Improvement in efficiency of yellow Light Emitting Diode using InGaN barriers and modified electron injection layer

Ahmad, Shameem; Kumar, Shalendra; Kaya, Savaş; Alvi, P. A.; Siddiqui, M. J.

doi:10.1016/j.ijleo.2019.163716

Cited by 13 publications

(4 citation statements)

References 22 publications

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“…The change in carrier concentration reveals that the working mechanism of NEC&NCI-LED is completely different from traditional LED. As is well known, the number of carriers in the MQW affects EL intensity [ 38 ]. Thus, the change in the carrier concentration in the MQW is furthered studied, as shown in Figure 7 a–d.…”

Section: Resultsmentioning

confidence: 99%

Working Mechanisms of Nanoscale Light-Emitting Diodes Operating in Non-Electrical Contact and Non-Carrier Injection Mode: Modeling and Simulation

Wang

et al. 2022

Nanomaterials

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Non-electrical contact and non-carrier injection (NEC&NCI) mode is an emerging driving mode for nanoscale light-emitting diodes (LEDs), aiming for applications in nano-pixel light-emitting displays (NLEDs). However, the working mechanism of nano-LED operating in NEC&NCI mode is not clear yet. In particular, the questions comes down to how the inherent holes and electrons in the LED can support sufficient radiation recombination, which lacks a direct physical picture. In this work, a finite element simulation was used to study the working process of the nano-LED operating in the NEC&NCI mode to explore the working mechanisms. The energy band variation, carrier concentration redistribution, emission rate, emission spectrum, and current-voltage characteristics are studied. Moreover, the effect of the thickness of insulating layer that plays a key role on device performance is demonstrated. We believe this work can provide simulation guidance for a follow-up study of NEC&NCI-LED.

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Section: Resultsmentioning

confidence: 99%

Working Mechanisms of Nanoscale Light-Emitting Diodes Operating in Non-Electrical Contact and Non-Carrier Injection Mode: Modeling and Simulation

Wang

et al. 2022

Nanomaterials

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“…The electrons and holes mobility are set as 100 cm 2 V −1 s −1 and 10 cm 2 V −1 s −1 , respectively. The energy band offset ratio between the conduction band and valence band is 70/30 [ 30 ]. The non-radiative recombination lifetime is assumed to be 1 ns and the ratio of recombination to non-radiative recombination lifetime determines the IQE of LEDs [ 31 , 32 , 33 ].…”

Section: Device Structures and Parametersmentioning

confidence: 99%

In-Composition Graded Quantum Barriers for Polarization Manipulation in InGaN-Based Yellow Light-Emitting Diodes

et al. 2022

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Highly efficient indium gallium nitride (InGaN)-based yellow light-emitting diodes (LEDs) with low efficiency droop have always been pursued for next-generation displays and lighting products. In this work, we report an InGaN quantum barrier (QB) with linear-increase In-composition along [0001] direction for InGaN-based yellow LEDs. With the In-composition in QBs systematically engineered, three QB structures including linear-increase QB (LIQB), linear-decrease QB (LDQB) and commonly used flat QB (FQB) were investigated by simulation. The results show that the LIQB not only yields enhanced electron confinement, but also contributes to suppressed polarization field. Consequently, the yellow LED incorporated with LIQBs demonstrates improved radiative recombination rates and the efficiency droop is alleviated. Under a current density of 100 A/cm2, the efficiency droop ratios of LEDs with FQBs, LDQBs and LIQBs are 58.7%, 62.2% and 51.5%, respectively. When current density varies from 1 A/cm2 to 60 A/cm2, the blueshift values of peak emission wavelength for LEDs with FQBs, LDQBs and LIQBs are 14.4 nm, 16.5 nm and 13.0 nm, respectively. This work is believed to provide a feasible solution for high-performance InGaN-based LEDs in long-wavelength spectral region.

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“…On the other hand, researchers are also deepening their research on the relevant physical mechanisms involved in the long-wavelength (yellow) GaN-based LEDs. For example, some have reported that Auger recombination is the main reason for the enhanced droop effect of yellow LEDs under high current [ 14 ], while some others explored the reasons which are responsible for the improved luminescence efficiency of yellow GaN-based LEDs by using InGaN barriers and modified electron injection layers [ 15 ].…”

Section: Introductionmentioning

confidence: 99%

A Simulation Study of Carrier Capture Ability of the Last InGaN Quantum Well with Different Indium Content for Yellow-Light-Emitting InGaN/GaN Multiple Quantum Wells

Liu,

Zhao

et al. 2023

Micromachines

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Currently, GaN-based blue- and green-light-emitting devices have achieved successful applications in practice, while the luminescence efficiency of devices with longer wavelengths (such as yellow light) is still very low. Therefore, in this paper, the electroluminescence characterization of yellow-light-emitting InGaN/GaN multiple quantum wells (MQWs) with different In content in the last InGaN quantum well, which is next to the p-type GaN electrode layer, are investigated numerically to reveal a possible physical mechanism by which the different distribution of In content in the active region impacts the carrier capture and the light emission process in yellow InGaN/GaN MQWs. The simulation results show that at low injection currents, the luminescence efficiency of high-In-content yellow MQWs is enhanced, which can be ascribed to the enhanced radiative recombination process induced by the increased carrier concentration in the last InGaN quantum wells with promoted carrier capture ability. However, in the case of high injection condition, the luminescence efficiency of yellow MQWs deteriorates with increasing In content, i.e., the droop effect becomes remarkable. This can be ascribed to both significantly enhanced Auger recombination and electron leakage in the last InGaN quantum well, induced also by the promoted capture ability of charge carriers.

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Improvement in efficiency of yellow Light Emitting Diode using InGaN barriers and modified electron injection layer

Cited by 13 publications

References 22 publications

Working Mechanisms of Nanoscale Light-Emitting Diodes Operating in Non-Electrical Contact and Non-Carrier Injection Mode: Modeling and Simulation

Working Mechanisms of Nanoscale Light-Emitting Diodes Operating in Non-Electrical Contact and Non-Carrier Injection Mode: Modeling and Simulation

In-Composition Graded Quantum Barriers for Polarization Manipulation in InGaN-Based Yellow Light-Emitting Diodes

A Simulation Study of Carrier Capture Ability of the Last InGaN Quantum Well with Different Indium Content for Yellow-Light-Emitting InGaN/GaN Multiple Quantum Wells

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