Abstract:Over the last three years, a number of improvements have been made in the design of SGDBR lasers with integrated componentry. Device design has improved the output power and tuning range due to an increase in the number of quantum wells in the active region from four to six. Devices with up to 8 mW of output power with integrated amplifiers and buried heterostructure devices with 72 nm tuning ranges were realized. Current laser results indicate that leakage current in buried heterostructure lasers is a major f… Show more
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