric constant with a low leakage current density. As a result, dielectric layers with improved electrical properties as expected can be obtained by spin-coating the mixed precursor. The chemical and physical properties of the films were measured by thermogravimetric differential scanning calorimetry (TG-DSC), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and a UV spectrometer. It is observed that the oxygen defects and the hydroxide in the films are reduced with the addition of high-bond-energy zirconia, while the films can remain large optical bond gaps thanks to the presence of alumina. The metal-insulator-metal (MIM) devices were fabricated, and it was seen that with a molar ratio of Zr:Al = 3:1 and an annealing temperature of 500 • C, the dielectric layer afforded the highest dielectric constant of 21.1, as well as a relatively low leakage current of 2.5 × 10 −6 A/cm 2 @ 1 MV/cm. Furthermore, the indium-gallium-zinc oxide thin-film transistors (IGZO-TFTs) with an optimal ZAO dielectric layer were prepared by the solution method and a mobility of 14.89 cm 2 /Vs, and a threshold voltage swing of 0.11 V/dec and a 6.1 × 10 6 on/off ratio were achieved at an annealing temperature of 500 • C.

show abstract

Section: Designed Ratios Of Zr:al 3:1 1:1 1:3mentioning

confidence: 99%

Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor

et al. 2020

View full text Add to dashboard Cite

show abstract

“…Nonetheless, the I OFF remains in the 10 pA range suggesting that the number of holes remained small. Higher stability may be achieved via surface treatment such as UV treatment or plasma treatment [28,29].…”

Section: Resultsmentioning

confidence: 99%

Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors

2019

Self Cite

View full text Add to dashboard Cite

The limited choice of materials for large area electronics limits the expansion of applications. Polycrystalline silicon (poly-Si) and indium gallium zinc oxide (IGZO) lead to thin-film transistors (TFTs) with high field-effect mobilities (>10 cm2/Vs) and high current ON/OFF ratios (IOn/IOff > ~107). But they both require vacuum processing that needs high investments and maintenance costs. Also, IGZO is prone to the scarcity and price of Ga and In. Other oxide semiconductors require the use of at least two cations (commonly chosen among Ga, Sn, Zn, and In) in order to obtain the amorphous phase. To solve these problems, we demonstrated an amorphous oxide material made using one earth-abundant metal: amorphous tin oxide (a-SnOx). Through XPS, AFM, optical analysis, and Hall effect, we determined that a-SnOx is a transparent n-type oxide semiconductor, where the SnO2 phase is predominant over the SnO phase. Used as the active material in TFTs having a bottom-gate, top-contact structure, a high field-effect mobility of ~100 cm2/Vs and an IOn/IOff ratio of ~108 were achieved. The stability under 1 h of negative positive gate bias stress revealed a Vth shift smaller than 1 V.

show abstract

“…19,20 Therefore, solution processes, such as spray coating, ink-jet printing, and spin coating, are widely studied. [21][22][23][24][25][26][27][28][29][30] The high mobility TFT backplanes are required for the large area, high-resolution, and high frame-rate display. A high mobility amorphous M-O TFT over >10 cm 2 V À1 s À1 can be achieved by the solution process, [31][32][33] but its stability is a critical issue to be solved.…”

Section: Introductionmentioning

confidence: 99%

Gel-based precursors for the high-performance of n-channel GaInSnZnO and p-channel CuGaSnSO thin-film transistors

Bukke

Jang

2021

RSC Adv.

Self Cite

View full text Add to dashboard Cite

show abstract

Improvement in performance of solution-processed indium–zinc–tin oxide thin-film transistors by UV/O₃ treatment on zirconium oxide gate insulator

Cited by 37 publications

References 31 publications

Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor

Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor

Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors

Gel-based precursors for the high-performance of n-channel GaInSnZnO and p-channel CuGaSnSO thin-film transistors

Contact Info

Product

Resources

About

Improvement in performance of solution-processed indium–zinc–tin oxide thin-film transistors by UV/O3 treatment on zirconium oxide gate insulator

Cited by 37 publications

References 31 publications

Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor

Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor

Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors

Gel-based precursors for the high-performance of n-channel GaInSnZnO and p-channel CuGaSnSO thin-film transistors

Contact Info

Product

Resources

About

Improvement in performance of solution-processed indium–zinc–tin oxide thin-film transistors by UV/O₃ treatment on zirconium oxide gate insulator