Improved performance of quantum dot light-emitting diodes by introducing WO<sub>3</sub> hole injection layers

Kim, Hyun Soo; Lee, Dohyeong; Kim, Bada; Hwang, BoRam; Kim, Chang Kyo

doi:10.1080/15421406.2021.1972228

Cited by 4 publications

(1 citation statement)

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“…In addition, due to the nature of organic materials, the PEDOT:PSS has a lower thermal stability than inorganic materials. Transition metal oxides such as molybdenum oxide (MoO 3 ) [ 26 , 27 , 28 ], nickel oxide (NiO) [ 29 , 30 , 31 ], tungsten oxide (WO 3 ) [ 32 , 33 , 34 ], and vanadium oxide (V 2 O 5 ) [ 35 , 36 , 37 ] have successfully been employed in QLEDs as promising alternatives to replace the organic PEDOT:PSS HIL due to their compatibility with a high work function, good stability, and good carrier mobility. Consequently, transition metal oxides have applications in various devices, including photovoltaics, batteries, and light-emitting diodes.…”

Section: Introductionmentioning

confidence: 99%

Highly Efficient All-Solution-Processed Quantum Dot Light-Emitting Diodes Using MoOx Nanoparticle Hole Injection Layer

et al. 2023

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This paper presents a study that aims to enhance the performance of quantum dot light-emitting didoes (QLEDs) by employing a solution-processed molybdenum oxide (MoOx) nanoparticle (NP) as a hole injection layer (HIL). The study investigates the impact of varying the concentrations of the MoOx NP layer on device characteristics and delves into the underlying mechanisms that contribute to the observed enhancements. Experimental techniques such as an X-ray diffraction and field-emission transmission electron microscopy were employed to confirm the formation of MoOx NPs during the synthesis process. Ultraviolet photoelectron spectroscopy was employed to analyze the electron structure of the QLEDs. Remarkable enhancements in device performance were achieved for the QLED by employing an 8 mg/mL concentration of MoOx nanoparticles. This configuration attains a maximum luminance of 69,240.7 cd/cm2, a maximum current efficiency of 56.0 cd/A, and a maximum external quantum efficiency (EQE) of 13.2%. The obtained results signify notable progress in comparison to those for QLED without HIL, and studies that utilize the widely used poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) HIL. They exhibit a remarkable enhancements of 59.5% and 26.4% in maximum current efficiency, respectively, as well as significant improvements of 42.7% and 20.0% in maximum EQE, respectively. This study opens up new possibilities for the selection of HIL and the fabrication of solution-processed QLEDs, contributing to the potential commercialization of these devices in the future.

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Section: Introductionmentioning

confidence: 99%

Highly Efficient All-Solution-Processed Quantum Dot Light-Emitting Diodes Using MoOx Nanoparticle Hole Injection Layer

et al. 2023

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The Zn1−xMgxO electron transport layer for charge balance in high-brightness inverted quantum-dot light-emitting diodes

Chen,

Zhang,

Kun

et al. 2024

J Mater Sci: Mater Electron

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Study on the Construction and Performance of the Top Electrode in Red-Emitting QLED Top-Emitting Devices

孙

2024

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Improved performance of quantum dot light-emitting diodes by introducing WO₃ hole injection layers

Cited by 4 publications

References 22 publications

Highly Efficient All-Solution-Processed Quantum Dot Light-Emitting Diodes Using MoOx Nanoparticle Hole Injection Layer

Highly Efficient All-Solution-Processed Quantum Dot Light-Emitting Diodes Using MoOx Nanoparticle Hole Injection Layer

The Zn1−xMgxO electron transport layer for charge balance in high-brightness inverted quantum-dot light-emitting diodes

Study on the Construction and Performance of the Top Electrode in Red-Emitting QLED Top-Emitting Devices

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Improved performance of quantum dot light-emitting diodes by introducing WO3 hole injection layers

Cited by 4 publications

References 22 publications

Highly Efficient All-Solution-Processed Quantum Dot Light-Emitting Diodes Using MoOx Nanoparticle Hole Injection Layer

Highly Efficient All-Solution-Processed Quantum Dot Light-Emitting Diodes Using MoOx Nanoparticle Hole Injection Layer

The Zn1−xMgxO electron transport layer for charge balance in high-brightness inverted quantum-dot light-emitting diodes

Study on the Construction and Performance of the Top Electrode in Red-Emitting QLED Top-Emitting Devices

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Improved performance of quantum dot light-emitting diodes by introducing WO₃ hole injection layers