Improved resistive switching behavior of multiwalled carbon nanotube/TiO2 nanorods composite film by increased oxygen vacancy reservoir

Mullani, Navaj B.; Ali, Ijaz; Dongale, Tukaram D.; Kim, Gon−Ho; Choi, Byung Joon; Basit, Muhammad Abdul; Park, Tae Joo

doi:10.1016/j.mssp.2019.104907

Cited by 25 publications

(18 citation statements)

References 33 publications

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“…The Au/TiO x /TiO y /Au RRAM device operated under~1.5 V with~10 2 ON/OFF ratio, which also exhibited artificial synaptic characteristics such as long-term potentiation (LTP), long-term depression (LTD), and spike-timing-dependent plasticity (STDP). Mullani et al reported the enhanced RS behavior of their devices based on hydrothermal-fabricated carbon nanotube/TiO 2 nanorods composite film through increasing oxygen vacancy reservoir [4]. The effect of concentration of TiO 2 -fMWCNT (functionalized multiwalled carbon nanotube) nanocomposites was confirmed, which improved the RS performance of the device with forming-free and low operational voltage when the concentration of fMWCNT was 0.03 wt %.…”

Section: Thin Film Materials Of Rs Mediummentioning

confidence: 96%

“…The performances of thin-film-material-based RS layers have a decisive influence on the performance of RRAM devices, which indicates that the fabrication methods of RS layers or synthesis technologies of thin film materials cannot be neglected [1][2][3][4][5][6]. Currently, several main fabrication technologies for RS layers have received extensive recognition by researchers, such as atomic layer deposition (ALD), magnetron sputtering, chemical vapor deposition (CVD) and solution-processed deposition.…”

Section: Biological (Silk Protein) Polymer (Pvk) Perovskite (Ch3nh3snmentioning

confidence: 99%

“…The unipolar switching mode is defined by the amplitude of the applied voltage bias while bipolar switching depends on the polarity of the applied voltage bias. In addition, as one of NVM devices, the endurance and retention properties of RRAM are also the presence of device reliability [4][5][6][7][28][29][30].…”

Section: Biological (Silk Protein) Polymer (Pvk) Perovskite (Ch3nh3snmentioning

confidence: 99%

“…According to the theory proposed by Hebbian in 1949 [148], the connection between the two next neurons can be strengthened when they receive stimulation signals, which will result in the potentiation and depression during the neuron activities. For instance, long-term potentiation is Massive neurons form neural circuits through synapses in neural networks of the human brain [1][2][3][4][5][6]. These neural circuits are the foundation of advanced neural activities such as learning and memorizing, which are attributed to the plasticity of neural networks [2][3][4].…”

Section: Bionic Synaptic Applicationmentioning

confidence: 99%

“…In the trend of miniaturization of electronic equipment, the demand for memory devices with small size, low voltage, low power consumption, and superior performance has been under extensive consideration. Currently, silicon-based flash memory, which dominates the market of data storage devices, has been difficult in meeting the needs of future development of data storage devices due to its physical and technological limitations, such as high operation voltage, high power consumption and low retention capacity [3][4][5][6]. As one of the emerging technologies of NVM, resistive random access memory (RRAM) device has been given attention as one of the next-generation memory devices.…”

Section: Introductionmentioning

confidence: 99%

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Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

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Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generation alternatives to traditional memory. In this review, an overview of RRAM devices is demonstrated in terms of thin film materials investigation on electrode and function layer, switching mechanisms and artificial intelligence applications. Compared with the well-developed application of inorganic thin film materials (oxides, solid electrolyte and two-dimensional (2D) materials) in RRAM devices, organic thin film materials (biological and polymer materials) application is considered to be the candidate with significant potential. The performance of RRAM devices is closely related to the investigation of switching mechanisms in this review, including thermal-chemical mechanism (TCM), valance change mechanism (VCM) and electrochemical metallization (ECM). Finally, the bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short-term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity (STDP) reveal the great potential of RRAM devices in the field of neuromorphic application.

