Improved performance of amorphous silicon thin film transistors by cyanide treatment

Aiyer, Hemantkumar N.; Nishioka, Daikichi; Matsuki, Nobuyuki; Shinno, Hiroyuki; Perera, V.P.S.; Chikyow, Toyohiro; Kobayashi, Hikaru; Koinuma, Hideomi

doi:10.1063/1.1344230

Cited by 5 publications

(2 citation statements)

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“…We have been attempting to improve the performance of a-Si:H solar cells from two different points of view: one is to reduce defects in intrinsic a-Si:H with cyanide (CN), rather than hydrogen termination of Si dangling bonds, and the other is the elimination of impurity doping in the window side p or n layer. The former approach turned out to be effective for improving the performance of a a-Si:H thin-film transistor due primarily to the stabilization of the a-Si:H/a-SiN:H heterointerface [15], but has not yet been verified reproducibly in the stabilization of intrinsic a-Si:H. In the latter approach, we proposed the use of a window layer in which the carrier could be induced by the field effect instead of impurity doping. The possibility was reinforced by the two-dimensional device simulation called a 'field-effect a-Si:H solar cell' (FESC) [16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Concept and performance of a field-effect amorphous silicon solar cell

Matsuki

Abiko

Miyazaki

et al. 2003

Semicond. Sci. Technol.

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We propose a novel solar cell structure based on the concept of forming p or n window layers by the field effect instead of impurity doping, and we verify its performance experimentally. The device, a field-effect amorphous silicon solar cell (FESC), was designed with the aid of a device simulator and fabricated by a plasma chemical vapour deposition system. We have verified that the output current of the FESC was amplified by the field-effect bias application to the gate electrode. The fundamental properties of this new type of amorphous silicon solar cell are demonstrated for the first time.

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Section: Introductionmentioning

confidence: 99%

Concept and performance of a field-effect amorphous silicon solar cell

Matsuki

Abiko

Miyazaki

et al. 2003

Semicond. Sci. Technol.

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“…In this regard, several back-channel modification procedures for attenuating the detrimental influence on the device performance and improving operation characteristics such as "On/Off ratio [2][3][4][5].…”

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Device characteristics of back channel‐modified organic thin‐film transistors

Hoshino

Suemori

Yoshida

et al. 2008

Phys. Status Solidi (c)

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Influence of back‐channel electronic state on device characteristics was investigated for pentacene‐based thin‐film transistors (TFTs), where top surface of the semiconductor layer was covered with an LiF thin film. We observed higher field‐effect hole mobility in the TFTs with the LiF‐covered back channel than in the corresponding uncovered counterparts. In addition, the LiF‐covered TFTs exhibited a decrease in turn‐on voltages and an increase in off‐state current depending on the thickness of the LiF layer and top‐ or bottom‐contact configuration of the source and drain electrodes. We attributed the electronic effect brought about by the LiF coating to a downward band bending in the back channel originating from a rearrangement of the electronic energy‐level alignment at the pentacene/LiF interface. The difference in the device characteristics from those of the uncovered TFTs was successfully explained by such electronic processes in the pentacene layer induced by the downward band bending in the back channel as a pseudo ‐back gate effect and generation of offsetting holes against the surface electronegativity. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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