Improved performance of kesterite Cu2ZnSn(S,Se)4 thin film solar cells by Ag/Ge co-doping

Tan, Xiaohui; Hu, Jiaming; Zhu, Wuzhi; Wu, Fangfang; Han, Xiuxun

doi:10.1016/j.jallcom.2024.173645

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Journal of Alloys and Compounds

2024

DOI: 10.1016/j.jallcom.2024.173645

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Improved performance of kesterite Cu2ZnSn(S,Se)4 thin film solar cells by Ag/Ge co-doping

Xiaohui Tan,

Jiaming Hu,

Wuzhi Zhu

et al.

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2024

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Cited by 3 publications

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Introducing Bi₂S₃ Interlayer to Synergistically Modify Mo Back Contact and Regulate Bulk Defects in Kesterite Solar Cells

Cui,

Yang,

Bai

et al. 2024

Small

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A suitable interlayer between the Mo back electrode and kesterite absorber layer has been proven to have a positive effect on limiting the bulk defects of the absorber by the constitute diffusion. Here, a thin Bi2S3 layer is used as the back‐interface intermediate layer for the first time, this innovative approach allows for simultaneous modification of the back contact and reduction of bulk defects, resulting in improving the power conversion efficiency of the kesterite device from 9.66% to 11.8%. The evaporated Bi2O3 thin films turn into the Bi2S3 interlayers after sintering the Cu2ZnSnS4 precursor thin films. The Bi2S3 interlayer can inhibit the decomposition reaction of back contact and suppress the formation of the secondary phases. It can also optimize the Fermi level offset and promote the separation of the photoinduced carriers, resulting from its characteristic of high work function. Besides, a small part of the Bi element can diffuse into Cu2ZnSn(S, Se)4 film and induce the crystal growth and restrain Zn‐related defects, which is attributed to forming the low melting‐point liquid BiSex phase during the high‐temperature selenization process. The conclusions highlight the bifunction of the thin Bi2S3 intermediate layer, which can provide a new approach to improve the photoelectric conversion efficiency of kesterite solar cells.

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Introducing Bi₂S₃ Interlayer to Synergistically Modify Mo Back Contact and Regulate Bulk Defects in Kesterite Solar Cells

Cui,

Yang,

Bai

et al. 2024

Small

View full text Add to dashboard Cite

show abstract

Dielectric property exploration in kesterite nanolattice: Insights from Monte Carlo Simulations

Fadil,

Raorane,

Saber

et al. 2024

Physica B: Condensed Matter

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Fabricating Cu2Zn(SnxGe1-x)Se4 thin-film solar cells with back surface Ge grading by magnetron sputtering

Hu,

Yang,

Zhao

et al. 2024

Physica B: Condensed Matter

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Improved performance of kesterite Cu2ZnSn(S,Se)4 thin film solar cells by Ag/Ge co-doping

Cited by 3 publications

References 45 publications

Introducing Bi₂S₃ Interlayer to Synergistically Modify Mo Back Contact and Regulate Bulk Defects in Kesterite Solar Cells

Introducing Bi₂S₃ Interlayer to Synergistically Modify Mo Back Contact and Regulate Bulk Defects in Kesterite Solar Cells

Dielectric property exploration in kesterite nanolattice: Insights from Monte Carlo Simulations

Fabricating Cu2Zn(SnxGe1-x)Se4 thin-film solar cells with back surface Ge grading by magnetron sputtering

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Improved performance of kesterite Cu2ZnSn(S,Se)4 thin film solar cells by Ag/Ge co-doping

Cited by 3 publications

References 45 publications

Introducing Bi2S3 Interlayer to Synergistically Modify Mo Back Contact and Regulate Bulk Defects in Kesterite Solar Cells

Introducing Bi2S3 Interlayer to Synergistically Modify Mo Back Contact and Regulate Bulk Defects in Kesterite Solar Cells

Dielectric property exploration in kesterite nanolattice: Insights from Monte Carlo Simulations

Fabricating Cu2Zn(SnxGe1-x)Se4 thin-film solar cells with back surface Ge grading by magnetron sputtering

Contact Info

Product

Resources

About

Introducing Bi₂S₃ Interlayer to Synergistically Modify Mo Back Contact and Regulate Bulk Defects in Kesterite Solar Cells

Introducing Bi₂S₃ Interlayer to Synergistically Modify Mo Back Contact and Regulate Bulk Defects in Kesterite Solar Cells