2012
DOI: 10.1016/j.jnoncrysol.2012.03.021
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Improved thermal stability in organic FET fabricated with a soluble BTBT derivative

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Cited by 60 publications
(37 citation statements)
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“…2, there are parallel cracks in these films. It is interesting to note that similar cracks are reported in the films of liquid crystalline semiconductors prepared by spin-coating at elevated temperatures [23,24]. In Fig.…”
Section: Charactsupporting
confidence: 77%
“…2, there are parallel cracks in these films. It is interesting to note that similar cracks are reported in the films of liquid crystalline semiconductors prepared by spin-coating at elevated temperatures [23,24]. In Fig.…”
Section: Charactsupporting
confidence: 77%
“…The FET mobility values exhibit little change and remain above 10 cm 2 V −1 s −1 up to 140 °C, and a value of 2.6 cm 2 V −1 s −1 is obtained even after thermal stress is applied at 200 °C for 5 min. In contrast, the mobility in FETs fabricated with polycrystalline thin films of 2,7-didecylbenzothienobenzothiophene (10-BTBT-10) abruptly decreases after thermal stress is applied above 100 °C, at which temperature the crystal film was observed to melt into droplets due to the phase transition to a liquid-like, less-ordered phase of SmA and the FETs ceased to function 25 26 .…”
Section: Resultsmentioning
confidence: 99%
“…The FET fabricated with 8-Tp-BTBT can be operated well even after undergoing thermal stress at 150°C for 5 min, whereas the FET from C 10 -BTBT is substantially degraded because the C 10 -BTBT is melted, as shown in Figure 6b. 34,35 A novel smectic liquid crystalline OFET material, Ph-BTBT-10 Taking account of the advantages of highly ordered smectic liquid crystals for OFET materials discussed in the previous sections, Ph-BTBT-10 was designed and synthesized to demonstrate its high potential as a soluble OFET material, as shown in Figure 7a. Ph-BTBT-10 shows a narrow solubility of 2 g l − 1 in toluene at 20°C for solution processes and exhibits a SmE phase from 142 to 210°C in the heating process and from 210 to 98°C in the cooling process.…”
Section: Liquid Crystalline Semiconductors For Ofets H Iino and J Hannamentioning
confidence: 99%