Improvement in epitaxial quality of selectively grown Si1−xGex layers with low pattern sensitivity for CMOS applications

Radamson, Henry H.; Hållstedt, Julius; Suvar, Erdal; Menon, C.; Östling, Mikael

doi:10.1016/j.mssp.2004.09.076

Cited by 8 publications

(5 citation statements)

References 16 publications

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“…There are different models to design the chip layout in order to control the pattern dependency. These designs compensate for the exposed Si variations by introducing dummy openings [ 23 , 24 , 25 , 26 , 27 ].…”

Section: Introductionmentioning

confidence: 99%

Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate

Wang

et al. 2022

Materials

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In this manuscript, a novel dual-step selective epitaxy growth (SEG) of Ge was proposed to significantly decrease the defect density and to create fully strained relaxed Ge on a Si substrate. With the single-step SEG of Ge, the threading defect density (TDD) was successfully decreased from 2.9 × 107 cm−2 in a globally grown Ge layer to 3.2 × 105 cm−2 for a single-step SEG and to 2.84 × 105 cm−2 for the dual-step SEG of the Ge layer. This means that by introducing a single SEG step, the defect density could be reduced by two orders of magnitude, but this reduction could be further decreased by only 11.3% by introducing the second SEG step. The final root mean square (RMS) of the surface roughness was 0.64 nm. The strain has also been modulated along the cross-section of the sample. Tensile strain appears in the first global Ge layer, compressive strain in the single-step Ge layer and fully strain relaxation in the dual-step Ge layer. The material characterization was locally performed at different points by high resolution transmission electron microscopy, while it was globally performed by high resolution X-ray diffraction and photoluminescence.

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Section: Introductionmentioning

confidence: 99%

Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate

Wang

et al. 2022

Materials

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“…Non-uniformity of epi-deposition will also cause differences from wafer to wafer as chip design or the architecture (oxide or nitride with a specific thickness) changes (3). Many studies have explored methods to improve layer profile uniformity over a wafer (4)(5)(6)(7).…”

Section: Introductionmentioning

confidence: 99%

Selective Growth of B- and C-doped SiGe Layers in Unprocessed and Recessed Si Openings for pMOSFET Application

Kolahdouz

Adibi²,

Farniya³

et al. 2009

ECS Trans.

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This work presents pattern dependency of selective epitaxial growth of boron- or carbon-doped SiGe layers in recessed or unprocessed openings. The layer profile and quality of epi-layers were found to be dependent on chip layout and the growth parameters. Carbon- and boron-doping compensated the strain in SiGe layers and when both dopants are introduced the strain reduction was additive. The incorporation of boron and carbon in SiGe matrix showed to be a competitive action. The concentration of carbon decreased when the boron amount increased in SiGe layers with higher Ge content

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“…No matter which Si source was used, it is widely reported that there is a difference between epitaxial SiGe growth rates on patterned and blanket wafers. [2][3][4][5][6][7][8][9] The loading effect depends on the Si/dielectrics filling ratio ͑global effect͒ and the opening size of the windows ͑local effect͒. Reducing the total pressure or increasing HCl flow has been found to improve loading performance.…”

mentioning

confidence: 99%

“…[2][3][4] Previous studies, however, have focused on structures larger than 0.1 m 2 . [2][3][4][5][6][7][8][9] Advanced Si technologies usually involve active areas less than 0.01 m 2 , which pushes the previously termed "local effect" into more like a "global effect." In this paper we discuss the selective growth behavior of SiGe using SiH 4 and DCS as Si sources, with an emphasis on the growth rate on Si͑001͒ with different active area sizes down to 0.01 m 2 .…”

mentioning

confidence: 99%

“…[5][6][7][8][9] The thermal effect depends mostly on the emissivity of the patterned wafers, 5 whereas the chemical effect is mostly due to the different behavior of adsorbed species on both Si active area as well as surrounding dielectrics-covered areas ͑field areas͒. [6][7][8][9] The different loading effect observed in the process using different Si sources is due to the chemical effect, as the temperature variation across the different active sizes are independent of the Si source chemical. Furthermore, the surface reaction mechanism for selective SiGe deposition using HCl at temperatures below 750°C are also independent of the Si source chemical, as we will show in the following.…”

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confidence: 99%

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Loading Effect of Selective Epitaxial Growth of Silicon Germanium in Submicrometer-Scale Silicon (001) Windows

Liu

Chew

See

et al. 2009

Electrochem. Solid-State Lett.

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We report different loading effects in selective epitaxial deposition of silicon germanium on silicon ͑001͒ using different silicon sources, such as silane or dichlorosilane, and other conventional sources, such as germane, and hydrogen chloride in hydrogen carrier gas, in a low-pressure chemical vapor deposition system. Silane leads to lower relative deposition rates in a smaller silicon area, while dichlorosilane shows the opposite trend. Flowing silane and dichlorosilane simultaneously during deposition results in a similar deposition rate independent of exposed silicon area. Decreasing hydrogen chloride partial pressure is found to improve the loading effect for both the silane-and dichlorosilane-based process for a small active window of about 0.01 m 2 . The results point to the importance of availability of the adsorbed species on the active silicon windows when their size is below 0.04 m 2 .The selective epitaxial growth of SiGe has been used in volume production of mainstream complementary metal-oxide semiconductor products 1 following the introduction of SiGe heterojunction bipolar transistor technologies. For productivity improvement in manufacturing advanced Si technology, higher growth rate and less dependence of the growth rate on the exposed Si active size are ideal. Dichlorosilane ͑DCS͒ has been the Si source of choice for selective growth, but more chemically active sources, such as SiH 4 , Si 2 H 6 , or Si 3 H 8 , have been considered for growth rate improvements. No matter which Si source was used, it is widely reported that there is a difference between epitaxial SiGe growth rates on patterned and blanket wafers. [2][3][4][5][6][7][8][9] The loading effect depends on the Si/dielectrics filling ratio ͑global effect͒ and the opening size of the windows ͑local effect͒. Reducing the total pressure or increasing HCl flow has been found to improve loading performance. 2-4 Previous studies, however, have focused on structures larger than 0.1 m 2 . 2-9 Advanced Si technologies usually involve active areas less than 0.01 m 2 , which pushes the previously termed "local effect" into more like a "global effect." In this paper we discuss the selective growth behavior of SiGe using SiH 4 and DCS as Si sources, with an emphasis on the growth rate on Si͑001͒ with different active area sizes down to 0.01 m 2 .The SiGe layers were grown in a commercially available lowpressure chemical vapor deposition ͑LPCVD͒ system using different Si sources, SiH 4 or DCS and other conventional sources, such as GeH 4 or HCl in H 2 carrier gas. Blanket and patterned wafers with exposed Si areas of different sizes ranging from 0.01 to 3600 m 2 were used. Thickness and Ge composition were measured by X-ray diffraction ͑XRD͒ for SiGe grown on active area. Cross-sectional transmission electron microscopy ͑TEM͒ was used to verify thickness measurements. All data were collected on the same die location on 300 mm wafers. Figure 1 shows the normalized deposition rate vs the Si area for different selective processes with different Si sou...

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Improvement in epitaxial quality of selectively grown Si1−xGex layers with low pattern sensitivity for CMOS applications

Cited by 8 publications

References 16 publications

Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate

Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate

Selective Growth of B- and C-doped SiGe Layers in Unprocessed and Recessed Si Openings for pMOSFET Application

Loading Effect of Selective Epitaxial Growth of Silicon Germanium in Submicrometer-Scale Silicon (001) Windows

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