Improved pH reliability of solution-processed In&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; field-effect transistors via Ga doping and different annealing temperatures

Park, JoonHui; Hong, J.-W.; Kim, Kyung Hwan; Rim, You Seung

doi:10.36463/idw.2019.0567

Proceedings of the International Display Workshops

2019

DOI: 10.36463/idw.2019.0567

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Improved pH reliability of solution-processed In<sub>2</sub>O<sub>3</sub> field-effect transistors via Ga doping and different annealing temperatures

JoonHui Park¹,

J.-W. Hong²,

Kyung Hwan Kim³

et al.

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Improved pH reliability of solution-processed In<sub>2</sub>O<sub>3</sub> field-effect transistors via Ga doping and different annealing temperatures

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