Improved quality GaN by growth on compliant silicon-on-insulator substrates using metalorganic chemical vapor deposition

Cao, Jianxing; Pavlidis, D.; Park, Y.; Singh, Jasprit; Eisenbach, A.

doi:10.1063/1.366613

Cited by 76 publications

(37 citation statements)

References 18 publications

(11 reference statements)

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“…MOVPE growth of GaN on such substrates resulted in high-quality material (corrected FWHM of the (0002) rocking curve of $360 arcsec) which is comparable to GaN grown on 6H-SiC substrates. Cao et al [49,50] obtained GaN layers with a full width at half maximum of the GaN(0002) Bragg reflection of 366 arcsec by MOVPE using compliant Si(100) substrates. Here best results were obtained when the Si surface was nitridated at 1040 C prior to the GaN buffer growth at 500 C and bulk growth at 940 C. Scanning electron microscopy revealed a rather rough surface showing hexagonal hillocks probably due to the growth on the amorphous silicon nitride interfacial layer caused by the nitridation process.…”

Section: Introductionmentioning

confidence: 99%

GaN-Based Devices on Si

Krost¹,

Dadgar²

2002

phys. stat. sol. (a)

181

111

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Nowadays, GaN‐based devices are usually grown on sapphire or silicon‐carbide substrates. These are either insulating or very expensive and not available in large diameter. A well‐conducting low‐cost alternative is silicon also enabling the integration of optoelectronics or high‐power electronics with Si‐based electronics. The main problem limiting a fast progress of GaN growth on silicon is the thermal mismatch of GaN and Si leading to cracks even below device‐relevant layer thicknesses. In the last few years, since the first demonstration of a molecular beam epitaxy grown GaN‐based light emitting diode on Si in 1998 the activities in research of GaN on Si increased dramatically. Meanwhile, several concepts to lower stress, avoid cracks, and improve the material quality exist. Meanwhile the material quality has improved significantly and is about as good as on sapphire so that it is only a question of time until GaN‐based devices on Si come into market. This article gives a review on the latest developments in group‐III nitride growth on Si by metal organic vapor phase epitaxy.

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Section: Introductionmentioning

confidence: 99%

GaN-Based Devices on Si

Krost¹,

Dadgar²

2002

phys. stat. sol. (a)

181

111

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“…The peak position of InGaN on the PCS was slightly shifted toward the GaN peak compared with that grown on the reference substrate. This shift can be explained by strain sharing between the InGaN layer and the GaN membrane [26,27]. The InGaN epilayer grown on the CS exhibited a smaller lattice mismatch along c-axis than did that grown on the reference substrate.…”

Section: Resultsmentioning

confidence: 87%

“…The in-plane strain of the GaN/InGaN system can be relieved by sharing the strain in the InGaN layer e f , with that in the GaN layers e s . The strain in these two layers is modified according to [26,27] …”

Section: Resultsmentioning

confidence: 99%

Optical study of phase-separated thick InGaN layers grown on a compliant substrate

et al. 2015

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The optical properties of thick InGaN layers grown on a compliant substrate (CS) were investigated. The CS was fabricated by thermal deformation of nanoporous GaN during high-temperature annealing. The strain sharing between the InGaN with CS was characterized using high-resolution X-ray diffraction, and we found a reduced in-plane strain of the InGaN on the CS. Photoluminescence (PL) spectra exhibited double peaks associated with discontinuous strain relaxation during the growth of the InGaN films. The strain sharing suppressed defect formation in the InGaN grown on CS, whereas the degree of indium fluctuation was similar because the phase separation resulted from spinodal decomposition. The temperature dependence of the PL spectra and internal quantum efficiency were analyzed as a function of the thickness of the InGaN layer. The effects of the CS on the growth of thick InGaN layers are discussed.

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“…11,12 The thickness of the silicon on insulator (SOI) layer has been reduced to the nanometer regime and successfully used as compliant substrate for GaN and SiGe epitaxy. [13][14][15] In the case of SiGe, the SiO 2 is expected to be rigid at the growth temperature range necessary for SiGe epitaxy (typically between 450°C and 700°C). The inability of the SOI layer to deform at these substrate temperatures limits the possibility of the Si layer to share the misfit strain during epitaxy.…”

Section: Introductionmentioning

confidence: 99%