Improved performance of GaAs tunnel diode by embedding InAs quantum dot layer for tandem solar cells

Park, Kwang-Wook; Kang, Seok; Ravindran, Sooraj; Min, Jung‐Wook; Lee, Soo Kyung; Park, Min Su; Lee, Yong Tak

doi:10.7567/apex.8.062302

Cited by 3 publications

(3 citation statements)

References 23 publications

(30 reference statements)

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“…The InAs QDs embedded tunnel junction is also able to withstand elevated temperatures which the structure undergoes while growing additional unit cells over the tunnel junction in a multi-junction solar cell [49]. During this overlayer growth, the initially grown tunnel junction gets inevitably heated during the growth of complete solar cell structure.…”

Section: Inas Qd Embedded Tunnel Diode Operation Characteristicsmentioning

confidence: 99%

Growth optimization of InAs/GaAs quantum dots and performance enhancement of a GaAs tunnel diode by embedding quantum dots for solar cell application

Park

Kang

Ravindran

et al. 2015

Semicond. Sci. Technol.

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We report the performance enhancement of a molecular beam epitaxy grown GaAs tunnel diode embedded with InAs quantum dots (QDs) for tandem solar cell application, and characterization of tunnel diodes embedded with InAs QDs grown with different growth parameters. Prior to the growth and fabrication of the tunnel diode, InAs QDs were grown under different growth durations and temperatures. The InAs QD samples grown in a temperature range from 480 to 520 °C for a duration of 32 s showed the highest areal fill fraction by InAs QDs. Tunnel diodes embedded with InAs QDs that were grown at various growth conditions were fabricated and characterized. We found that the tunnel diode embedded with InAs QD grown at 520 °C showed the highest peak tunnel current density among all the samples. The enhanced performance of the InAs QD embedded tunnel diode is attributed to the large areal fill fraction produced by the presence of large InAs QDs having high density, which are formed at sufficiently high growth temperature and long growth duration.

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Section: Inas Qd Embedded Tunnel Diode Operation Characteristicsmentioning

confidence: 99%

Growth optimization of InAs/GaAs quantum dots and performance enhancement of a GaAs tunnel diode by embedding quantum dots for solar cell application

Park

Kang

Ravindran

et al. 2015

Semicond. Sci. Technol.

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“…An alternative or complementary way to this doping approach to improve the TJs electrical performance should be to embed nanostructures at the tunneling interface of the TJs. The inclusion of InAs quantum dots [9] or ErAs nanoparticles [10] has shown promising results to enhance the tunneling current density of GaAs TJs. Similarly, the insertion of quantum wells (QWs) in InAlGaAs TJ on an InP substrate enables us to increase by 45 the J peak compared to the bulk TJ [11].…”

Section: Introductionmentioning

confidence: 99%

Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

Louarn¹,

Claveau²,

Marigo-Lombart³

et al. 2018

J. Phys. D: Appl. Phys.

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In this article, we investigate the impacts of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs Tunnel Junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green's function formalism and a 6-band k.p hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus the simple insertion of staggered band lineup heterostructures enables to reach tunneling current well above the kA/cm 2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potentials for TJ-based components such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.

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“…However, growing such TDs as-designed is difficult due to practical limits of the dopants. [17][18][19] Fortunately, sufficiently high hole concentrations (10 19 -10 20 cm −3 ) with low dopant diffusion across neighboring layers and good surface morphology can be obtained by Be-doped p-GaAs that is grown by the low-temperature molecular beam epitaxy (MBE) technique. 20) Meanwhile, the highest achievable electron concentrations in Si-doped n-GaAs are only 10 18 -10 19 cm −3 .…”

mentioning

confidence: 99%

Detailed analysis and performance limiting mechanism of Si delta-doped GaAs tunnel diode grown by MBE

Kang

Min

et al. 2018

Jpn. J. Appl. Phys.

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High-performance GaAs tunnel diodes (TDs) are fabricated by using Si delta-doping technique. The GaAs TDs exhibited a high peak tunnelcurrent density of 2,735 A/cm 2 and low specific resistivity of 1.46 ' 10 %4 Ω&cm 2 . However, the performance of the GaAs TDs deteriorated once the amount of Si delta doping exceeded a certain limit, which has been rarely reported elsewhere. Detailed analyses and numerical simulations of GaAs TDs with various amounts of Si delta doping prove that Si amphoteric behavior governs the performance limit. GaAs TDs with precisely controlled Si delta doping are suitable for cutting-edge tandem solar cell applications.

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Improved performance of GaAs tunnel diode by embedding InAs quantum dot layer for tandem solar cells

Cited by 3 publications

References 23 publications

Growth optimization of InAs/GaAs quantum dots and performance enhancement of a GaAs tunnel diode by embedding quantum dots for solar cell application

Growth optimization of InAs/GaAs quantum dots and performance enhancement of a GaAs tunnel diode by embedding quantum dots for solar cell application

Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

Detailed analysis and performance limiting mechanism of Si delta-doped GaAs tunnel diode grown by MBE

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