Improved performance of nanoscale junctionless tunnel field-effect transistor based on gate engineering approach

Abadi, Rouzbeh Molaei Imen; Ziabari, Seyed Ali Sedigh

doi:10.1007/s00339-016-0530-9

Cited by 18 publications

(5 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The asymmetric structure of the side-gate may be the main causing factor for the high gate current. Referring to the design theory of the gate engineering [21], we suppose that the initial trajectories of emission electrons can be optimized by adjusting the structural parameters. For instance, with a second gate added on the opposite side and tied electrically to the other gate, it would balance out the electric fields so that the gate interception should decrease.…”

Section: Resultsmentioning

confidence: 99%

Study on electrical properties and structure optimization of side-gate nanoscale vacuum channel transistor

Shi

et al. 2020

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

In this paper, a nanoscale vacuum channel transistor (NVCT) with a side-gate structure is fabricated by standard electron beam lithography. The states of the proposed NVCTs could be effectively modulated by side-gate bias, exhibiting a drive current (>400 nA), low work voltage (<20 V) and high on/off current ratio (>103). Moreover, we further optimize the shapes of the electrodes, demonstrating that the electric performance is closely related to the structure parameters. The side-gate NVCT offers an alternative method to fulfill the on-chip vacuum devices with high integration.

show abstract

Section: Resultsmentioning

confidence: 99%

Study on electrical properties and structure optimization of side-gate nanoscale vacuum channel transistor

Shi

et al. 2020

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…In this paper, a novel structure of the dual-material gate and Gaussian-doped source heterostructure junctionless tunnel field-effect transistor (DMG-GDS-HJLTFET) is designed and investigated to enhance the performance of conventional Si-based DMG-HJLTFET [25,26]. Similar to DMG-HJLTFET, a heterostructure which narrows the tunneling barrier width between the source and channel is still adopted, and the charge plasma concept is also used for realizing a corresponding P + -I-N + structure under the assumption of n-channel JLTFETs, where polar gate (PG) uses a larger work function than control gate (CG), and PG located at the left forms the heavily doped P-type source region, while CG located at middle induces an intrinsic channel region.…”

Section: Introductionmentioning

confidence: 99%

Electrical performance of InAs/GaAs_0.1Sb_0.9 heterostructure junctionless TFET with dual-material gate and Gaussian-doped source

Xie

Liu

Chen

et al. 2020

Semicond. Sci. Technol.

View full text Add to dashboard Cite

In this work, we demonstrate the design of a dual-material gate and Gaussian-doped source heterostructure junctionless tunnel field-effect transistor (DMG-GDS-HJLTFET). Unlike the conventional dual-material gate heterostructure junctionless tunnel field-effect transistor (DMG-HJLTFET), the proposed structure uses a Gaussian-doped source and adopts InAs/GaAs 0.1 Sb 0.9 as a heterojunction at the source and channel interface, where a polarization electric field is induced by the lattice mismatch in the InAs and GaAs 0.1 Sb 0.9 Zinc blende crystal. At the same time, the control gate electrode of the proposed structure is divided into two parts, namely tunnel gate (TG) and auxiliary gate (AG). In this structure, TG is located near the source side and has a lower work function, while AG is located near the drain side and has a higher work function, which not only improves ON-state current (Ion) but also decreases the OFF-state current. The performance of the proposed device is analyzed and compared with that of DMG-HJLTFET; simulation results show improvements in Ion, subthreshold swing, transconductance (g m ), cut-off frequency (f T ) and gain bandwidth (GBW). Compared with conventional DMG-HJLTFET, the maximum Ion and g m of the DMG-GDS-HJLTFET are 4.1 × 10 −4 A µm −1 and 1.27 × 10 −3 S µm −1 at 1.2 V gate-to-source voltage (Vgs); further, average subthreshold swing of DMG-GDS-HJLTFET is only 13.6 mV Dec −1 at low drain voltages. Also, DMG-GDS-HJLTFET could obtain a maximum f T of 193 GHz at Vgs = 0.8 V and a maximum GBW of 55.7 GHz at Vgs = 1.12 V, respectively.

show abstract

“…In the present work, we address the tunability of sensing metrics through the optimization of gate work-function and back bias for DM p-TFET. As gate work-function and back bias both govern the extent of tunneling through the sourcechannel junction [18,19], the optimization of their values is critical for enhancing the performance of TFET biosensors. Our results demonstrate that a low value of gate work-function coupled with a back bias (opposite to the polarity of front gate voltage) should be used to enhance the sensing metrics of TFET based biosensor.…”

Section: Introductionmentioning

confidence: 99%

Investigation the impact of the gate work-function and biases on the sensing metrics of TFET based biosensors

Dwivedi

Singh

2020

Eng. Res. Express

View full text Add to dashboard Cite

In this work, we examined the impact of gate work-function and back-gate bias to enhance sensing metrics of a Dielectric Modulated (DM) p-type Tunnel Field Effect Transistor (p-TFET) based biosensor. The sensing metrics, namely Sensitivity (S) and Selectivity (ΔS) are considerably improved by using a lower value of gate work-function and positive back gate voltages. It is shown that by appropriate selection of gate work-function and back gate bias, Band-to-Band Tunneling (BTBT) of carriers is reduced and a significant change in electrical characteristics is observed in a device with an empty cavity. Therefore, the relative change in the drain current due to the presence of biomolecules in the nanogap cavity is maximized. Results indicate a Sensitivity of ∼10 9 for 3-aminopropyltriethoxysilane (APTES) biomolecule, and Selectivity of ∼10 2 for APTES concerning Biotin biomolecule in an optimally designed p-TFET biosensor. The impact of location, as well as the charge of biomolecules, are also analyzed in this work. Results showcase the additional degree of freedom through device optimization which facilitates the tunability of sensing metrics for improved biosensor performance.

show abstract

Improved performance of nanoscale junctionless tunnel field-effect transistor based on gate engineering approach

Cited by 18 publications

References 40 publications

Study on electrical properties and structure optimization of side-gate nanoscale vacuum channel transistor

Study on electrical properties and structure optimization of side-gate nanoscale vacuum channel transistor

Electrical performance of InAs/GaAs_0.1Sb_0.9 heterostructure junctionless TFET with dual-material gate and Gaussian-doped source

Investigation the impact of the gate work-function and biases on the sensing metrics of TFET based biosensors

Contact Info

Product

Resources

About

Improved performance of nanoscale junctionless tunnel field-effect transistor based on gate engineering approach

Cited by 18 publications

References 40 publications

Study on electrical properties and structure optimization of side-gate nanoscale vacuum channel transistor

Study on electrical properties and structure optimization of side-gate nanoscale vacuum channel transistor

Electrical performance of InAs/GaAs0.1Sb0.9 heterostructure junctionless TFET with dual-material gate and Gaussian-doped source

Investigation the impact of the gate work-function and biases on the sensing metrics of TFET based biosensors

Contact Info

Product

Resources

About

Electrical performance of InAs/GaAs_0.1Sb_0.9 heterostructure junctionless TFET with dual-material gate and Gaussian-doped source