Abstract:In this work, improved RF power performance of InAlN/GaN HEMT is achieved by optimizing rapid thermal annealing (RTA) process for high performance low voltage terminal applications. By optimizing the RTA temperature and time, the optimal annealing condition is found to enable low parasitic resistance and thus high performance device. Besides, comparing with the non-optimized RTA HEMT, the optimized one demonstrates smoother ohmic metal surface morphology and better heterojunction quality including the less deg… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.