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Section: Thin Film Materials Of Rs Mediummentioning

confidence: 96%

Section: Biological (Silk Protein) Polymer (Pvk) Perovskite (Ch3nh3snmentioning

confidence: 99%

Section: Biological (Silk Protein) Polymer (Pvk) Perovskite (Ch3nh3snmentioning

confidence: 99%

Section: Bionic Synaptic Applicationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

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Light‐Assisted Resistive Switching Memory Device with Reduced SET/RESET Voltage Using Sol–Gel TiO₂ on Al‐Doped ZnO Electrode

Ghosh

Basak

2021

Physica Status Solidi (a)

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Herein, light‐assisted resistive switching (RS) characteristic of low‐cost sol–gel TiO2 film‐based metal–insulator–metal (MIM) configuration using Al‐doped ZnO (AZO) as the bottom electrode is demonstrated. Unprecedentedly, instead of the costly transparent conducting electrode such as tin‐doped indium oxide, AZO electrode is exploited in this study due to its dual role as a transparent and an additional oxygen vacancy (VO)‐rich electrode. The Al/TiO2/AZO device shows electroforming free bipolar RS characteristics, which can be explained by the formation (rupture) of conducting filaments composed of VO. The memory window is increased three times under the blue light illumination compared to dark conditions. Interestingly, the SET and RESET voltages are decreased from 5.2 to 4.5 V and −3.9 to −3.3 V, respectively, under the blue light illumination with respect to the dark condition. The enhancement in the RS effect under the blue light illumination is explained in terms of the photoresponsive properties of TiO2. The MIM device exhibits good switching repeatability with stable retention characteristics, making them attractive for next‐generation nonvolatile resistive random access memory devices.

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The Structural, Electronic, and Optical Characteristics of Sb_2−xM_xO₃ (M = Cu, Ni, Zn; x = 0.25) for Optoelectronic and Allied Applications: First‐Principles Study

Khera

Hussain

Khalil

2023

Physica Status Solidi (b)

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Herein, structural, electronic, and optical characteristics of pristine Sb 2 O 3 and doped Sb 2Àx M x O 3 (M = Cu, Ni, Zn; x = 0.25) for optoelectronic and allied applications are computed using Tran-Blaha modified Becke-Johnson (TB-mBJ) approximation along with Hubbard correction. The calculated negative groundstate energy values and absence of imaginary frequency at Gamma (ΓÞpoint predict the dynamical and structural stability of all studied composites. The spinpolarized electronic band structure, density of states (DOS), and 3D iso-surface charge density analysis show reduced energy bandgap values for Sb 2Àx M x O 3 with dopant at site B. In addition, Sb 2Àx Ni x O 3 is found with minimal energy bandgap along spin-down configuration. As regards optical response of composites, Sb 2Àx Ni x O 3 offers maximum electromagnetic absorption in UV region and highest optical conductivity. Henceforth, Sb 2Àx Ni x O 3 is found as most promising candidate among all studied composites for optoelectronic and allied applications.

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Improved resistive switching behavior of multiwalled carbon nanotube/TiO2 nanorods composite film by increased oxygen vacancy reservoir

Cited by 25 publications

References 33 publications

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Light‐Assisted Resistive Switching Memory Device with Reduced SET/RESET Voltage Using Sol–Gel TiO₂ on Al‐Doped ZnO Electrode

The Structural, Electronic, and Optical Characteristics of Sb_2−xM_xO₃ (M = Cu, Ni, Zn; x = 0.25) for Optoelectronic and Allied Applications: First‐Principles Study

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Improved resistive switching behavior of multiwalled carbon nanotube/TiO2 nanorods composite film by increased oxygen vacancy reservoir

Cited by 25 publications

References 33 publications

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Light‐Assisted Resistive Switching Memory Device with Reduced SET/RESET Voltage Using Sol–Gel TiO2 on Al‐Doped ZnO Electrode

The Structural, Electronic, and Optical Characteristics of Sb2−xMxO3 (M = Cu, Ni, Zn; x = 0.25) for Optoelectronic and Allied Applications: First‐Principles Study

Contact Info

Product

Resources

About

Light‐Assisted Resistive Switching Memory Device with Reduced SET/RESET Voltage Using Sol–Gel TiO₂ on Al‐Doped ZnO Electrode

The Structural, Electronic, and Optical Characteristics of Sb_2−xM_xO₃ (M = Cu, Ni, Zn; x = 0.25) for Optoelectronic and Allied Applications: First‐Principles Study