Improved Switching Stability and the Effect of an Internal Series Resistor in HfO<sub>2</sub>/TiO<sub>&lt;italic&gt;x&lt;/italic&gt;</sub> Bilayer ReRAM Cells

Hardtdegen, Alexander; Torre, Camilla La; Cüppers, Felix; Menzel, Stephan; Waser, Rainer; Hoffmann‐Eifert, Susanne

doi:10.1109/ted.2018.2849872

Cited by 109 publications

(83 citation statements)

References 22 publications

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“…The self-compliance may occur by the TiON buffer layer or the oxygen reservoir layer acting as series resistance. The similar studies presenting self-compliance in filamentary switching type were reported [ 41 , 42 , 43 , 44 , 45 ]. The self-compliance mode that is close to the actual device operation (pulse switching) has the advantage of reducing the circuits related to current limiting.…”

Section: Resultssupporting

confidence: 70%

Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN Stack

Ryu

Kim

2020

Nanomaterials

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In this work, we propose three types of resistive switching behaviors by controlling operation conditions. We confirmed well-known filamentary switching in Al2O3-based resistive switching memory using the conventional device working operation with a forming process. Here, filamentary switching can be classified into two types depending on the compliance current. On top of that, the homogeneous switching is obtained by using a negative differential resistance effect before the forming or setting process in a negative bias. The variations of the low-resistance and high-resistance states in the homogeneous switching are comparable to the filamentary switching cases. However, the drift characteristics of the low-resistance and high-resistance states in the homogeneous switching are unstable with time. Therefore, the short-term plasticity effects, such as the current decay in repeated pulses and paired pulses facilitation, are demonstrated when using the resistance drift characteristics. Finally, the conductance can be increased and decreased by 50 consecutive potentiation pulses and 50 consecutive depression pulses, respectively. The linear conductance update in homogeneous switching is achieved compared to the filamentary switching, which ensures the high pattern-recognition accuracy.

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Section: Resultssupporting

confidence: 70%

Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN Stack

Ryu

Kim

2020

Nanomaterials

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“…It is worth to note that V SET , V RESET , R ON , R OFF , and σ / µ ratio values obtained for cell array are in the same range as those values obtained from a single device . This demonstrates the stable and promising performance of the devices in this work for memory applications.…”

supporting

confidence: 71%

“…Also, the V RESET decreased with the decreasing compliance current. According to the previous report, such behavior indicates the presence of an internal series resistor with a resistance value of the same order of magnitude as the resistance of the ON state memory. In this case, the series resistance limits the current during SET events and acts as a voltage divider during RESET.…”

mentioning

confidence: 73%

Atomic Layer Deposited Oxygen‐Deficient TaO_x Layers for Electroforming‐Free and Reliable Resistance Switching Memory

Kuzmichev

Lebedinskiǐ

Hwang

et al. 2018

Physica Rapid Research Ltrs

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Oxygen‐deficient TaOx layers are grown by a radical‐enhanced atomic layer deposition (REALD) process on a chemically active bottom electrode (Ta) to create electroforming‐free resistance switching random access memory (ReRAM) cells. When the top electrode is Pt, the Ta/TaOx/Pt device shows a completely electroforming‐free behavior with a pulse‐switching induced endurance cycle of up to 6 × 106 cycles. This is due to the abundantly present oxygen vacancies within the TaOx layer, which eliminate the need to create further oxygen vacancies during the electroforming cycles in other types of oxide‐based ReRAM cells. The adoption of the Pt top electrode contributes to the suppression of the leakage current, making the switching reliable. When the top electrode is changed to the more production‐compatible Ru, which is also grown by another REALD, the devices show very mild electroforming behavior with an increased leakage current. Due to these slight decreases in the electrical performance, the switching endurance can be confirmed only up to 6 × 104 cycles with the help of an incremental step pulse programming technique.

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“…1e. The gradual set transition does not necessarily have to originate from the internal series resistances, it may also be caused by external series resistances 33,36,37 . It is most essential that R S is independent of the applied voltage.…”

Section: Resultsmentioning

confidence: 99%

Picosecond multilevel resistive switching in tantalum oxide thin films

Böttger

Witzleben

Havel

et al. 2020

Sci Rep

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The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in one cell. A promising candidate is the redox-based resistive switch repositing the information in form of different resistance states. For reliable programming, the underlying physical parameters need to be understood. We reveal that the programmable resistance states are linked to internal series resistances and the fundamental nonlinear switching kinetics. The switching kinetics of $$\hbox {Ta}_2 \hbox {O}_5$$ Ta 2 O 5 -based cells was investigated in a wide range over 15 orders of magnitude from 10$$^5$$ 5 s to 250 ps. The capacitive charging time of our device limits the direct observation of the set time below 770 ps, however, we found indication for an intrinsic switching speed of 10 ps at a stimulus of 3 V. On all time scales, multi-bit data storage capabilities were demonstrated. The elucidated link between fundamental material properties and multi-bit data storage paves the way for designing resistive switches for memory and neuromorphic applications.

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Improved Switching Stability and the Effect of an Internal Series Resistor in HfO₂/TiO_{<italic>x</italic>} Bilayer ReRAM Cells

Cited by 109 publications

References 22 publications

Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN Stack

Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN Stack

Atomic Layer Deposited Oxygen‐Deficient TaO_x Layers for Electroforming‐Free and Reliable Resistance Switching Memory

Picosecond multilevel resistive switching in tantalum oxide thin films

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Improved Switching Stability and the Effect of an Internal Series Resistor in HfO2/TiO<italic>x</italic> Bilayer ReRAM Cells

Cited by 109 publications

References 22 publications

Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN Stack

Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN Stack

Atomic Layer Deposited Oxygen‐Deficient TaOx Layers for Electroforming‐Free and Reliable Resistance Switching Memory

Picosecond multilevel resistive switching in tantalum oxide thin films

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Product

Resources

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Improved Switching Stability and the Effect of an Internal Series Resistor in HfO₂/TiO_{<italic>x</italic>} Bilayer ReRAM Cells

Atomic Layer Deposited Oxygen‐Deficient TaO_x Layers for Electroforming‐Free and Reliable Resistance Switching Memory