Improved temperature performance of 1.31-/spl mu/m quantum dot lasers by optimized ridge waveguide design

Abstract

Article:Ray, S.K., Groom, K.M., Hogg, R.A. et al. (5 more ReuseUnless indicated otherwise, fulltext items are protected by copyright with all rights reserved. The copyright exception in section 29 of the Copyright, Designs and Patents Act 1988 allows the making of a single copy solely for the purpose of non-commercial research or private study within the limits of fair dealing. The publisher or other rights-holder may allow further reproduction and re-use of this version -refer to the White Rose Research Online record for this item. Where records identify the publisher as the copyright holder, users can verify any specific terms of use on the publisher's website. TakedownIf you consider content in White Rose Research Online to be in breach of UK law, please notify us by emailing eprints@whiterose.ac.uk including the URL of the record and the reason for the withdrawal request. Index Terms-Dot-in-well (DWELL), quantum dots (QDs).

Design, growth, fabrication, and characterization of InAs∕GaAs 1.3μm quantum dot broadband superluminescent light emitting diode

“…Figure 6 plots the peak wavelength of the lasing spectrum at 1.1J th for both devices as a function of the device length. 19 For these 5 m wide ridges, a greater internal loss is expected, and as a result the switching takes place at longer cavity lengths. This phenomenon indicates the switching of the laser emission from the ground state to the excited state.…”

Geometrical Effects on Characteristic Temperature and Modal Gain of InAs/GaAs Quantum-Dot Lasers

“…Researchers have proposed several methods to further improve the performance of QD lasers, such as modulation doping in QD layers [3]- [6], tunneling injection structures [7], dots-in-a-well (DWELL) structures [8], etc. Within the various investigations on QD lasers, there has been only little effort put into studying the geometrical effects on laser performance [9]. It has been shown that the ridge height, which is controlled by the etch depth during fabrication, is an important parameter for lateral spreading current to achieve low threshold current in quantum well (QW) ridge waveguide lasers [10]- [12].…”

“…Hence, the laser with of m needs larger injection current to lase. However, if the laser ridge is too high m , the sidewall area of the ridge will be large, which will lead to high carrier loss due to interface recombination [9], [12]. Therefore, the laser with of m exhibits larger than the laser with of m. In term of characteristic temperature, the laser with of m has an almost infinite from C to C and operates up to C, while the laser with of m only operates below C and exhibits relatively lower of 325 K from C to C. This could be explained by the temperature dependent behavior of the current spreading characteristics.…”

Opposite temperature effects of quantum-dot laser under dual-wavelength operation

“…[1][2][3][4][5][6] The slope efficiency and the output power decrease. [7][8][9] In addition, the laser gain profile shifts to higher energy levels. 7,10 These phenomena are due to the movement of carriers to higher energy levels.…”

“…[7][8][9] In addition, the laser gain profile shifts to higher energy levels. 7,10 These phenomena are due to the movement of carriers to higher energy levels. 10 Previous researches on temperature dependence of L-I curves of QD lasers are under singlewavelength operation.…”