Improved Performance of an InGaN-Based Light-Emitting Diode With a p-GaN/n-GaN Barrier Junction

Liu, Yi-Jung; Huang, Chien-Chang; Chen, Tai-You; Hsu, Chia-Wen; Liou, Jian-Kai; Liu, Wen‐Chau

doi:10.1109/jqe.2011.2114330

Cited by 27 publications

(19 citation statements)

References 23 publications

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“…24 N O 2 (gas) + e − ↔ N O − 2 (ads) [ 8 ] and N O 2 (gas) + e − ↔ N O(gas) + O − (ads) [ 9 ] As mentioned above, these reactions demonstrate that electrons are captured from the conduction band of ZnO. This certainly leads to the decrease (increase) in conductivity (resistance) of ZnO.…”

Section: Resultsmentioning

confidence: 78%

On an Integrated Gas Sensing System Based on an AlGaN/GaN Heterostructure Compound Semiconductor

Hsu

Lin

Liu

2013

J. Electrochem. Soc.

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An interesting integrated gas sensing system, based on an AlGaN/GaN heterostructure compound semiconductor is developed and investigated. This gas detecting system consists of triple gas sensors and a gas sensing readout circuitry. Good gas sensing responses with remarkable current variations of 5.56 mA (@1000 ppm H 2 /air), 19.06 μA (@1000 ppm NH 3 /air), and 0.82 mA (@100 ppm NO 2 /air) are obtained at 200 • C, respectively. The corresponding transient states are also demonstrated in this work. From the employed detecting readout system, the gas concentrations of introduced gases (H 2 , NH 3 , and NO 2 ) could be appropriately determined and identified. In addition, a novel gray polynomial differential model (GPDM) is employed to effectively reduce redundant gas sensing data and decrease the data transmission load. From experimental results, the studied integrated gas detecting system shows advantages of multiple gas detection capability, easy operation, low cost, and high portability. Therefore, this gas sensing system shows the promise for high-performance multiple gas detecting applications.

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Section: Resultsmentioning

confidence: 78%

On an Integrated Gas Sensing System Based on an AlGaN/GaN Heterostructure Compound Semiconductor

Hsu

Lin

Liu

2013

J. Electrochem. Soc.

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“…where Ø B is the overall barrier height within the LED device, and n is the ideality factor for the diodes [40,41]. Ø B is calculated to be 1.10V for Reference LED without ITO and 1.31V for PNPNP-GaN LED without ITO, respectively.…”

Section: Resultsmentioning

confidence: 99%

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

Zhang¹,

Tan²,

Liu³

et al. 2013

Opt. Express

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This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in electric field in the PNPNP-GaN junctions, and the ionized donors in these n-GaN layers serve as the hole spreaders. As a result, the electrical performance of the proposed device is improved and the optical output power and EQE are enhanced. Tansu, "Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime," IET Optoelectron. 3(6), 283-295 (2009

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“…4. Based on the I -V characteristic, the series resistance (R s ) can be estimated by the following equation [18]:…”

Section: A Forward Voltage Versus Currentmentioning

confidence: 99%

Effects of Die-Attach Material and Ambient Temperature on Properties of High-Power COB Blue LED Module

Yafei

Mei

et al. 2015

IEEE Trans. Electron Devices

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With the increasing demand of high-power light-emitting diode (LED), multichip modules have made great progress. A die-attach layer as the first-level packaging has a most significant impact on the thermal performance of a power module. In this paper, we introduce a novel die-attach material, nanosilver paste, which can be used for connecting multichips on the substrate. This nanosilver paste has a higher melting temperature and thermal/electrical conductivity than the conventional Sn3Ag0.5Cu solders and silver epoxy films. In addition, Al 2 O 3 ceramic substrates were used to form a high-power LED chip-on-board architecture because of their high thermal conductivity and low coefficient of thermal expansion. Recently, because of their ability to emit high brightness, LED packages are being exploited for the automotive, aircraft, space exploration, nuclear industries, and in most cases are exposed to harsh environments. Therefore, the performance and stability of LED packages will be the key to assuring the reliability of LED modules. In this paper, the properties of the LED modules bonded separately with nanosilver, Sn3Ag0.5Cu, and silver epoxy and operating under various ambient temperatures from 27°C to 100°C were determined. The test results showed that the nanosilver paste is a very promising die-attach material for high-power multichip modules packaging.Index Terms-Ceramic substrate, chip-on-board (COB) packaging, high-power LED, high-temperature reliability, nanosilver paste, silver epoxy films, Sn3Ag0.5Cu solders.

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Improved Performance of an InGaN-Based Light-Emitting Diode With a p-GaN/n-GaN Barrier Junction

Cited by 27 publications

References 23 publications

On an Integrated Gas Sensing System Based on an AlGaN/GaN Heterostructure Compound Semiconductor

On an Integrated Gas Sensing System Based on an AlGaN/GaN Heterostructure Compound Semiconductor

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

Effects of Die-Attach Material and Ambient Temperature on Properties of High-Power COB Blue LED Module

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