“…While the model presented here can predict general PV performance requirements for high STC 2+ , it is inadequate for predicting specific semiconductor properties to achieve a set performance level because of the simplicity of the semiconductor physics. Other factors, such as dry- vs wet-side illumination, semiconductor doping concentration, band bending, interfacial barrier heights, and surface defects, are neglected but will ultimately influence PV performance. ,,− , We also do not address the form of the Cu catalyst, i.e., whether it is a thin film or nanoparticles, recognizing that these factors also impact PEC performance by altering the electrochemically active surface area, kinetics, fraction of reflected light, and the Schottky barrier height. ,, Incorporating such factors is outside the scope of this current study, which is to provide general performance guidelines for achieving high STC 2+ rates. Moreover, their impact on PEC performance is implicitly seen when altering illumination intensity, series resistance, and shunt resistance because they principally modify the photocurrent, photovoltage, and fill factor (Figure S1).…”