Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications

Simulation modelling of III‐Nitride / β ‐Ga 2 O 3 Nano‐HEMT for microwave and millimetre wave applications

“…The Poisson equation describes the relationship between electric field (E) and space charge density (ρ), as follows. 34,35…”

Design of GaN/AlGaN Heterojunction High Electron Mobility Transistor with Back Gate and Intrisnic Spacer Layer

“…GaN Lg=100 µm, gm = 266.67 mS/mm, fT=47 GHz, fmax=81 GHz [22] GaN/AlN HEMT ‫جداکننده‬ ‫اليه‬ GaN Lg=150 nm, fT=56 GHz, fmax=130 GHz Lg=15 nm, gm = 201 mS/mm [23] GaN/AlGaN HEMT ‫اليه‬ ‫جداکننده‬ AlN Lg=30 nm, fT=210 GHz Lg=130 nm, fT=95.76 GHz Lg=150 nm, fT=83 GHz Lg=30 nm, fT=275 GHz, fmax=16 GHz [24] Discrete Field Plate AlGaN/GaN HEMT ‫جداکننده‬ ‫اليه‬ AlGaN Lg=800 nm, gm = 270 mS/mm, fT=20 GHz [25] p-GaN AlGaN/GaN HEMT ‫جداکننده‬ ‫اليه‬ AlGaN Lg=250 nm, gm = 330 mS/mm, fT=45 GHz [26] ‫جداکننده‬ ‫اليه‬…”

Investigation of SiN x and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

“…The gate length (L G ), gateto-source distance (L GS ), and gate-to-drain (L GD ) distance are 1.5 µm, 1 µm, and 5 µm, respectively. Fully ionized acceptors with a concentration of 5 × 10 16 cm −3 are assumed in GaN buffer layer for correct pinch-off behavior and simultaneously eliminate buffer trapping associated current collapse [20]. Interface fixed charges with a sheet density of 1.2 × 10 13 cm −2 but opposite signs are placed at GaN-cap/Al 0.25 Ga 0.75 N and Al 0.25 Ga 0.75 N/GaN interfaces representing spontaneous and piezoelectric polarization effect in the heterojunction structure.…”