“…Compared with pure ZnO sensors, the 7 at% Sn-doped ZnO sensors had a fast response and recovery time. B. L. Zhu et al also researched the gas sensor of thick film ZnO, however, the response and recovery time was around 10 and 5 s, respectively, at operating temperature>320°C 15 . We also observed that the initial output voltage (Vout) of sensor C was higher than sensor D, which indicated that the resistance of C is lower than D. As is known to us all, Sn atoms can rearrange themselves into more suitable positions during the annealing process, which had been identified by the XRD spectra, and generate a new dopant energy below the conduction band of ZnO 11 .…”