Abstract:The first-principles calculations show that band convergence can be achieved by decreasing the interlayer distance of bilayer Bi2O2Se, which is beneficial to improve its thermoelectric performance.
“…where h, k B , m*, C, and E 1 are the Planck constant, Boltzmann constant, effective mass, elastic constant, and DP constant, respectively. For the electronic thermal conductivity κ e , in this study, it is obtained using the Wiedemann-Franz law, that is, κ e LσT (Jonson and Mahan, 1980) Besides, κ e can also be obtained directly from the BoltzTraP2 code, that is, κ e κ 0 − TσS 2 (Madsen et al, 2018) A recent study put forward that the results which were obtained from the output of BoltzTraP and from using the Wiedemann-Franz law agree very well with each other (Li M. et al, 2019).…”
Section: Computational Detailsmentioning
confidence: 56%
“…Therefore, some methods like doping (Liu et al, 2008), alloying (Row et al, 1981), and nanostructuring (Yuan et al, 2018) were reported to enhance the ZT value. Except for these approaches, screening new TE materials is also an effective strategy to improve the ZT value via experimental research (Nielsen et al, 2013;Tang et al, 2015;Li et al, 2018) and theoretical predictions [such as first-principles calculations (Wang et al, 2017;Ouyang et al, 2018) and high-throughput computations (Chen et al, 2016;Li M. et al, 2019;Li R. et al, 2019;Ortiz et al, 2019)].…”
Electronic fitness function (EFF, achieved by the electrical transport properties) as a new quantity to estimate thermoelectric (TE) performance of semiconductor crystals is usually used for screening novel TE materials. In recent years, because of the high EFF values, an increasing number of two-dimensional materials have been predicted to have the potential for TE applications via high-throughput calculations. Among them, the GeS2 monolayer has many interesting physical properties and is being used for industrial applications. Hence, in this work, we systematically investigated the TE performance, including both electronic and thermal transport properties, of the GeS2 monolayer with first-principles calculations. The results show that the structure of the GeS2 monolayer at 700 K is thermally unstable, so we study its TE performance only at 300 and 500 K. As compared with other typical TE monolayers, the GeS2 monolayer exhibits excellent electronic transport properties but a relatively high lattice thermal conductivity of 5.71 W m−1 K−1 at 500 K, and thus an unsatisfactory ZT value of 0.23. Such a low ZT value indicates that it is necessary to consider not only the electron transport properties but also the thermal transport properties to screen the thermoelectric materials with excellent performance through high-throughput calculations.
“…where h, k B , m*, C, and E 1 are the Planck constant, Boltzmann constant, effective mass, elastic constant, and DP constant, respectively. For the electronic thermal conductivity κ e , in this study, it is obtained using the Wiedemann-Franz law, that is, κ e LσT (Jonson and Mahan, 1980) Besides, κ e can also be obtained directly from the BoltzTraP2 code, that is, κ e κ 0 − TσS 2 (Madsen et al, 2018) A recent study put forward that the results which were obtained from the output of BoltzTraP and from using the Wiedemann-Franz law agree very well with each other (Li M. et al, 2019).…”
Section: Computational Detailsmentioning
confidence: 56%
“…Therefore, some methods like doping (Liu et al, 2008), alloying (Row et al, 1981), and nanostructuring (Yuan et al, 2018) were reported to enhance the ZT value. Except for these approaches, screening new TE materials is also an effective strategy to improve the ZT value via experimental research (Nielsen et al, 2013;Tang et al, 2015;Li et al, 2018) and theoretical predictions [such as first-principles calculations (Wang et al, 2017;Ouyang et al, 2018) and high-throughput computations (Chen et al, 2016;Li M. et al, 2019;Li R. et al, 2019;Ortiz et al, 2019)].…”
Electronic fitness function (EFF, achieved by the electrical transport properties) as a new quantity to estimate thermoelectric (TE) performance of semiconductor crystals is usually used for screening novel TE materials. In recent years, because of the high EFF values, an increasing number of two-dimensional materials have been predicted to have the potential for TE applications via high-throughput calculations. Among them, the GeS2 monolayer has many interesting physical properties and is being used for industrial applications. Hence, in this work, we systematically investigated the TE performance, including both electronic and thermal transport properties, of the GeS2 monolayer with first-principles calculations. The results show that the structure of the GeS2 monolayer at 700 K is thermally unstable, so we study its TE performance only at 300 and 500 K. As compared with other typical TE monolayers, the GeS2 monolayer exhibits excellent electronic transport properties but a relatively high lattice thermal conductivity of 5.71 W m−1 K−1 at 500 K, and thus an unsatisfactory ZT value of 0.23. Such a low ZT value indicates that it is necessary to consider not only the electron transport properties but also the thermal transport properties to screen the thermoelectric materials with excellent performance through high-throughput calculations.
“…The maximum PF value (∼5.745 m W mK −2 at 300 K) of pentagonal NiTe 2 monolayer is considerably higher than that of the thermoelectric material SnSe (∼0.250 m W mK −2 at 300 K) with the cubic ( Fm 3̄ m ) phase at room temperature. 79 Similar to the bilayer Bi 2 O 2 Se (∼9.000 m W mK −2 at 300 K), 80 the pentagonal NiTe 2 monolayer could be a promising thermoelectric material with high performance.…”
Pentagonal compounds, as a new family of 2D materials, have recently been extensively studied in the fields of electrocatalysis, photovoltaics, and thermoelectrics. Encouraged by the successful synthesis of pentagonal PdSe2,...
“…zT of 0.3 at 3000 K was obtained in rGO experimentally and Seebeck coefficient can be improved by N or B doping 222‐224 . Other oxides, such as Bi 2 O 2 Se nanosheet, 2D Bi 2 O 2 S thin film and phosphorene oxide, have excellent predicted thermoelectric performance but little experimental work has been carried out so far 29,225‐229 . Stacking 2D layers or forming heterostructures is another way to enhance properties by combining the advantages of components; however, the present studies are mainly in theoretical research, such as graphene/black phosphorous/graphene, BiSb/AlN, graphene/Sb 2 Te 3 and Bi‐Sb/Co 203,230‐232 with the predicted values of zT around 2–3.…”
Section: Thermoelectric Performance Of Iva and Va Xenesmentioning
Emerging Xenes, mostly group IVA and VA elemental two-dimensional (2D) materials, have small and tunable band gaps between graphene and transition metal dichalcogenides, giving versatile electrical properties. While their microelectronic or optoelectronic properties are being extensively explored, there remains a lack of study on Xenes' uniquely advantageous thermoelectric performance. This review highlights state-of-the-art experimental and theoretical progress in the thermoelectric effect and devices of IVA and VA Xenes. Vertically displaced, a.k.a. "buckled" or "puckered," atomic arrays result in exotic and tunable electrical or thermal transport behaviors. Different from chemical doping strategies usually employed in bulk thermoelectric materials, 2D Xenes can be tuned by physical means, such as atomic layer control and quantum confinement effects. A precise and compatible platform for 2D thermoelectric effect and devices study is available via the engagement between micro/nanofabrication of 2D Xene transistors and thermal property measurement techniques. This review also reveals potential thermoelectric applications of Xenes and their compounds (Bi 2 Te 3 , Bi 2 Se 3 , etc.), such as accurate stretchable temperature sensors, fast terahertz photodetectors, and so on.
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