Abstract:In 2001, the authors demonstrated performance of GaAs MOS-diodes with nm-thin directly oxidated layers fromed by W & ozone process 111. The thin oxide layers are effective in suppressing gate leakage current. However, a MOSFET based on it has hysteresis in current-voltage curves, and a dip in transconductance at a gate voltage around the flatband voltage 121. H. Ikoma et al. showed good influence of nitridation upon oxidated GaAs surfaces [3]. We also demonstrated in 2002 excellent influences of oxi-nitridatio… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.